1Gb: x8, x16 Automotive DDR2 SDRAM - Micron

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1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 31 � 2010 Micron Technology, Inc. All rights reserved.
Table 11: AC Operating Specifications and Conditions (Continued)
Not all speed grades listed may be supported for this device; refer to the title page for speeds supported; Notes: 1–5 apply to the entire table;
VDDQ = 1.8V ±0.1V, VDD = 1.8V ±0.1V
AC Characteristics -187E -25E -25 -3E -3 -37E -5E
Parameter Symbol Min Max Min Max Min Max Min Max Min Max Min Max Min Max Units Notes
Input setup time tISb 125 – 175 – 175 – 200 – 200 – 250 – 350 – ps 31, 33
Input hold time tIHb 200 – 250 – 250 – 275 – 275 – 375 – 475 – ps 31, 33
Input setup time tISa 325 – 375 – 375 – 400 – 400 – 500 – 600 – ps 31, 33
Input hold time tIHa 325 – 375 – 375 – 400 – 400 – 500 – 600 – ps 31, 33
Input pulse width tIPW 0.6 – 0.6 – 0.6 – 0.6 – 0.6 – 0.6 – 0.6 – tCK 18, 32
Command and Address
ACTIVATE-to-
ACTIVATE delay,
same bank
ACTIVATE-to-READ
or WRITE delay
ACTIVATE-to-
PRECHARGE delay
t RC 54 – 55 – 55 – 54 – 55 – 55 – 55 – ns 18, 34,
51
t RCD 13.125 – 12.5 – 15 – 12 – 15 – 15 – 15 – ns 18
t RAS 40 70K 40 70K 40 70K 40 70K 40 70K 40 70K 40 70K ns 18, 34,
35
PRECHARGE period tRP 13.125 – 12.5 – 15 – 12 – 15 – 15 – 15 – ns 18, 36
PRE-