1Gb: x8, x16 Automotive DDR2 SDRAM - Micron

More documents

Recommendations

Info

Figure 68: READ-to-Power-Down or Self Refresh Entry CK# CK Command CKE Address A10 DQS, DQS# DQ T0 T1 T2 READ Valid NOP NOP NOP RL = 3 T3 T4 T5 Valid DO DO DO DO Valid T6 T7 NOP1 Power-down 2 or self refresh entry Transitioning Data t CKE (MIN) Don’t Care Notes: 1. In the example shown, READ burst completes at T5; earliest power-down or self refresh entry is at T6. 2. Power-down or self refresh entry may occur after the READ burst completes. Figure 69: READ with Auto Precharge-to-Power-Down or Self Refresh Entry CK# CK Command CKE Address A10 DQS, DQS# DQ T0 T1 T2 READ Valid NOP NOP NOP RL = 3 1Gb: x8, x16 Automotive DDR2 SDRAM Power-Down Mode T3 T4 T5 Valid Valid DO DO DO DO Transitioning Data T6 T7 NOP1 Power-down or self refresh 2 entry t CKE (MIN) Don’t Care Notes: 1. In the example shown, READ burst completes at T5; earliest power-down or self refresh entry is at T6. 2. Power-down or self refresh entry may occur after the READ burst completes. PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 116 Micron Technology, Inc. reserves the right to change products or specifications without notice. � 2010 Micron Technology, Inc. All rights reserved.
Figure 70: WRITE-to-Power-Down or Self Refresh Entry CK# CK Command CKE Address A10 DQS, DQS# DQ T0 T1 T2 WRITE Valid NOP NOP NOP WL = 3 T3 T4 T5 DO Valid Valid DO DO DO T6 Valid t WTR T7 T8 NOP1 Power-down or self refresh entry1 Transitioning Data tCKE (MIN) Note: 1. Power-down or self refresh entry may occur after the WRITE burst completes. Figure 71: WRITE with Auto Precharge-to-Power-Down or Self Refresh Entry CK# CK Command CKE Address A10 DQS, DQS# DQ T0 T1 T2 WRITE Valid NOP NOP NOP WL = 3 T3 T4 T5 DO Valid Valid DO DO DO 1Gb: x8, x16 Automotive DDR2 SDRAM Power-Down Mode WR2 Indicates a break in time scale Ta0 Valid1 NOP Transitioning Data Ta1 Ta2 Power-down or self refresh entry t CKE (MIN) Don’t Care Don’t Care Notes: 1. Internal PRECHARGE occurs at Ta0 when WR has completed; power-down entry may occur 1 x t CK later at Ta1, prior to t RP being satisfied. 2. WR is programmed through MR9–MR11 and represents ( t WR [MIN] ns/ t CK) rounded up to next integer t CK. PDF: 09005aef840eff89 1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 117 Micron Technology, Inc. reserves the right to change products or specifications without notice. � 2010 Micron Technology, Inc. All rights reserved.
Page 1 and 2:
Automotive DDR2 SDRAM MT47H128M8 -
Page 3 and 4:
1Gb: x8, x16 Automotive DDR2 SDRAM
Page 5 and 6:
Page 7 and 8:
Page 9 and 10:
Functional Description Automotive I
Page 11 and 12:
Functional Block Diagrams The DDR2
Page 13 and 14:
Ball Assignments and Descriptions F
Page 15 and 16:
Table 3: FBGA 84-Ball - x16 and 60-
Page 17 and 18:
Packaging Package Dimensions Figure
Page 19 and 20:
FBGA Package Capacitance Table 4: I
Page 21 and 22:
Table 6: Temperature Limits Paramet
Page 23 and 24:
I DD7 Conditions The detailed timin
Page 25 and 26:
Table 10: DDR2 I DD Specifications
Page 27 and 28:
PDF: 09005aef840eff89 Micron Techno
Page 29 and 30:
Page 31 and 32:
Page 33 and 34:
Page 35 and 36:
Page 37 and 38:
Page 39 and 40:
AC and DC Operating Conditions Tabl
Page 41 and 42:
Input Electrical Characteristics an
Page 43 and 44:
Page 45 and 46:
Table 19: Output Characteristics Pa
Page 47 and 48:
Figure 15: Full Strength Pull-Up Ch
Page 49 and 50:
Figure 17: Reduced Strength Pull-Up
Page 51 and 52:
AC Overshoot/Undershoot Specificati
Page 53 and 54:
Input Slew Rate Derating 1Gb: x8, x
Page 55 and 56:
Page 57 and 58:
Figure 23: Nominal Slew Rate for t
Page 59 and 60:
Page 61 and 62:
Table 34: Single-Ended DQS Slew Rat
Page 63 and 64:
Figure 27: Nominal Slew Rate for t
Page 65 and 66: Figure 31: AC Input Test Signal Wav
Page 67 and 68: 6. Bank addresses (BA) determine wh
Page 69 and 70: Table 38: Truth Table - Current Sta
Page 71 and 72: NO OPERATION (NOP) LOAD MODE (LM) A
Page 73 and 74: Burst Length Figure 33: MR Definiti
Page 75 and 76: Write Recovery Power-Down Mode 1Gb:
Page 77 and 78: Extended Mode Register (EMR) Figure
Page 79 and 80: On-Die Termination (ODT) ODT effect
Page 81 and 82: Extended Mode Register 2 (EMR2) Fig
Page 83 and 84: PDF: 09005aef840eff89 Micron Techno
Page 85 and 86: 1Gb: x8, x16 Automotive DDR2 SDRAM
Page 87 and 88: Figure 42: Multibank Activate Restr
Page 89 and 90: Figure 43: READ Latency CK# CK Comm
Page 91 and 92: Figure 45: Nonconsecutive READ Burs
Page 93 and 94: Figure 48: READ-to-PRECHARGE - BL =
Page 95 and 96: Figure 50: Bank Read - Without Auto
Page 97 and 98: Figure 52: x4, x8 Data Output Timin
Page 99 and 100: Figure 54: Data Output Timing - t A
Page 101 and 102: Figure 55: Write Burst CK# CK Comma
Page 103 and 104: Figure 58: WRITE Interrupted by WRI
Page 105 and 106: Figure 60: WRITE-to-PRECHARGE CK# C
Page 107 and 108: Figure 62: Bank Write - with Auto P
Page 109 and 110: Figure 64: Data Input Timing PRECHA
Page 111 and 112: SELF REFRESH 1Gb: x8, x16 Automotiv
Page 113 and 114: Power-Down Mode 1Gb: x8, x16 Automo
Page 115: Table 43: Truth Table - CKE 1Gb: x8
Page 119 and 120: Figure 74: PRECHARGE Command-to-Pow
Page 121 and 122: Reset CKE Low Anytime 1Gb: x8, x16
Page 123 and 124: ODT Timing 1Gb: x8, x16 Automotive
Page 125 and 126: MRS Command to ODT Update Delay Dur
Page 127 and 128: Figure 83: ODT Turn-On Timing When
Page 129: Figure 85: ODT Turn-On Timing When
show all

1Gb: x8, x16 Automotive DDR2 SDRAM - Micron

Create successful ePaper yourself

Delete template?

Save as template?