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Superconducting Technology Assessment - nitrd

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Examples of what has been achieved through each approach are given in Table 5-5 below. Josephson output<br />

interfaces have demonstrated Gbps communication of data to room-temperature electronics. Actual bit error rates<br />

are better than listed for cases where no errors were found in the data record. Stacked SQUIDs use DC power and<br />

produce Non-Return to Zero (NRZ) outputs, which are significant advantages, but at the cost of many more JJs per<br />

output. Latching interfaces develop higher voltages than SQUIDs, but require double the signal bandwidth for their<br />

RZ output. The latching interface must also be synchronized to the on-chip data rate.<br />

Higher performance is expected for higher-current-density junctions; speed increases linearly for latching circuits<br />

and increases as the square root of current density for non-latching circuits. The Advanced <strong>Technology</strong> Program<br />

demonstration at NGST (then TRW) successfully integrated semiconductor amplifiers (10 mW dissipation) onto the<br />

same multi-chip module with Suzuki stack outputs.<br />

Both coaxial cable and ribbon cable have been used to carry signals from 4 K to room-temperature electronics.<br />

In the NSA crossbar program, GaAs HBT amplifiers (10-30 mW dissipation) were operated at an intermediate<br />

temperature, approximately 30 K.<br />

TABLE 5-5. RESULTS OF OUTPUT TECHNIQUES<br />

JJ output type<br />

JJ<br />

count<br />

dc<br />

power<br />

Vout<br />

(mV)<br />

NRZ<br />

Rate<br />

(Gbps)<br />

BER<br />

(max)<br />

Jc<br />

(kA/cm 2 )<br />

Stacked SQUIDs 60 Yes 1.3 Yes 1.0 1e-07 1<br />

SFQ/Latch 5 No 2 No 3.3 1e-08 8<br />

Suzuki Stack (6X) 17 No 12 No 10 1e-07 8<br />

Suzuki (4X) + 12 No 10 No 2 1e-09 2<br />

GaAs Amplifier<br />

5.3.2 OUTPUT: 4 K RSFQ TO ROOM TEMPERATURE ELECTRONICS<br />

– READINESS AND PROJECTIONS<br />

Commercial off-the-shelf (COTS) fiber optic components provide much of the basic infrastructure for input and<br />

output between room-temperature and 4 K electronics. For example, 40 Gbps (OC-768) transceiver parts are<br />

becoming widely available. However, as discussed in Section 5.1, they are very expensive and are not designed to<br />

be compatible with word-wide, low-power, short-range applications. A significant effort must be put into tailoring<br />

COTS systems to meet the requirements of an RSFQ computer.<br />

The challenge for output interfaces is raising the signal level by 60 dB from 200 µV to 200 mV at 50 Gbps. HEMT<br />

amplifiers have demonstrated low power (4 mW) operation at 12 K with low noise figures of 1.8 dB in the band<br />

4-8 GHz. Modern High Electron Mobility Transistor amplifiers are capable of the 35 GHz bandwidth needed for<br />

NRZ outputs at 50 Gbps, and will operate at 4 K.<br />

A significant effort must be put into tailoring COTS<br />

systems to meet the requirements of an RSFQ computer.<br />

106

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