ICMCTF 2012! - CD-Lab Application Oriented Coating Development

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complexing properties with a large number of transition metal ions, including the rare-earth ions. However, the complexes formed in this case are tris complexes and are not very stables. On the other hand, the inclusion of one more quinoline group stabilize the compound. Here, Li[RE(q)4] complexes (RE 3+ = La 3+ , Lu 3+ and Y 3+ ) were synthesized in our laboratories and then used as electron transporting and emitting layer in OLEDs. The organic thin films were deposited in high vacuum environment by thermal evaporation onto quartz and silicon substrates, at a base pressure of 2,0x10 - 3 Pa and with a 0,1nm/s deposition rate. The optical characterization of the RE-complexes showed emission in the range 510-525 nm, the same observed in the Alq3 spectra, while the absorption was observed in different wavelengths: 382 nm for Y/La-complexes and 388 nm for Lu-complex. The OLEDs were fabricated with indium tin oxide layer (ITO) as anode, NPB as hole transporting layer (25nm), Li[RE(q)4] as both electron transporting and emitting layer (40nm), and aluminum as cathode (120nm). The electroluminescence (EL) spectra presented a broad band from 520 to 540nm and exhibited green color emission related to the 8hydroxyquinoline ligand without intramolecular energy transfer from quinoline to RE 3+ ions. Moreover, in the EL spectra was also observed an interesting dependency between the maximum energy peak position and the half-width of emission band with the atomic radius of the RE ion used. For the fabricated OLED, the best luminance result was achieved to Li[Y(q)4] complex, with a maximum luminance of 30 cd/m 2 taken at 11V and with a current of 2mA. The results obtained for our devices are comparable with similar devices based on Alq3, presenting similar optical and electrical properties. 10:20am C2-3/F4-3-8 Effect of the deposition process and substrate temperature on the microstructure defects and electrical conductivity of thin Mo films, H. Köstenbauer (harald.koestenbauer@plansee.com), Plansee SE, Austria, D. Rafaja, U. Mühle, G. Schreiber, TU Bergakademie Freiberg, Germany, M. Kathrein, J. Winkler, Plansee SE, Austria Thin molybdenum films are commonly used as back electrodes in Cu(In,Ga)Se2 thin film solar cells and as contact material for thin film transistors/liquid crystal displays. For these applications, high electrical conductivity of the films is essential. As it follows from the classical Drude theory of the electrical conductivity in metals, all microstructure defects are in principle acting as scattering centres for electrons. Consequently, the microstructure defects increase always the electrical resistance of the material, but their “scattering cross sections” for electrons are supposed to differ strongly. In our study, we quantified the effect of point defects, dislocations and grain boundaries on the electrical resistivity of molybdenum films having a constant thickness of 500 nm. The kind and density of the microstructure defects in the Mo films were modified by applying different physical vapour deposition methods (DC magnetron sputtering, pulsed DC magnetron sputtering and RF magnetron sputtering) and by depositing the thin films at different deposition temperatures (room temperature, 150°C, 250°C and 350°C). As expected, the electrical resistivity of the Mo films, which was measured using a 4point probe, decreased with increasing substrate temperature. Furthermore, the highest resistivity was observed in RF magnetron sputtered samples, where also the effect of the substrate temperature was most pronounced. The microstructure of the thin films was characterised by using a combination of glancing angle X-ray diffraction (GAXRD), X-ray reflectivity (XRR), XRD pole figure measurement, scanning electron microscopy with electron back scattered diffraction (SEM/EBSD) and transmission electron microscopy (TEM). GAXRD revealed residual stresses, stress-free lattice parameters, crystallite size and microstrain in the molybdenum films. XRR together with SEM and TEM gave information about the morphology of the films; this information was complemented by texture measurements performed using XRD and EBSD. The stress-free lattice parameters were used as a measure of the density of point defects, the microstrain as a measure of the dislocation density and the crystallite and grain size as a measure of the distance between the grain boundaries. The kind of the grain boundaries was deduced from the mutual orientation of crystallites. It was concluded that the point defects have the highest impact on the electrical conductivity of physical vapour deposited molybdenum thin films, followed by dislocations, and grain and crystallite boundaries. 10:40am C2-3/F4-3-9 Study of the electrical performance of rf magnetron sputtered TiO2 source and CuO drain split gate transistor, S. Gopikishan, P. Laha, A.B. Panda, P.K. Barhai, Birla Institute of Technology, India, AK. Das, Bhabha Atomic Research Center, India, I. Banerjee, SK. Mahapatra (skmahapatra@bitmesra.ac.in), Birla Institute of Technology, India We have fabricated split-gate field effect transistor based on Si/Al2O3 substrate. TiO2 thin film (n-type) used as source, CuO thin film (p-type) as drain and platinum thin film as gate of the transistor. The separation between the two platinum gates was ~ 0.1 µm and confirmed by Scanning Electron Microscope (SEM). The crystallinity of the Al2O3, TiO2 and CuO Tuesday Morning, April 24, 2012 30 films was confirmed by the GIXRD. Resistance (RS), conductance (G), and I-V measurement of the split-gate field effect transistor were performed by Impedance analyzer and source meter respectively. The field effect on the transistor current was studied by applying different bias voltage between the splitting gate thin films of platinum. It was found that the conductance and current were varied in a quantized step of 2e 2 /h with varying gate voltage. The Shubnikov-de Haas effect in channel resistance (Rc) vs B at different reverse bias of the transistor was also studied. 