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tesi R. Miscioscia.pdf - EleA@UniSA

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Conclusions<br />

In this PhD dissertation the role played by the gate dielectric in the<br />

electrical performances of organic transistors is presented.<br />

The key aspects which have been investigated about dielectrics are<br />

the gate leakages and the models to extract the channel current, the<br />

relationship between wettability of dielectric surfaces and the growth<br />

of pentacene and then, the channel morphology and charge transport.<br />

Another important factor is the optimization of the device when<br />

keeping in mind that optimum performances are reached not just with<br />

an OTFT having high values of charge mobility but also low threshold<br />

voltages, low operation voltages, high saturation currents and low gate<br />

dissipations. In order to obtain an optimized device, a process layout<br />

and flowchart has been designed and stencils utilized to make<br />

pattering of evaporated contacts and OSC islands.<br />

This manufacturing method has been chosen because other<br />

potentially more precise techniques have been evaluated and not taken<br />

into account because they did not guarantee a working device and<br />

good performances.<br />

One of the caveats of analyzed OTFTs was the gate-leakage. This<br />

non-ideal component has been studied by means of a specific circuital<br />

model which has been developed from experimental data to explicit<br />

the dependence between gate-to-contact currents from polarization<br />

voltages in the OTFT.<br />

Annealing effects have been analyzed by means of the developed<br />

circuital model on fabricated devices in the aim to reduce, in some<br />

cases, gate dissipations. As a result of this analysis, we found<br />

Polyimide to be from the point of view of mobility an optimum gate<br />

dielectric after a simple low-temperature rapid annealing. But<br />

considering this device performances, thinking about applications<br />

such device has to carry on, it was mandatory to obtain lower working<br />

voltages by reducing the insulator thickness. But we found Polyimides<br />

to be not easy to dilute and spin in continuous defect-free film<br />

thicknesses under 1 microns. Thus, polyimide had to be abandoned in<br />

favor of more processable materials like PMMA. In order to reduce

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