tesi R. Miscioscia.pdf - EleA@UniSA

Chapter 2 59
figure 28: Pentacene based OTFT transcharacteristics changing the titanium oxide nanoparticles in
the dielectric polymeric matrix [29].
2.6.2 Self-assembled dielectrics
Self-assembled (SA) films can be used to realize an extremely
thin (2 to 6nm) and virtually free of defects gate insulator obtaining, at
the same time, dielectric strength of the order of tens of MV/cm as
shown in the table of figure 29.
figure 29: evolution in the state of the art for the self assembled dielectrics [30].
Among the characteristics of the SA dielectrics, there is of
course the possibility to obtain high gate capacitance, but also the
advantage of being able to be realized by means of solution process,
therefore with low complexity and cost (dipping, spin coating, IJP,
etc.). For these and other reasons, they have attracted, over the years,
great interest in the scientific community reaching quite encouraging
results. For example, in the case of pentacene transistors, at this point