ICMCTF 2012! - CD-Lab Application Oriented Coating Development

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dominates the characteristics of a-Si:H TFTs. The behavior of electrical characteristics with mechanical strain can be explained by trap state redistribution of the bandgap. The disordered bonds may generate a redistribution of trap states, resulting in unstable electrical characteristics such as threshold voltage, subthreshold swing, and mobility of carriers. During mechanical strain the deep states are redistributed in a Gaussian distribution, and are dissimilar to ordinary acceptor-like deep states which manifest with exponential distributions. Electronic states near the Fermi level act as recombination centers for photogenerated carries, and it may valuable for illumination of the transistors. We conclude that the gap state density of an a-Si:H layer under mechanical strain is fundamental to the reliability and development of flexible electronics. CP-25 Effects of RF power on the properties of Si thin films deposited by an ICP CVD system with internal antennas, J.H. Hsieh (jhhsieh@mail.mcut.edu.tw), YAN-LIANG. Lai, Ming Chi University of Technology, Taiwan, Yuichi. Setsuhara, Osaka University, Japan The plasma of an ICP-CVD system attached with four internal antennas was used to deposit doped and un-doped Si thin films. Hydrogenated microcrystalline silicon (μc-Si:H) films were prepared under various RF power, while the flow ratio of SiH4/H2 was fixed at 1/4. During deposition, an OES (optical emission spectrometer) and a plasma probe were used to characterize the conditions of plasma. The crystalllinity and opto-electrical properties of the Si:H films were investigated using Raman scattering spectroscopy, XRD, Hall effect measurement system, and UV-Vis photometer. It is found that the crystallinity of μc-Si:H film was significantly affected by plasma density which was increased with the increase of the power. This could be caused by the increase of I*SiH3/IHa. It is also found the plasma potential would decrease with the increase of power, while the plasma density would increase with the increase of power. The carrier density, mobility, and photoconductivity were found related to the plasma potential and density which might affect defect density in the films. CP-27 The different radio-frequency powers on characteristics of boron-doped amorphous carbon films prepared by reactive radiofrequency chemical vapor deposition, T.S. Chen, S.E. Chiou, S.T. Shiue (stshiue@dragon.nchu.edu.tw), National Chung Hsing University, Taiwan Boron-doped amorphous carbon (a-C:B) films were deposited on n-type silicon (n-Si) wafers using reactive radio-frequency (RF) chemical vapor deposition. A boron target was used as the dopant source, and a mixture of pure methane (CH4) and argon (Ar) gases with flow rates of 2 and 10 sccm, respectively, was selected as the precursor gas. Five kinds of a-C:B films were prepared with RF powers of 100, 200, 300, 400, and 500 W. The substrate temperature and working pressure were set at 298 K and 6 Pa, respectively. The thicknesses of a-C:B films were measured using field emission scanning electron microscopy (FESEM). Alternatively, the characteristics of a-C:B films were analyzed by X-ray photoelectron spectrometer (XPS) and Raman scattering spectra (RSS). After the a-C:B/n- Si junction was sputtered with gold (Au) and aluminum (Al) electrodes, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Au/a- C:B/n-Si/Al heterojunction devices were measured. FESEM results show that all the thicknesses of a-C:B films are about 100 nm. XPS analyzed results reveal that the boron atoms are successfully doped into amorphous carbon films, and the boron content increases from 0.02 to 28.87 at.