tesi R. Miscioscia.pdf - EleA@UniSA

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140 Exceptions in morphology-mobility relationship revealed differences of maximum mobility trends versus EMN between polymer dielectric-based OTFTs and PFTEOS:TEOS-based OTFTs. The differences in dielectric/OSC interface have shown to be correlated to the isokinetic temperature and activation energy and then to the disorder parameter σ of the DOS in the HOMO band tail. Thus, instead of considering the contribution of band density of states, the amplitude of the distribution of energetic states has been exploited in the investigation of surface properties and dielectric-specific features remarked. The activation energy analysis shows a trend inversion in the TMN/mobility relationship between PMMA samples and PFTEOS:TEOS samples revealing an effect induced by the very nature of insulator rather than the OSC/dielectric interface on thermally activated processes. The dielectric is then responsible of a wide range of thermal behaviours in the thermal response of disordered OSC used in OTFTs. Given the original use of PFTEOS:TEOS in organic electronics applications and more in detail in OTFTs, once we considered the anomalies that it has shown respect polymer dielectric-based transistors in terms of energetic order/disorder effects on pentacene channels, further investigations have to be done on this class of materials in OE together with non-conventional gate/channel interface materials. In this line of work, thermal analyses have proven to be a key discriminant factor to address non-conventional dielectrics surfacefeatures characterizations in electronic devices.
Chapter 4 141 References [1] O. D. Jurchescu, M. Popinciuc, B. J. Wees, and T. T. M. Palstra, Adv. Mater. Weinheim, Ger. 19, 688, 2007. [2] A. Facchetti, M. H. Yoon, and T. J. Marks, Adv. Mater. Weinheim, Ger.17, 1705, 2005. [3] G. Horowitz, M. E. Hajlaoui, Adv. Mater. 12, 1046, 2000 [4] G. Horowitz, J. Mater. Res. 19, 1946, 2004 [5] S. J. Kang, M. Noh, D. S. Park, H. J. Kim, C. N. Whang, C. H. Chang, J. Appl. Phys. 95, 2293, 2004 [6] D. Knipp, R. A. Street, A. Volkel, J. Ho, J. Appl. Phys. 93, 347, 2003 [7] M. Shtein, J. Mapel, J. Benziger, Appl. Phys. Lett. 81, 268, 2002 [8] C. S Kim, S. J. Jo, J.B. Kim, S. Y. Ryu, J. H. Noh, H. K. Baik, Appl. Phys. Lett. 91, 063503, 2007 [9] S. Y. Yang, K. Shin, C. E. Park, “The Effect of Gate-Dielectric Surface Energy on Pentacene Morphology and Organic Field- Effect Transistor Characteristics”, Adv. Funct. Mater. 2005, 15, 1806-1814. [10] Hsiao-Wen Zan, Cheng-Wei Chou, “Effect of Surface Energy on Pentacene Thin-Film Growth and Organic Thin Film Transistor Characteristics”, Jpn. J. Appl. Phys. 48 (2009) 031501 [11] F. De Angelis, L. Mariucci, S. Cipolloni, G. Fortunato, “Analysis of electrical characteristics of high performance pentacene thin-film transistors with PMMA buffer layer” Journal of Non-Crystalline Solids 352 (2006) 1765–1768 [12] F. De Angelis, T. Toccoli, A. Pallaoro, N. Coppede`, L. Mariucci, G. Fortunato, S. Iannotta, Synth. Met. 146 (2004) 291. [13] F. De Angelis, S. Cipolloni, L. Mariucci, G. Fortunato, Appl. Phys. Lett. 86 (2005) 203505.8 [14] M.C. Kwan, K.H. Cheng, P.T. Lai, C.M. Che, “Improved carrier mobility for pentacene TFT by NH3 annealing of gate dielectric”, Solid-State Electronics 51 (2007) 77–80 [15] So Yeon Kim, Taek Ahn, Seungmoon Pyo, Mihye Yi, “Surface modified polymeric gate insulators for pentacene
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Università degli Studi di Salerno
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Acknowledgments It is a pleasure to
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In loving memory of my uncle, Profe
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Introduction Nowadays, it has becom
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Introduction 3 The drawbacks of org
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Introduction 5 Artificial Skin (OTF
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Introduction 7 structure has been d
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Chapter 1 Working principles An Org
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Chapter 1 11 1.1 A model for DC beh
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Chapter 1 13 hp. 4) Decoupling betw
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Chapter 1 15 figure 2: integration
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Chapter 1 17 eq. 11 − = Then, bei
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Chapter 1 19 The formula in eq. 18
