tesi R. Miscioscia.pdf - EleA@UniSA

54 State of the Art
As figure 20 shows, CeO2 is characterized by high gate
leakage currents as also figure 20 and figure 21 show which can be
partly reduced by performing a further passivation by depositing a
SiO2 film on the top of the Cerium Oxide film.
More generally, it is given in the literature a more complete
picture of the performance of inorganic dielectrics used in OTFT (for
convenience we quote the chart in figure 22).
figure 21: gate leakages plots in [35]. The add of the SiO2 layer reduces static gate leakages by two
orders of magnitude.