tesi R. Miscioscia.pdf - EleA@UniSA

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56 State of the Art 2.6 Polymeric dielectrics It is necessary to remember that the insulating polymer have the great advantage to be deposited from solution and therefore to be cheaper than the inorganic competitors. This is one of the reasons why in OE the last purpose is to realize whole organic circuitry (fullyorganic). In the above-mentioned Facchetti’s review [30] is reported a table that summarizes the performance of the OTFT realized with insulating polymer (see figure 23). figure 23: Polymeric Dielectrics and OTFT performances [30] 2.6.1 Composite dielectrics The improvement of static performance of the OTFT can be achieved also by means insulating composite materials. In [31] it is shown the comparison between a pentacene based OTFT device with
Chapter 2 57 channel and gate in Pedot:PSS with a BGTC structure (see figure 24) with PVP (poly-4-vinylphenol) dielectric and the same material in which they are dispersed TiO2 nanoparticles (as is known, the TiO2 is a high-k dielectric, k = 80 [24]). figure 24: The OTFT structure with insulator composite as shown in the Wilk’s paper [24] To quantify the difference in the device behaviour it is important consider the output characteristic of such kind of TFT (see figure 25). figure 25: the increase in the OTFT transconductance due to the use of nanocomposite dielectric with high-k materials [24] A qualitative and quantitative explanation of this optimization is to be found clearly in the increase of dielectric constant of the film obtained as shown in figure 26 for different concentrations of nanoparticles.
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Università degli Studi di Salerno
Page 3 and 4:
Acknowledgments It is a pleasure to
Page 5 and 6:
In loving memory of my uncle, Profe
Page 7 and 8:
Introduction Nowadays, it has becom
Page 9 and 10:
Introduction 3 The drawbacks of org
Page 11 and 12: Introduction 5 Artificial Skin (OTF
Page 13 and 14: Introduction 7 structure has been d
Page 15 and 16: Chapter 1 Working principles An Org
Page 17 and 18: Chapter 1 11 1.1 A model for DC beh
Page 19 and 20: Chapter 1 13 hp. 4) Decoupling betw
Page 21 and 22: Chapter 1 15 figure 2: integration
Page 23 and 24: Chapter 1 17 eq. 11 − = Then, bei
Page 25 and 26: Chapter 1 19 The formula in eq. 18
Page 27 and 28: Chapter 1 21 and behaves as a resis
Page 29 and 30: Chapter 1 23 eq. 22 I DS = μ C ins
Page 31 and 32: Chapter 1 25 In eq. 27, kB is the B
Page 33 and 34: Chapter 1 27 eq. 30 · Thu
Page 35 and 36: Chapter 2 A survey on the state of
Page 37 and 38: Chapter 2 31 emphasizing the role p
Page 39 and 40: Chapter 2 33 Only after those years
Page 41 and 42: Chapter 2 35 In fact, usually the m
Page 43 and 44: Chapter 2 37 Examples of top-gate b
Page 45 and 46: Chapter 2 39 deposition process of
Page 47 and 48: Chapter 2 41 region is patterned by
Page 49 and 50: Chapter 2 43 figure 11: Non-Relief-
Page 51 and 52: Chapter 2 45 factor analysing, in p
Page 53 and 54: Chapter 2 47 In literature results,
Page 55 and 56: Chapter 2 49 It is clear that the c
Page 57 and 58: Chapter 2 51 In figure 17 the impro
Page 59 and 60: Chapter 2 53 figure 19: OFET trans-
Page 61: Chapter 2 55 figure 22: Comparison
Page 65 and 66: Chapter 2 59 figure 28: Pentacene b
Page 67 and 68: Chapter 2 61 figure 31: OTFT realiz
Page 69 and 70: Chapter 2 63 materials, the higher
Page 71 and 72: Chapter 2 65 The effect of the barr
Page 73 and 74: Chapter 2 67 figure 36: potential p
Page 75 and 76: Chapter 2 69 From table 2, it is ea
Page 77 and 78: Chapter 2 71 thermal-budget treatme
Page 79 and 80: Chapter 2 73 in particular in OLEDs
Page 81 and 82: Chapter 2 75 One interesting charac
Page 83 and 84: Chapter 2 77 figure 48: electrical
Page 85 and 86: Chapter 2 79 The research on the OE
Page 87 and 88: Chapter 2 81 photolysis). In this p
Page 89 and 90: Chapter 2 83 [26] Facchetti, Wasiel
Page 91 and 92: Chapter 3 Gate-leakages in polymeri
Page 93 and 94: Gate-leakages 87 determined by XRD
Page 95 and 96: Gate-leakages 89 The results are:
Page 97 and 98: Gate-leakages 91 It has to be consi
Page 99 and 100: Gate-leakages 93 figure 8: Output c
Page 101 and 102: Gate-leakages 95 figure 12: electri
Page 103 and 104: Gate-leakages 97 3.4 Advanced circu
Page 105 and 106: Gate-leakages 99 figure 16: SEM ima
Page 107 and 108: Gate-leakages 101 modeled with a co
Page 109 and 110: Gate-leakages 103 eq. 11 • Shadow
Page 111 and 112: Gate-leakages 105 References [1] R.
Page 113 and 114:
Chapter 4 Morphology-mobility relat
Page 115 and 116:
Chapter 4 109 insulators to increas
Page 117 and 118:
Chapter 4 111 3.2 General device st
Page 119 and 120:
Chapter 4 113 Pentacene islands are
Page 121 and 122:
Chapter 4 115 For the preparation o
Page 123 and 124:
Chapter 4 117 figure 3: PFTEOS:TEOS
Page 125 and 126:
Chapter Chapter 4 4 119 (a): (a):
Page 127 and 128:
Chapter 4 121 3.4 Device’s charac
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Chapter 4 123 mobility with the dim
Page 131 and 132:
Chapter 4 125 As it can be observed
Page 133 and 134:
Chapter 4 127 eq. 4 Where r
Page 135 and 136:
Chapter 4 129 3.4.3 Thermal charact
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Chapter 4 131 Ea(eV) 0.50 0.45 0.40
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Chapter 4 133 I D (A) 100.0n 80.0n
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Chapter 4 135 μ (cm 2 V -1 s -1 )
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Chapter 4 137 T MN (K) 2400 2200 20
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Chapter 4 139 Such results, supply
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Chapter 4 141 References [1] O. D.
Page 149 and 150:
Chapter 4 143 [26] P. Palestri, D.
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Conclusions In this PhD dissertatio
Page 153 and 154:
Introduction 147 characterizing mor
Page 155 and 156:
Table of acronyms and symbols Symbo
Page 157:
Table of acronyms and symbols _____
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