11:00am C2-3/F4-3-10 Characteristics and photocatalytic reactivity of TiO2 beads synthesized using a microwave-assisted hydrothermal method, W. Wu (wanyu@mdu.edu.tw), Y. Tsou, S. Huang, MingDao University, Taiwan In this study, a two-step process involving sol-gel and microwave hydrothermal techniques are used to synthesis a novel TiO2 structure, so called as TiO2 beads. It exhibits the required characteristics for photocataysis such as large surface area and well anatase crystallinity. Various synthesis parameters were investigated to evaluate the proper processing window of TiO2 beads such as the complex amount in the sol-gel process, temperature and heating time in the microwave hydrothermal process. It was found that microwave hydrothermal techniques can much reduce the process time and the size of TiO2 nanocrystalline. The texture and morphology of obtained nanoporous TiO2 beads were examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The crystalline phase was analyzed using x-ray diffractometer (XRD) and Raman spectroscopy. The surface chemical bonding state was examined using x-ray photoelectron spectroscopy (XPS). The specific surface, pore diameter and pore volume of beaded TiO2 was examined using BET. UV-visible diffuse reflectance spectra were achieved using a UVvisible spectrophotometer. The photocatalytic reactivity was obtained by degradation the Methylene blue. 11:20am C2-3/F4-3-11 Effect of growth parameters and annealing on some properties of sputtered ZnO thin films, R. Chander (rcohri@yahoo.com), GPC Bhikhiwind, India ZnO thin films were deposited by RF magnetron sputtering technique onto silicon (001) and fused quartz substrates. The X-ray diffraction studies revealed (002) plane oriented growth of ZnO nano-grains. Grain size and surface roughness analysis performed onto AFM scans showed that av. grain size of film ~75 nm and r.m.s. roughness of film ~ 7nm. The effect of oxygen partial pressure during deposition was studied. Optical studies revealed ~ 12% increase in transmittance in the visible range for thin films grown in oxygen partial pressure than films grown without oxygen during deposition. Films exhibited direct optical band gap ~3.2 to 3.37 eV for films grown at different oxygen partial pressure as obtained from transmittance data. The observed change in optical band gap is corroborated with compositional analysis that showed deficiency of oxygen in ZnO matrix, which decreases for films grown at higher oxygen partial pressure. Refractive index and extinction coefficient was calculated by fitting the spectroscopic ellipsometery data obtained for 0.5 oxygen partial pressure film. Post deposition annealing of thin films in ambient environment led to surface reconstruction and change in the morphology of grains along with their growth during annealing at higher temperature. Fundamentals and Technology of Multifunctional Thin Films: Towards Optoelectronic Device Applications Room: Pacific Salon 3 - Session C4-1 Transparent Conductive Films: Inorganic Oxides, Organic Materials, Metals Moderator: P. Kelly, Manchester Metropolitan University, UK, S. Lim, Lawrence Berkeley National Laboratory, US 8:00am C4-1-1 ZnO films deposited from a filtered cathodic vacuum arc: characterization and device applications, J.G. Partridge (jim.partridge@rmit.edu.au), E.H. Mayes, M.R. Field, D.G. McCulloch, RMIT University, Australia, H-S Kim, R. Heinhold, S. Elzwawi, G.C. Turner, R.J. Reeves, M.W. Allen, University of Canterbury, New Zealand Existing applications for zinc oxide thin films include transparent electronic devices, transparent conducting electrodes and ultraviolet photonics. Deposition methods such as molecular beam epitaxy and pulsed laser deposition are normally required to achieve films with sufficient quality for electronic device applications. Unfortunately, these methods typically incur high cost and provide limited scalability. The filtered cathodic vacuum arc (FCVA) deposition technique offering both low cost and high throughput is routinely employed to produce aluminium doped ZnO for degenerate
transparent conducting layers. However, the potential for this technique to produce large area, low-defect ZnO films for electronic devices has largely been overlooked. We report on the structural, optical and electrical characteristics of ZnO films deposited on a-plane sapphire substrates by FCVA. These films exhibit desirable properties including high transparency, moderate intrinsic carrier concentrations (10 17 – 10 18 cm -3 ), Hall mobility up to 10 cm 2 /Vs and low surface roughness (with RMS values typically
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I C M C T F 2 0 1 2 INTERNATIONAL C
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TABLE OF CONTENTS Welcoming Remarks
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2012 ICMCTF SCHEDULE OF EVENTS DAY
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SYMPOSIUM A Coatings for Use at Hig
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Marco Cremona Pontificia Universida
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Exhibitor Keynote Lecture Tuesday,
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2011/12, discuss ideas and prioriti
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At the focus topic, from the experi
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2012 R.F. Bunshah Annual Award & IC
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ICMCTF 2012 Graduate Student Awards
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ICMCTF 2012 thanks Plansee for thei
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ICMCTF 2012 thanks AJA Internationa
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ICMCTF 2012 thanks CemeCon for thei
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ICMCTF 2012 Short Courses April 22
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ICMCTF 2012 Planning Grid We provid
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Key to Session/Paper Numbers A Coat
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Monday Morning, April 23, 2012 Fund
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New Horizons in Coatings and Thin F
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Fundamentals and Technology of Mult
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Advanced Characterization of Coatin
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Hard Coatings and Vapor Deposition
