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82 State of the Art References [1] Jeremy H. Burroughes, Jonathan J. Halls, Thomas Kugler, Christopher J. Newsome, “Organic thin film transistors (OTFT) for developing an alternative backplane driver technology for OLEDs”, pl. lect. proc. OSC 2008 [2] http://www.isiwebofknowledge.com/ [3] http://esi-topics.com/otft/ [4] B. Chandar Shekar, Jiyeon Lee and Shi-Woo Rhee “Organic Thin Film Transistors: Materials, Processes and Devices”, Korean J. Chem. Eng., 21(1), 267-285 (2004) [5] Z. Bao J. Locklin “Organic field effect transistors”, CRC press 2007, ISBN 978-0-8493-8080-8 [6] C. D. Dimitrakopoulos, D. J. Mascaro, IBM J. res. & dev. vol. 45 no. 1 january 2001 [7] G. Horowitz: “Organic thin film transistors: From theory to real devices” - J. Mater. Res., Vol. 19, No. 7, Jul 2004 [8] Tessler et al., Appl. Phys. Lett., 79, 2987, 2001 [9] Watkins et al., Appl. Phys. Lett., 80, 4384, 2002 [10] Park et al., Adv. Mater. 2008, 20, 4145–4147 [11] Kim, Burrows, Forrest, Science 288, 831 (2000) [12] Wang et al. Semicond. Sci. Technol. 21 (2006) 295–297 [13] McArthur et al., Mater. Res. Soc. Symp. Proc. 769, 303 (2003). [14] Li et al., J. Vac. Sci. Technol. A, Vol. 24, No. 3, May/Jun 2006 [15] Afzali et. al., Adv. Mater. 2003, 15, 2066 [16] Anthony et. al. J. Am. Chem. Soc. 2005, 127, 4986 [17] Garnier et. al. J. Am. Chem. Soc. 1993, 115, 8716 [18] Facchetti, Marks et. al. J. Am. Chem. Soc. 2004, 126, 13480 [19] Marks, Facchetti et. al. J. Am. Chem. Soc. 2005, 127, 13364 [20] Marks, Facchetti et. al. J. Am. Chem. Soc. 2005, 127, 1348 [21] Ando et. al. J. Am. Chem. Soc., 2005, 127, 14996 [22] Bao et al. J. Am. Chem. Soc., 1998, 120, 207 [23] Katz et al. J. Am. Chem. Soc., 2000, 122, 7787 [24] G. D. Wilk, et al. J. Appl. Phys. 89, 5243 (2001) [25] Bao et. al. Chem Mater., 2003, 15, 1404
Chapter 2 83 [26] Facchetti, Wasielewski, Marks et. al. Angew. Chem. Int. Ed., 2004, 43, 6363 [27] Paolo Spirito, “Elettronica Digitale”, McGraw-Hill, 1998, ISBN 88 386 0766-4 [28] Sirringhaus, Friend et. al. Nature, 1999, 401, 685 [29] Wang et al., J. Mater Sci: Mater Electron (2009) 20:S355– S358 [30] Facchetti, Marks, et. al. Adv. Mater. 2005, 17, 1705 [31] Chen et al, Appl. Phys. Lett., Vol. 85, No. 15, 11 October 2004 [32] Veres, J. et. al. Chem. Mater., 2004, 16, 4543 [33] Kobayashi, et al. Nature Mater. 2004, 3, 317 [34] Dimitrakopoulos, C.D. et. al. Science 1999, 283, 822 [35] Kim et. al., Appl. Phys. Lett., 2006, 88, 243515 [36] Halik, Klauck Nature, 2005, 431, 963 [37] Facchetti, Marks Proc. Natl. Acad. Sci., 2005, 102, 4678 [38] N. Koch, A. Kahn, J. Ghijsen, J-J. Pireaux, J. Schwartz, R.L. Johnson, A. Elschner, Appl. Surf. Sci. 82, 70 (2003). [39] Nuckoll, et. al., J. Am Chem.Soc., 2006, 128, 1788 [40] Gundlach et. al., IEEE Electron Device Letters, vol. 22, no. 12, December 2001 [41] Wu et. al. Adv. Mater 17, 184 (2005) [42] M. Nakamura et al., Appl. Phys. Lett. 86, 122112 (2005) [43] M. Nakamura et al., Proc. Int. Symp. Super-Functionality Organic Devices, IPAP Conf. Series 6 pp.130-135 [44] Puntambekar et al, Appl. Phys. Lett. Vol. 83, No. 26, 29 December 2003 [45] Sirringhaus et al., Science 2000, 290, 2123 [46] Drury, Mutsaers et al. Appl. Phys. Lett. 1998, 73, 108 [47] Halik, Klauk et al. Adv. Mater. 2002, 14, 1717 [48] Gelinck et al., Appl. Phys. Lett., Vol. 77, No. 10, 4 September 2000 [49] Blanchet et al., Appl. Phys. Lett., Vol. 84, No. 2, 12 January 2004 [50] L.B. Groenendaal et al., Adv. Mater. 12 (2000), p. 481. [51] W. Bantikassegn and O. Inganas, Thin Solid Films 293 (1997), p. 138 [52] K. Book, H. Bässler et al., Org. Electron. 4 (2003), p. 227 [53] Timpanaro et al., Chem. Phys. Lett. 394 (2004) 339–343
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Università degli Studi di Salerno
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Acknowledgments It is a pleasure to
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In loving memory of my uncle, Profe
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Introduction Nowadays, it has becom
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Introduction 3 The drawbacks of org
