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Superconducting Technology Assessment - nitrd

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Inter-chip Communications<br />

Driver and receiver circuits have already been demonstrated to 60 Gbps per line in the NG fabrication processes. Since<br />

speed and bit error rate (BER) will improve as J C increases, the circuit technology is ready now. The principal task will be<br />

to accommodate the increased number of high-data-rate lines on each chip and MCM. Shrinking bump size and minimum<br />

spacing, better design tools, and simulation models will be important to minimize reflections and cross-talk at<br />

both the signal and ground chip-to-MCM bumps. The crossbar switch program provides a rich experience base in the<br />

engineering of ribbon cables. In particular, the trade-off between heat leak and signal loss is well understood.<br />

Table 3.1-2 summarizes the readiness of superconductive circuits today and projects readiness in 2010 based on the roadmap.<br />

TABLE 3.1-2. SUPERCONDUCTIVE CIRCUIT TECHNOLOGY READY FOR MAJOR INVESTMENT AND DEVELOPMENT<br />

Circuit Type<br />

2004 Readiness<br />

Projected 2010 Readiness<br />

Logic<br />

– Small circuits @ lower speed.<br />

– >10 6 JJ/cm 2 @ 50 GHz clock.<br />

SFQ RAM<br />

– Experimental 4 kb RAM<br />

@ low speed.<br />

– Analysis of SFQ ballistic RAM.<br />

– 256 kb SFQ ballistic RAM<br />

@ 500 ps access time.<br />

Hybrid RSFQ-CMOS<br />

RAM<br />

– Experimental proof-of-concept.<br />

– 256 kb hybrid @ 500 ps.<br />

Monolithic RSFQ<br />

MRAM<br />

– RSFQ write/read<br />

concept formulated.<br />

– 128 kb hybrid @ 500 ps.<br />

Vector Register, FIFO<br />

– 32 bit FIFO @ 40 GHz.<br />

– 4 kb FIFO @ 50 GHz.<br />

Communication<br />

Circuits<br />

– Chip-to-chip @ 60 Gbps.<br />

– 64-bit word-wide chip-to-chip<br />

@ 50 GHz.<br />

I/O<br />

– 10 Gbps driver.<br />

– 64-bit word-wide drivers @ 40 Gbps/s.<br />

Switch<br />

– 2.5 Gbps per port circuit<br />

switch, scalable.<br />

– 64-bit word wide, scalable<br />

@ 50 Gbps per port.<br />

In evaluating the circuit technology and projecting a high probability of success in HEC, the panel considered<br />

the availability of VLSI fabrication. As much as anything, success in RSFQ processor development will depend on<br />

a dedicated industrial-quality VLSI manufacturing facility that provides a significant step-up in topological design<br />

rules and chip yield from current R&D facilities (see Chapter 4).<br />

Cryogenic testing is much more difficult than room temperature testing. Testing at 50 to 100 GHz clock frequencies<br />

magnifies the challenge significantly. A high-speed test bench will be required that is customized to test and evaluate<br />

all superconductive circuits from the cell libraries through the RSFQ processor integrated with RAM, including memory<br />

and network switches. The test bench must provide environmental support (cooling, RF and magnetic shielding),<br />

power supplies, commercial and specialized digital test equipment, and fixturing to accommodate various device<br />

modules. SFQ diagnostic circuits have been demonstrated and should be employed to meet the requirements of<br />

the test plans.<br />

48

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