1Gb: x8, x16 Automotive DDR2 SDRAM - Micron

Table 19: Output Characteristics
Parameter Min Nom Max Units Notes
Output impedance See Output Driver Characteristics (page 46) Ω 1, 2
Pull-up and pull-down mismatch 0 – 4 Ω 1, 2, 3
Output slew rate 1.5 – 5 V/ns 1, 4, 5, 6
Figure 13: Output Slew Rate Load
Notes: 1. Absolute specifications: 0°C ≤ T C ≤ +85°C; V DDQ = 1.8V ±0.1V, V DD = 1.8V ±0.1V.
2. Impedance measurement conditions for output source DC current: V DDQ = 1.7V;
V OUT = 1420mV; (V OUT - V DDQ)/I OH must be less than 23.4Ω for values of V OUT between
V DDQ and V DDQ - 280mV. The impedance measurement condition for output sink DC current:
V DDQ = 1.7V; V OUT = 280mV; V OUT/I OL must be less than 23.4Ω for values of V OUT
between 0V and 280mV.
3. Mismatch is an absolute value between pull-up and pull-down; both are measured at
the same temperature and voltage.
4. Output slew rate for falling and rising edges is measured between V TT - 250mV and
V TT + 250mV for single-ended signals. For differential signals (DQS, DQS#), output slew
rate is measured between DQS - DQS# = –500mV and DQS# - DQS = 500mV. Output slew
rate is guaranteed by design but is not necessarily tested on each device.
5. The absolute value of the slew rate as measured from V IL(DC)max to V IH(DC)min is equal to
or greater than the slew rate as measured from V IL(AC)max to V IH(AC)min. This is guaranteed
by design and characterization.
6. IT and AT devices require an additional 0.4 V/ns in the MAX limit when T C is between –
40°C and 0°C.
Output
(V OUT )
1Gb: x8, x16 Automotive DDR2 SDRAM
Output Electrical Characteristics and Operating Conditions
V TT = V DDQ /2
25�
Reference
point
PDF: 09005aef840eff89
1gbddr2_ait_aat.pdf – Rev. C 7/11 EN 45 Micron Technology, Inc. reserves the right to change products or specifications without notice.
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