% as the RF power increases from 100 to 500 W. The RSS data of a-C:B films indicate that the ratio of the integrated intensity of the D band to that of the G band (ID/IG) increases with increasing the RF power from 100 to 300 W, but decreases with increasing the RF power from 300 to 500 W. It implies that the a-C:B film prepared with the RF power of 300 W has a relatively higher graphitization degree. Our analyzed results also show that all the I-V characteristics of Au/a-C:B/n-Si/Al heterojunction devices exhibit the rectifying behavior. When the a-C:B film was prepared with the RF power of 300 W, the Au/a-C:B/n-Si/Al heterojunction device displays the best rectifying I-V characteristics, and its ideality factor is about 1.40. The C-V measurement under the frequency of 1 kHz shows that as the a- C:B film was prepared by the RF power of 300 W, the built-in voltage of the Au/a-C:B/n-Si/Al device is about 0.2 V. CP-28 InN/GaN Quantum Well Heterostructures: Structural Characteristics and Strain Induced Modifications of the Electronic Properties, -. Kioseoglou, Kalesaki, Aristoteles University of Thessaloniki, Greece, Komninou, Aristotleles University of Thessaloniki, Greece, Karakostas (karakost@auth.gr), Aristoteles University of Thessaloniki, Greece An important step towards optimization of InN/GaN based devices is the identification of the structural characteristics of the corresponding interfaces since the favourable bonding configurations determine the materials polarity and consequently the direction of spontaneous polarization. We have addressed this issue through empirical potential calculations on Thursday Afternoon Poster Sessions 108 InN/GaN interfaces comprising misfit dislocations [1]. An appropriately parameterized Tersoff interatomic potential [2] was implemented and energetic calculations were performed on interfaces of III- and N- polarity, lying at the single- or double bonds and having a wurtzite or zinc blende stacking sequence in accordance with high resolution transmission electron microscopy observations. Based on these results III-polarity interfaces, cutting single bonds are energetically favourable. In our present study, additional calculations are performed on subcritical thickness InN/GaN QWs, which exhibit lower dislocation densities as well as reduced InN decomposition and are currently implemented in the fabrication of near-UV light emitting diodes [3,4]. Ab initio calculations are performed under modified pseudopotentials, accurately reproducing the InN and GaN band gap values, on supercells comprising 1 monolayer (ML) thick InN elastically strained in 5 nm thick GaN barriers having a wurtzite or zinc blende stacking at the interface. The former is found to be energetically favourable. Subsequent calculations on supercells comprising 1 ML thick InN in 8 and 11 nm thick GaN barriers as well as 3 ML InN in 11 nm thick GaN having a wurtzite stacking, depicted a variation in III-N bond lengths. This variation become more significant as the barrier thickness decreases or the QW thickness increases. Hence the strain and consequently piezoelectric polarization are modified. The latter is attested by density of states calculations, which show a vast decrease of the band gap when 5 nm thick barriers are considered, while a significant decrease is also recorded at the 3 ML InN / 11 nm GaN barrier heterostructure in comparison with the 1 ML InN supercell. Our results scrutinize recent experimental observations [3,4] and could prove beneficial for tailoring the optoelectronic properties of InN/GaN QWs. [1] J. Kioseoglou et al., J. Mater. Sci. 43, 3982 (2008) [2] J. Kioseoglou et al., Phys. Stat. Sol. (b) 245, 1118 (2008) [3] E. Dimakis et al., Phys. Stat. Sol. (a) 205, 1070 (2008) [4] A. Yoshikawa et al., J. Vac. Sci. Technol. B 26, 1071 (2008) [5] Work supported by EC under the 7 th European Framework Project DOTSENSE (Grant No. STREP 224212) CP-29 Optical properties of AlN:Ag and Al-Si-N:Ag nanostructured films and the effect of thermal annealing, A. Siozios, E. Lidorikis, P. Patsalas (ppats@cc.uoi.gr), University of Ioannina, Greece Aluminum Nitride (AlN) is a wide bandgap semiconductor that has been studied extensively because of its remarkable optical, mechanical, physical and chemical properties that make it suitable for a variety of applications such as optoelectronic devices, protective coatings, wave-guides, etc. The incorporation of Ag into an AlN matrix can provide additional functionality through the localized surface plasmon resonance (LSPR): a collective oscillation of conduction electrons, fueled by light illumination at the proper frequency. In this work we investigate under which circumstances LSPR is manifested. In particular, we have grown nanostructured films consisting of an AlN matrix and Ag inclusions in the form of nanospheres, nanosheets and atomic dispersions, by sputtering and pulsed laser deposition (PLD). The