tesi R. Miscioscia.pdf - EleA@UniSA

76 State of the Art
an AFM tapping-mode image is presented at very low scale, to show
the presence and uniformity of SWNT.
figure 46: film of stabilized PS-b-P4VP (a); the same material with the highest doping
concentration (b); AFM image (c) [57]
Observing also the transmittance measurements (figure 47),
these results state this kind of material is very good for fabrication of
completely transparent OTFTs. Devices have been produced, with
these contacts and pentacene semiconductor, through spin-coating
deposition and micro-imprinting patterning.
figure 47: transmittance measurements of the composite film obtained by Sung in [57]. Sheet
resistance can be varied by doping; the value here applied is 6000 Ω/sq [57].
The estimated performances are: mobility of 0.05 cm 2 /Vs and
on/off ratio of 10 5 , as can be seen from figure 48.