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Tribology & Mechanical Behavior of
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Hard Coatings and Vapor Deposition
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Coatings for Use at High Temperatur
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Applications, Manufacturing, and Eq
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Wednesday Afternoon, April 25, 2012
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Thursday Afternoon Poster Sessions
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Free Caricatures & Massages!! E-1 V
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ICMCTF 2012 EXHIBIT HALL Internatio
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I C M C T F 2012 S P O N S O R S Bo
Page 79 and 80: All in Good Measure A 24 µm scan o
Page 81 and 82: Call For Abstracts Deadline: MAY 2,
Page 83: CC800 ® /9 HIPIMS true integration
Page 86: Exhibit Hall Reception - Atlas Ball
Page 89: Kaufman & Robinson announces their
Page 93 and 94: Miba Coating Group is the specialis
Page 95 and 96: PLANSEE SE, 6600 Reutte, Austria, T
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Page 101 and 102: Plenary Talk Room: Golden Ballroom
Page 103 and 104: content. Analyses of the oxidised c
Page 105 and 106: - The control on the gradient in re
Page 107 and 108: μ = 0.4 to μ = 0.9). On the other
Page 109 and 110: Hard Coatings and Vapor Deposition
Page 111 and 112: application tests the ta-C coated d
Page 113 and 114: 4:10pm C2-2/F4-2-10 Investigation o
Page 115 and 116: process with surfactant on WO3/ITO
Page 117 and 118: is already reported. To further com
Page 119 and 120: conditions. The details of the comp
Page 121 and 122: esidual stress and to the Poisson
Page 123 and 124: Coatings for Use at High Temperatur
Page 125 and 126: eactive gases with the target mater
Page 129: emerging fields. State-of-the-art t
Page 133 and 134: methods provide similar carrier den
Page 135 and 136: of AISI 52100 steels by developing
Page 137 and 138: deposition based on high power puls
Page 141 and 142: coatings removed from the aluminum
Page 143 and 144: spectroscopy varies from 25 at% to
Page 145 and 146: This article describes how to use s
Page 147 and 148: een demonstrated both theoretically
Page 149 and 150: Furthermore, the silane coupling ag
Page 151 and 152: 10:40am A1-1-9 High temperature oxi
Page 153 and 154: 10:40am B4-2-10 Understanding the d
Page 155 and 156: 11:00am B5-1-10 Hard nanocrystallin
Page 157 and 158: * Sandia National Laboratories is a
Page 159 and 160: fluidized bed of tin, zinc and alum
Page 163 and 164: mechanical and chemical properties.
Page 165 and 166: duration for super-low friction see
Page 167 and 168: stainless steel DIN X42Cr13 surface
Page 169 and 170: 2:30pm TS1-1-3 Surface engineering
Page 175 and 176: X-ray diffraction patterns of the Z
Page 177 and 178: 11:20am B6-1-11 Direct current magn
Page 179 and 180: loading situations could help to ob
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Energetic Materials and Micro-Struc
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The present work was supported by t
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silica-based hydrophilic coatings i
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extent depending on the actual grow
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[1] F. Tasnádi, B. Alling, C. Hög
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eproducibility of the preparation o
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showed by the uncoated 4140 steel s
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polarization resistance and corrosi
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thin films in which a multiscale mo
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centers, ascribed to conduction ele
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BP-26 Characterization of laser abl
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BP-38 Stress signature of an amorph
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simultaneously optimize materials p
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CP-17 Effects of UV Light Treatment
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amorphous structure with a smooth s
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addition, it was observed that the
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EP-5 The effective Indenter concept
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the substrates directly or after ra
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as-grown films using textured Si as
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proposed memory device exhibits exc
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FP-24 Effect of hydrogen addition o
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oxide obtained was correlated to th
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Post Deadline Discoveries and Innov
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chemical bonds have also been achie
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9:40am B3-1-6 Compressive stress ge
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10:20am D2-1-8 Corrosion Resistance
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property combination is attractive
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PVD is a challenging task. The pres
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Chang, G.W.: C2-3/F4-3-3, 29; GP-3,
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Huang, K.H.: BP-33, 102 Huang, P.H.
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Moody, N.R.: F6-1-1, 7 Moon, S.: D1
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Szeremley, D.: G3-1-7, 68 Szesz, E.
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NOTES 145
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Description of Research Highlights:
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their presentations in order to eva
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NOTES 151
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153
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MARK YOUR CALENDAR FOR ICMCTF 2013!
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