tesi R. Miscioscia.pdf - EleA@UniSA

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148 Conclusions
Table of acronyms and symbols Symbol Description units AC Alternate Current a-Si Amorphous silicon BGBC Bottom-Gate/ Bottom-Contacts BGTC Bottom-Gate/Top-Contacts C/V Capacitance/Voltage measurements Cins Gate Specific Capacitance F/cm 2 Da, u Mass Atomic Unit DC Direct Current DI DeIonized (water) DUV Deep-UV radiation E Electric field (its components have the subscript – i.e.: E x ) V/cm Ea, EA Activation Energy eV EG Semiconductor’s Bandgap (EC-EV) eV FET Field-Effect Transistor GCA Gradual Channel Approximation HMDS Hexamethyldisilazane
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Università degli Studi di Salerno
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Acknowledgments It is a pleasure to
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In loving memory of my uncle, Profe
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Introduction Nowadays, it has becom
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Introduction 3 The drawbacks of org
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Introduction 5 Artificial Skin (OTF
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Introduction 7 structure has been d
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Chapter 1 Working principles An Org
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Chapter 1 11 1.1 A model for DC beh
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Chapter 1 13 hp. 4) Decoupling betw
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Chapter 1 15 figure 2: integration
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Chapter 1 17 eq. 11 − = Then, bei
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Chapter 1 19 The formula in eq. 18
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Chapter 1 21 and behaves as a resis
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Chapter 1 23 eq. 22 I DS = μ C ins
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Chapter 1 25 In eq. 27, kB is the B
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Chapter 1 27 eq. 30 · Thu
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Chapter 2 A survey on the state of
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Chapter 2 31 emphasizing the role p
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Chapter 2 33 Only after those years
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Chapter 2 35 In fact, usually the m
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Chapter 2 37 Examples of top-gate b
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Chapter 2 39 deposition process of
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Chapter 2 41 region is patterned by
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Chapter 2 43 figure 11: Non-Relief-
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Chapter 2 45 factor analysing, in p
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Chapter 2 47 In literature results,
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Chapter 2 49 It is clear that the c
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Chapter 2 51 In figure 17 the impro
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Chapter 2 53 figure 19: OFET trans-
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Chapter 2 55 figure 22: Comparison
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Chapter 2 57 channel and gate in Pe
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Chapter 2 59 figure 28: Pentacene b
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Chapter 2 61 figure 31: OTFT realiz
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Chapter 2 63 materials, the higher
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Chapter 2 65 The effect of the barr
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Chapter 2 67 figure 36: potential p
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Chapter 2 69 From table 2, it is ea
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Chapter 2 71 thermal-budget treatme
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Chapter 2 73 in particular in OLEDs
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Chapter 2 75 One interesting charac
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Chapter 2 77 figure 48: electrical
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Chapter 2 79 The research on the OE
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Chapter 2 81 photolysis). In this p
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Chapter 2 83 [26] Facchetti, Wasiel
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Chapter 3 Gate-leakages in polymeri
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Gate-leakages 87 determined by XRD
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Gate-leakages 89 The results are:
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Gate-leakages 91 It has to be consi
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Gate-leakages 93 figure 8: Output c
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Gate-leakages 95 figure 12: electri
Page 103 and 104: Gate-leakages 97 3.4 Advanced circu
Page 105 and 106: Gate-leakages 99 figure 16: SEM ima
Page 107 and 108: Gate-leakages 101 modeled with a co
Page 109 and 110: Gate-leakages 103 eq. 11 • Shadow
Page 111 and 112: Gate-leakages 105 References [1] R.
Page 113 and 114: Chapter 4 Morphology-mobility relat
Page 115 and 116: Chapter 4 109 insulators to increas
Page 117 and 118: Chapter 4 111 3.2 General device st
Page 119 and 120: Chapter 4 113 Pentacene islands are
Page 121 and 122: Chapter 4 115 For the preparation o
Page 123 and 124: Chapter 4 117 figure 3: PFTEOS:TEOS
Page 125 and 126: Chapter Chapter 4 4 119 (a): (a):
Page 127 and 128: Chapter 4 121 3.4 Device’s charac
Page 129 and 130: Chapter 4 123 mobility with the dim
Page 131 and 132: Chapter 4 125 As it can be observed
Page 133 and 134: Chapter 4 127 eq. 4 Where r
Page 135 and 136: Chapter 4 129 3.4.3 Thermal charact
Page 137 and 138: Chapter 4 131 Ea(eV) 0.50 0.45 0.40
Page 139 and 140: Chapter 4 133 I D (A) 100.0n 80.0n
Page 141 and 142: Chapter 4 135 μ (cm 2 V -1 s -1 )
Page 143 and 144: Chapter 4 137 T MN (K) 2400 2200 20
Page 145 and 146: Chapter 4 139 Such results, supply
Page 147 and 148: Chapter 4 141 References [1] O. D.
Page 149 and 150: Chapter 4 143 [26] P. Palestri, D.
Page 151 and 152: Conclusions In this PhD dissertatio
Page 153: Introduction 147 characterizing mor
Page 157: Table of acronyms and symbols _____
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