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Introduction 5 Artificial Skin (OTF
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Introduction 7 structure has been d
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Chapter 1 Working principles An Org
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Chapter 1 11 1.1 A model for DC beh
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Chapter 1 13 hp. 4) Decoupling betw
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Chapter 1 15 figure 2: integration
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Chapter 1 17 eq. 11 − = Then, bei
Page 25 and 26:
Chapter 1 19 The formula in eq. 18
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Chapter 1 21 and behaves as a resis
Page 29 and 30:
Chapter 1 23 eq. 22 I DS = μ C ins
Page 31 and 32:
Chapter 1 25 In eq. 27, kB is the B
Page 33 and 34:
Chapter 1 27 eq. 30 · Thu
Page 35 and 36:
Chapter 2 A survey on the state of
Page 37 and 38: Chapter 2 31 emphasizing the role p
Page 39 and 40: Chapter 2 33 Only after those years
Page 41 and 42: Chapter 2 35 In fact, usually the m
Page 43 and 44: Chapter 2 37 Examples of top-gate b
Page 45 and 46: Chapter 2 39 deposition process of
Page 47 and 48: Chapter 2 41 region is patterned by
Page 49 and 50: Chapter 2 43 figure 11: Non-Relief-
Page 51 and 52: Chapter 2 45 factor analysing, in p
Page 53 and 54: Chapter 2 47 In literature results,
Page 55 and 56: Chapter 2 49 It is clear that the c
Page 57 and 58: Chapter 2 51 In figure 17 the impro
Page 59 and 60: Chapter 2 53 figure 19: OFET trans-
Page 61 and 62: Chapter 2 55 figure 22: Comparison
Page 63 and 64: Chapter 2 57 channel and gate in Pe
Page 65 and 66: Chapter 2 59 figure 28: Pentacene b
Page 67 and 68: Chapter 2 61 figure 31: OTFT realiz
Page 69 and 70: Chapter 2 63 materials, the higher
Page 71 and 72: Chapter 2 65 The effect of the barr
Page 73 and 74: Chapter 2 67 figure 36: potential p
Page 75 and 76: Chapter 2 69 From table 2, it is ea
Page 77 and 78: Chapter 2 71 thermal-budget treatme
Page 79 and 80: Chapter 2 73 in particular in OLEDs
Page 81 and 82: Chapter 2 75 One interesting charac
Page 83 and 84: Chapter 2 77 figure 48: electrical
Page 85 and 86: Chapter 2 79 The research on the OE
Page 87: Chapter 2 81 photolysis). In this p
Page 91 and 92: Chapter 3 Gate-leakages in polymeri
Page 93 and 94: Gate-leakages 87 determined by XRD
Page 95 and 96: Gate-leakages 89 The results are:
Page 97 and 98: Gate-leakages 91 It has to be consi
Page 99 and 100: Gate-leakages 93 figure 8: Output c
Page 101 and 102: Gate-leakages 95 figure 12: electri
Page 103 and 104: Gate-leakages 97 3.4 Advanced circu
Page 105 and 106: Gate-leakages 99 figure 16: SEM ima
Page 107 and 108: Gate-leakages 101 modeled with a co
Page 109 and 110: Gate-leakages 103 eq. 11 • Shadow
Page 111 and 112: Gate-leakages 105 References [1] R.
Page 113 and 114: Chapter 4 Morphology-mobility relat
Page 115 and 116: Chapter 4 109 insulators to increas
Page 117 and 118: Chapter 4 111 3.2 General device st
Page 119 and 120: Chapter 4 113 Pentacene islands are
Page 121 and 122: Chapter 4 115 For the preparation o
Page 123 and 124: Chapter 4 117 figure 3: PFTEOS:TEOS
Page 125 and 126: Chapter Chapter 4 4 119 (a): (a):
Page 127 and 128: Chapter 4 121 3.4 Device’s charac
Page 129 and 130: Chapter 4 123 mobility with the dim
Page 131 and 132: Chapter 4 125 As it can be observed
Page 133 and 134: Chapter 4 127 eq. 4 Where r
Page 135 and 136: Chapter 4 129 3.4.3 Thermal charact
Page 137 and 138: Chapter 4 131 Ea(eV) 0.50 0.45 0.40
Page 139 and 140:
Chapter 4 133 I D (A) 100.0n 80.0n
Page 141 and 142:
Chapter 4 135 μ (cm 2 V -1 s -1 )
Page 143 and 144:
Chapter 4 137 T MN (K) 2400 2200 20
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Chapter 4 139 Such results, supply
Page 147 and 148:
Chapter 4 141 References [1] O. D.
Page 149 and 150:
Chapter 4 143 [26] P. Palestri, D.
Page 151 and 152:
Conclusions In this PhD dissertatio
Page 153 and 154:
Introduction 147 characterizing mor
Page 155 and 156:
Table of acronyms and symbols Symbo
Page 157:
Table of acronyms and symbols _____
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