tesi R. Miscioscia.pdf - EleA@UniSA

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8 Introduction References [1] H. Shirakawa, E.J. Louis, A.G. MacDiarmid, C.K. Chiang and A.J. Heeger, J. Chem. Soc. Chem. Comm. (1977) 579 [2] H. Akamatu, H. Inokuchi, Y. Matsunaga, “Electrical Conductivity of the Perylene–Bromine Complex”, Nature 173, 168 - 169 (23 January 1954); doi:10.1038/173168a0 [3] Po-Tsun Liu, Li-Wei Chu, “Innovative Voltage Driving Pixel Circuit Using Organic Thin-Film Transistor for AMOLEDs”, Journal Of Display Technology, VOL. 5, NO. 6, JUNE 2009 [4] D. Palumbo, S. Masala, P. Tassini, A. Rubino, D. Della Sala “Electrical stress degradation of small-grain polysilicon thinfilm transistors” IEEE Transactions on Electron Devices Vol. 54 NO. 3 (2007) 476-482 [5] S.M.Sze “Physics of Semiconductor Devices” - Wiley- Interscience; 2 edition (September 1981)
Chapter 1 Working principles An Organic Thin-Film Transistor (OTFT) is an electronic device which unlike conventional silicon-based devices is built by means of thin-film deposition of organic materials; it utilizes the field-effect principle to control the density of current (j) flowing between two electrodes (Source and Drain) by varying the voltage applied to a third electrode terminal named Gate. The gate terminal is insulated from the rest of the device, like in a capacitor’s plate, then the gate current could be considered the leakage current making the drain signal controlled by a small-power signal (the gate voltage VG). Since OTFT shares with the MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) device this important feature and a part of the working principles, it has been supposed to play the same role in Organic Electronics than the one played from MOSFETs. In conventional electronics FET-based circuits are extensively employed as signal amplifiers, switches, transmission gates logic, buffers, and drivers and so on. For all these reasons MOSFETs are, in fact, considered the cornerstone of modern electronics but despites of the first-order similarities of OTFTs with MOSFETs, the integration of OTFT-based circuits cannot be considered straightforward not only because of technological reasons but also from the designer’s point of view because of OTFT’s intrinsic limitations and peculiarities which in part will be analyzed in the present chapter. In inorganic TFTs and MOSFETs, the conduction type, (more precisely: the type of charge carrier involved in the conduction mechanism) is determined from the presence and the doping of the drain and source wells. Differently from their inorganic parents, in OTFTs the type of charge carrier involved in the conduction mechanism is not bound to doping but to the charge mobility of each
Page 1 and 2: Università degli Studi di Salerno
Page 3 and 4: Acknowledgments It is a pleasure to
Page 5 and 6: In loving memory of my uncle, Profe
Page 7 and 8: Introduction Nowadays, it has becom
Page 9 and 10: Introduction 3 The drawbacks of org
Page 11 and 12: Introduction 5 Artificial Skin (OTF
Page 13: Introduction 7 structure has been d
Page 17 and 18: Chapter 1 11 1.1 A model for DC beh
Page 19 and 20: Chapter 1 13 hp. 4) Decoupling betw
Page 21 and 22: Chapter 1 15 figure 2: integration
Page 23 and 24: Chapter 1 17 eq. 11 − = Then, bei
Page 25 and 26: Chapter 1 19 The formula in eq. 18
Page 27 and 28: Chapter 1 21 and behaves as a resis
Page 29 and 30: Chapter 1 23 eq. 22 I DS = μ C ins
Page 31 and 32: Chapter 1 25 In eq. 27, kB is the B
Page 33 and 34: Chapter 1 27 eq. 30 · Thu
Page 35 and 36: Chapter 2 A survey on the state of