refractive index of the matrix was varying by controlling the matrix microstructure and density (amorphous or wurtzite AlN, a-AlN and w-AlN, respectively) and the optical absorption in the visible range was controlled by the incorporation of Si in to the AlN matrix. The refractive index of the films is correlated with the films’ density measured by X-Ray Reflectivity (XRR). The optical properties of the films were studied using Optical Reflectivity Spectroscopy (ORS) in vertical incidence in the 1.5-5.25 eV spectral range. The spectroscopic data are critically compared to Finite Difference Time Domain (FDTD) calculations of the optical response. The effect of the thermal annealing to the plasmonic behavior of the AlN:Ag and Al-Si-N:Ag has been studied systematically by repeating the ORS measurement after annealing in inert Ar atmospheres cycles at various temperatures as high as 800 o C. CP-30 Investigation of photoluminescent characteristics and optical properties of thin film zinc silicate doped with manganese, K.H. Yoon, J.H. Kim (joohan@cbnu.ac.kr), Chungbuk National University, Republic of Korea The photoluminescent characteristics and optical properties of manganesedoped zinc silicate (Zn2SiO4:Mn) thin films were investigated. The Zn2SiO4:Mn films were deposited by radio frequency magnetron sputtering, followed by post-deposition annealing at temperatures of 600 – 1200 °C. The Zn2SiO4:Mn films exhibited a pronounced optical absorption edge in the near ultraviolet wavelength region and a high optical transparency in the visible spectral range. The maximum transmittance reached 0.922 at 597 nm, which was very close to the transmittance of the fused quartz substrate alone. The refractive index of the Zn2SiO4:Mn films showed normal dispersion behavior. X-ray diffraction and atomic force microscopy measurements revealed that the as-deposited Zn2SiO4:Mn films had an
amorphous structure with a smooth surface morphology. The Zn2SiO4:Mn films became crystalline after annealing at 800 °C and the crystallinity of the films was continuously improved up to 1200 °C. The annealed Zn2SiO4:Mn films had a polycrystalline rhombohedral structure with no preferred crystallographic orientation of the crystallites. The photoluminescence spectra of the annealed Zn2SiO4:Mn films showed broad-band emissions with a peak maximum at around 523 nm in the green range. The PL emission intensity was enhanced as the annealing temperature increased, resulting from the improvement of the crystallinity of the Zn2SiO4:Mn films. The excitation band exhibited a peak maximum at 243 nm in the near ultraviolet region, which was considered to be associated with the charge transfer transition of divalent manganese ion in the Zn2SiO4 system. CP-31 Er:Si Silicide Formation and Temperature Dependence of Barrier Inhomogeneity, H. Efeoglu (hefeoglu@atauni.edu.tr), Turkey, Y. Babacan, Erzincan University, Turkey Stabilized metal silicides with low barrier for ohmic contact or high barrier for rectification has advantages for nanometer scaled device fabrication. The use of silicide instead of impurity doped silicon for drain and source has advantages in terms of processing temperature and much less trap creation during the fabrication. Ultra shallow junction can be formed easily with the metals having low diffusion coefficient in silicon. Low barrier of metal-silicide on source/drain is key point for ultrascaled complementary metal/oxide/semiconductors in future technology. On the other side Schottky barrier as a gate terminal may suffer from barrier inhomogeneity. Because of that, much better performance of SB require careful I-V analysis which gives some of suggestions related to material selection and fabrication parameters. Inhomogeneity of Schottky barrier at room temperature widely studied during the last decade. In this study, the temperature dependence of barrier distribution below room temperature presented for the first time. With this context, the rectification effect of Er-silicide on p-Si was investigated. Sputter tehnique is used for deposition and Er-Silicide thermally activated by annealing above 300 ºC under the nitrogen atmosphere. I-V-T measurement of multiple diodes was analysed for the barrier inhomogeneity of Er-Silicide/p-Si junctions. Coatings for Biomedical and Healthcare Applications Room: Golden