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Chapter 1 21 and behaves as a resis
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Chapter 1 23 eq. 22 I DS = μ C ins
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Chapter 1 25 In eq. 27, kB is the B
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Chapter 1 27 eq. 30 · Thu
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Chapter 2 A survey on the state of
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Chapter 2 31 emphasizing the role p
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Chapter 2 33 Only after those years
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Chapter 2 35 In fact, usually the m
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Chapter 2 37 Examples of top-gate b
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Chapter 2 39 deposition process of
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Chapter 2 41 region is patterned by
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Chapter 2 43 figure 11: Non-Relief-
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Chapter 2 45 factor analysing, in p
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Chapter 2 47 In literature results,
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Chapter 2 49 It is clear that the c
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Chapter 2 51 In figure 17 the impro
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Chapter 2 53 figure 19: OFET trans-
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Chapter 2 55 figure 22: Comparison
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Chapter 2 57 channel and gate in Pe
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Chapter 2 59 figure 28: Pentacene b
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Chapter 2 61 figure 31: OTFT realiz
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Chapter 2 63 materials, the higher
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Chapter 2 65 The effect of the barr
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Chapter 2 67 figure 36: potential p
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Chapter 2 69 From table 2, it is ea
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Chapter 2 71 thermal-budget treatme
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Chapter 2 73 in particular in OLEDs
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Chapter 2 75 One interesting charac
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Chapter 2 77 figure 48: electrical
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Chapter 2 79 The research on the OE
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Chapter 2 81 photolysis). In this p
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Chapter 2 83 [26] Facchetti, Wasiel
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Chapter 3 Gate-leakages in polymeri
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Gate-leakages 87 determined by XRD
Page 95 and 96: Gate-leakages 89 The results are:
Page 97 and 98: Gate-leakages 91 It has to be consi
Page 99 and 100: Gate-leakages 93 figure 8: Output c
Page 101 and 102: Gate-leakages 95 figure 12: electri
Page 103 and 104: Gate-leakages 97 3.4 Advanced circu
Page 105 and 106: Gate-leakages 99 figure 16: SEM ima
Page 107 and 108: Gate-leakages 101 modeled with a co
Page 109 and 110: Gate-leakages 103 eq. 11 • Shadow
Page 111 and 112: Gate-leakages 105 References [1] R.
Page 113 and 114: Chapter 4 Morphology-mobility relat
Page 115 and 116: Chapter 4 109 insulators to increas
Page 117 and 118: Chapter 4 111 3.2 General device st
Page 119 and 120: Chapter 4 113 Pentacene islands are
Page 121 and 122: Chapter 4 115 For the preparation o
Page 123 and 124: Chapter 4 117 figure 3: PFTEOS:TEOS
Page 125 and 126: Chapter Chapter 4 4 119 (a): (a):
Page 127 and 128: Chapter 4 121 3.4 Device’s charac
Page 129 and 130: Chapter 4 123 mobility with the dim
Page 131 and 132: Chapter 4 125 As it can be observed
Page 133 and 134: Chapter 4 127 eq. 4 Where r
Page 135 and 136: Chapter 4 129 3.4.3 Thermal charact
Page 137 and 138: Chapter 4 131 Ea(eV) 0.50 0.45 0.40
Page 139 and 140: Chapter 4 133 I D (A) 100.0n 80.0n
Page 141 and 142: Chapter 4 135 μ (cm 2 V -1 s -1 )
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Page 149 and 150: Chapter 4 143 [26] P. Palestri, D.
Page 151 and 152: Conclusions In this PhD dissertatio
Page 153 and 154: Introduction 147 characterizing mor
Page 155 and 156: Table of acronyms and symbols Symbo
Page 157: Table of acronyms and symbols _____
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