Page 37 and 38: Chapter 2 31 emphasizing the role p
Page 39 and 40: Chapter 2 33 Only after those years
Page 41 and 42: Chapter 2 35 In fact, usually the m
Page 43 and 44: Chapter 2 37 Examples of top-gate b
Page 45 and 46: Chapter 2 39 deposition process of
Page 47 and 48: Chapter 2 41 region is patterned by
Page 49 and 50: Chapter 2 43 figure 11: Non-Relief-
Page 51 and 52: Chapter 2 45 factor analysing, in p
Page 53 and 54: Chapter 2 47 In literature results,
Page 55 and 56: Chapter 2 49 It is clear that the c
Page 57 and 58: Chapter 2 51 In figure 17 the impro
Page 59 and 60: Chapter 2 53 figure 19: OFET trans-
Page 61 and 62: Chapter 2 55 figure 22: Comparison
Page 63 and 64: Chapter 2 57 channel and gate in Pe
Page 65 and 66:
Chapter 2 59 figure 28: Pentacene b
Page 67 and 68:
Chapter 2 61 figure 31: OTFT realiz
Page 69 and 70:
Chapter 2 63 materials, the higher
Page 71 and 72:
Chapter 2 65 The effect of the barr
Page 73 and 74:
Chapter 2 67 figure 36: potential p
Page 75 and 76:
Chapter 2 69 From table 2, it is ea
Page 77 and 78:
Chapter 2 71 thermal-budget treatme
Page 79 and 80:
Chapter 2 73 in particular in OLEDs
Page 81 and 82:
Chapter 2 75 One interesting charac
Page 83 and 84:
Chapter 2 77 figure 48: electrical
Page 85 and 86:
Chapter 2 79 The research on the OE
Page 87 and 88:
Chapter 2 81 photolysis). In this p
Page 89 and 90:
Chapter 2 83 [26] Facchetti, Wasiel
Page 91 and 92:
Chapter 3 Gate-leakages in polymeri
Page 93 and 94:
Gate-leakages 87 determined by XRD
Page 95 and 96:
Gate-leakages 89 The results are:
Page 97 and 98:
Gate-leakages 91 It has to be consi
Page 99 and 100:
Gate-leakages 93 figure 8: Output c
Page 101 and 102:
Gate-leakages 95 figure 12: electri
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Gate-leakages 97 3.4 Advanced circu
Page 105 and 106:
Gate-leakages 99 figure 16: SEM ima
Page 107 and 108:
Gate-leakages 101 modeled with a co
Page 109 and 110:
Gate-leakages 103 eq. 11 • Shadow
Page 111 and 112:
Gate-leakages 105 References [1] R.
Page 113 and 114:
Chapter 4 Morphology-mobility relat
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Chapter 4 109 insulators to increas
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Chapter 4 111 3.2 General device st
Page 119 and 120:
Chapter 4 113 Pentacene islands are
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Chapter 4 115 For the preparation o
Page 123 and 124:
Chapter 4 117 figure 3: PFTEOS:TEOS
Page 125 and 126:
Chapter Chapter 4 4 119 (a): (a):
Page 127 and 128:
Chapter 4 121 3.4 Device’s charac
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Chapter 4 123 mobility with the dim
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Chapter 4 125 As it can be observed
Page 133 and 134:
Chapter 4 127 eq. 4 Where r
Page 135 and 136:
Chapter 4 129 3.4.3 Thermal charact
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Chapter 4 131 Ea(eV) 0.50 0.45 0.40
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Chapter 4 133 I D (A) 100.0n 80.0n
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Chapter 4 135 μ (cm 2 V -1 s -1 )
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Chapter 4 137 T MN (K) 2400 2200 20
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Chapter 4 139 Such results, supply
Page 147 and 148:
Chapter 4 141 References [1] O. D.
Page 149 and 150:
Chapter 4 143 [26] P. Palestri, D.
Page 151 and 152:
Conclusions In this PhD dissertatio
Page 153 and 154:
Introduction 147 characterizing mor
Page 155 and 156:
Table of acronyms and symbols Symbo
Page 157:
Table of acronyms and symbols _____
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