tesi R. Miscioscia.pdf - EleA@UniSA

Chapter 2 79
The research on the OE field has to face all these challenges,
and more other ones, so that this new technology can assert itself and
become competitive covering the market sectors left still partially
unexplored by the inorganic electronic technology.
Relying on the literature information reported in the State of
the Art of the present doctoral thesis and on the just exposed
Conclusions, future technological guidelines have to be defined for the
development of this research activity.
The guidelines are defined setting the target of integrating
organic and/or polymeric and inorganic commercial materials in
optimized structures in terms of electrical performances and
fabrication processing.
In particular, the topological factor is a fundamental
component of the future organic transistor development: as disclosed,
bottom-gate (BG) architectures are particularly advisable for
optimizing the channel-semiconductor interface. Moreover, at the aim
of obtaining the highest profit from the patterning techniques
developed in inorganic electronic and from emerging, not
conventional methods, structures with source and drain contacts
placed under the channel will be realized for reducing the issues
related to gate-overlap, loss currents and parasitic effects due to the
diffusion of the vapour-phase deposited metals towards organic
polycrystalline or amorphous semiconductor.
In conclusion, the BGBC architecture appears particularly
suitable for the future improvements of the presented activity. The
drawback for using of this structure lies in the formation of interfacial
dipoles between source/drain and channel thus increasing the contact
resistance, producing potential barriers and reducing the device
saturation current. At this aim, new processes will be experimented to
optimize the contact-semiconductor interface putting down
undesirable phenomena (injection barrier and parasitic resistances).
As the choice of commercial materials to be employed in
OTFT is wide and the electrical performances in static and dynamic
regimes are often correlated to technological factors, such as
processing, architectural and interface physics factors, the future
research will consist in using of available materials and in optimizing
the structure through the study and the modeling.