1Gb: x8, x16 Automotive DDR2 SDRAM - Micron
1Gb: x8, x16 Automotive DDR2 SDRAM - Micron
1Gb: x8, x16 Automotive DDR2 SDRAM - Micron
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Table 27: AC Input Test Conditions<br />
Parameter Symbol Min Max Units Notes<br />
Input setup timing measurement reference level address<br />
balls, bank address balls, CS#, RAS#, CAS#, WE#, ODT,<br />
DM, UDM, LDM, and CKE<br />
VRS See Note 2 1, 2, 3, 4<br />
Input hold timing measurement reference level address<br />
balls, bank address balls, CS#, RAS#, CAS#, WE#, ODT,<br />
DM, UDM, LDM, and CKE<br />
Input timing measurement reference level (single-ended)<br />
DQS for x4, <strong>x8</strong>; UDQS, LDQS for <strong>x16</strong><br />
Input timing measurement reference level (differential)<br />
CK, CK# for x4, <strong>x8</strong>, <strong>x16</strong>; DQS, DQS# for x4, <strong>x8</strong>; RDQS,<br />
RDQS# for <strong>x8</strong>; UDQS, UDQS#, LDQS, LDQS# for <strong>x16</strong><br />
<strong>1Gb</strong>: <strong>x8</strong>, <strong>x16</strong> <strong>Automotive</strong> <strong>DDR2</strong> <strong>SDRAM</strong><br />
AC Overshoot/Undershoot Specification<br />
V RH See Note 5 1, 3, 4, 5<br />
V REF(DC) V DDQ × 0.49 V DDQ × 0.51 V 1, 3, 4, 6<br />
V RD V IX(AC) V 1, 3, 7, 8, 9<br />
Notes: 1. All voltages referenced to V SS.<br />
2. Input waveform setup timing ( t IS b) is referenced from the input signal crossing at the<br />
V IH(AC) level for a rising signal and V IL(AC) for a falling signal applied to the device under<br />
test, as shown in Figure 29 (page 64).<br />
3. See Input Slew Rate Derating (page 53).<br />
4. The slew rate for single-ended inputs is measured from DC level to AC level, V IL(DC) to<br />
V IH(AC) on the rising edge and V IL(AC) to V IH(DC) on the falling edge. For signals referenced<br />
to V REF, the valid intersection is where the “tangent” line intersects V REF, as shown in<br />
Figure 22 (page 56), Figure 24 (page 57), Figure 26 (page 62), and Figure 28<br />
(page 63).<br />
5. Input waveform hold ( t IH b) timing is referenced from the input signal crossing at the<br />
V IL(DC) level for a rising signal and V IH(DC) for a falling signal applied to the device under<br />
test, as shown in Figure 29 (page 64).<br />
6. Input waveform setup timing ( t DS) and hold timing ( t DH) for single-ended data strobe is<br />
referenced from the crossing of DQS, UDQS, or LDQS through the Vref level applied to<br />
the device under test, as shown in Figure 31 (page 65).<br />
7. Input waveform setup timing ( t DS) and hold timing ( t DH) when differential data strobe<br />
is enabled is referenced from the cross-point of DQS/DQS#, UDQS/UDQS#, or LDQS/<br />
LDQS#, as shown in Figure 30 (page 64).<br />
8. Input waveform timing is referenced to the crossing point level (V IX) of two input signals<br />
(V TR and V CP) applied to the device under test, where V TR is the true input signal and V CP<br />
is the complementary input signal, as shown in Figure 32 (page 65).<br />
9. The slew rate for differentially ended inputs is measured from twice the DC level to<br />
twice the AC level: 2 × V IL(DC) to 2 × V IH(AC) on the rising edge and 2 × V IL(AC) to 2 ×<br />
V IH(DC) on the falling edge. For example, the CK/CK# would be –250mV to 500mV for CK<br />
rising edge and would be 250mV to –500mV for CK falling edge.<br />
PDF: 09005aef840eff89<br />
1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 52 <strong>Micron</strong> Technology, Inc. reserves the right to change products or specifications without notice.<br />
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