Ballroom - Session DP Symposium D Poster Session DP-1 Characterization and antibacterial performance of biocompatible Ti-Zn-O coatings deposited on titanium implants, M.T. Tsai, Hungkuang University, Taiwan, Y.Y. Chang (yinyu@mail2000.com.tw), National Formosa University, Taiwan, Y.C. Chen, MingDao University, Taiwan, H.L. Huang, J.T. Hsu, China Medical University, Taichung, Taiwan Titanium(Ti)-based materials have been used for dental/orthopedic implants due to their excellent biological compatibility, superior mechanical strength and high corrosion resistance. A better anti-bacterial performance of Ti implant is beneficial for the osseointegration and for avoiding the infection after implantation surgery. Bacterial colonization may also be prevented or reduced by different surface properties of the material and/or by the use of antiseptic surface coatings. Titanium and zinc oxides have attracted wide interest because of their good photocatalytic activity, high stability, antibacterial property and non-toxicity. In this study, biocompatible Ti-Zn- O coatings with different Zn contents were deposited on a bio-grade pure Ti implant material by using a cathodic-arc evaporation system with plasma enhanced duct equipment. Pure Ti and Zn cathodes were used for the deposition. Characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy(XPS) and scanning electron microscopy (SEM), the crystal structure, bonding state and surface morphology of the deposited crystalline Ti-Zn-O were studied. To verify the susceptibility of implant surface to bacterial adhesion, Actinobacillus actinomycetemcomitans (A. actinomycetemcomitans) and Staphylococcus aureus (S. aureus), found frequently in the implant-associated infections, was chosen for in vitro antibacterial analyses by a fluorescence staining method employing Syto9 and bacterial viability agar tests. In addition, the biocompatibility of human gingival fibroblast (HGF) and human primary osteoblasts (hOBs) cells on the coatings was also evaluated. The results suggested that the Ti-Zn-O coatings can improve antibacterial performance with compatible soft-tissue and hard-tissue biological performances. DP-2 Anti-bacterial Performance of Zirconia Coatings on Titanium Implants, H.L. Huang, China Medical University, Taichung, Taiwan, Y.Y. Chang (yinyu@mail2000.com.tw), National Formosa University, Taiwan, J.C. Weng, Y.C. Chen, MingDao University, Taiwan, C.H. Lai, T.M. Shieh, China Medical University, Taichung, Taiwan Bacterial adhesion and colonization are considered to play a key role in the pathogenesis of peri-implant disease, an inflammatory process leading to soft and hard tissue destruction around a Ti implant. The osseointegration of titanium implants is related to their composition and surface treatment. Zirconia coatings have been proved to increase their applications in the biomedical fields such as orthopedic devices and dental implants by improving implant osseointegration. In this study, doped ZrO2 coatings with different Ag and Cu contents were deposited on bio-grade pure Ti implant materials. A twin-gun magnetron sputtering system was used for the deposition of the ZrO2-Ag(Cu) coating. The Ag and Cu contents in the deposited coatings were controlled by the magnetron power and bias voltage. The films were then annealed using rapid thermal annealing (RTA) at 350 ° C for 8 min to induce the nucleation and growth of Ag(Cu) particles on the film surface. WDS was used to characterize the composition of the deposited ZrO2-Ag(Cu) coatings. The crystalline structure and bonding states of the coatings were analyzed by XRD and XPS. The antibacterial behavior will vary, depending on the amount and size of the Ag(Cu) particles on the coated Ti sample. In this study, Actinobacillus actinomycetemcomitans (A. actinomycetemcomitans) and Staphylococcus aureus (S. aureus) found frequently in the implant-associated infections, were chosen for in vitro anti-bacterial analyses by a fluorescence staining method employing Syto9 and bacterial viability agar tests. The antibacterial activity was quantified as the fluorescence detected at 488 nm by an ELISA (enzyme-linked immunosorbent assay). It showed that the nanostructure and Ag and Cu contents of the ZrO2-Ag(Cu) coatings were correlated with the antibacterial performance. DP-3 Diffusion mechanism and Ag + release kinetics on ZrCN - Ag NPs antimicrobial coatings, S. Calderon V. (secave44@gmail.com), Universidade do Minho, Dept. Física, Portugal, R. Escobar Galindo, Instituto de Ciencia de Materiales de Madrid (ICMM -CSIC), Spain, A. Cavaleiro, University of Coimbra, Portugal, S. Carvalho, Universidade do Minho, Dept. Física, Portugal Silver nanoparticles (NPs) have been extensively used to provide antibacterial properties to several commercial devices such as sportswear, toys and baby articles, among others. In fact, numerous reports have been published during the last few years regarding silver NPs attaining antimicrobial properties in countless kinds of materials and for a considerably good number of microorganisms. However, the durability of this effect is ignored in most of those reports, precluding their use in long term applications. Thus, this effect gains particular importance when dealing with applications involving the human body: the so-called biomaterials. In this work ZrCN coatings doped with Ag NPs were produced on SS316L by unbalance magnetron sputtering using two targets, Zr and Zr/Ag in an Ar, C2H2, N2 atmosphere. In order to investigate the evolution of silver dissolution and the corrosion resistance, these ZrCN with Ag NP’s were immersed for different periods of time, on three different electrolytes. 0.89% NaCl and phosphate buffer saline (PBS) with and without proteins ( 1.0 g/l bovine serum albumin ) were used to simulate the human body fluids. The former was selected due to its simplicity which permits to avoid the signal from other components in order to determine the kinetic mechanisms of the silver ions release. However, the latters were utilized in order to understand the influence of phosphates and proteins in this process. Inductively coupled plasma optical emission spectrometry (ICP-OES) was used to determine the content of silver ions in the electrolytes, as a function of the immersion time. Electrochemical impedance spectroscopy (EIS) and potentiodynamics curves were used to evaluated the electrochemical response of the samples. A profile evaluation of the films before and after immersion was methodically carried out by means of glow discharge optical emission spectroscopy (GDOES). Structural and morphological characterizations were carried out by X-ray diffraction (XRD) and Scanning electron microscopy (SEM), respectively. Finally, morphological and structural characterization, silver content evolution and electrochemical response have been correlated, and a model containing information about morphology, structure and ions kinetics is performed. DP-4 Controlling the drug release from biocompatible polymers by changing plasma-treated area, K. Hagiwara, Keio University, Japan, T. Hasebe, Toho University Sakura Medical center, Japan, R. Asakawa, Keio University, Japan, A. Kamijo, Yokohama City University Hosptital, Japan, T. Suzuki, A. Hotta (hotta@mech.keio.ac.jp), Keio University, Japan In this study, plasma surface treatment was introduced as a method for controlling the drug release. Currently, the implantation of DES with surface coating of a drug-containing polymer, is the most powerful way to 109 Thursday Afternoon Poster Sessions
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I C M C T F 2 0 1 2 INTERNATIONAL C
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TABLE OF CONTENTS Welcoming Remarks
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2012 ICMCTF SCHEDULE OF EVENTS DAY
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SYMPOSIUM A Coatings for Use at Hig
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Marco Cremona Pontificia Universida
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Exhibitor Keynote Lecture Tuesday,
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2011/12, discuss ideas and prioriti
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At the focus topic, from the experi
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2012 R.F. Bunshah Annual Award & IC
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ICMCTF 2012 Graduate Student Awards
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ICMCTF 2012 thanks Plansee for thei
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ICMCTF 2012 thanks AJA Internationa
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ICMCTF 2012 thanks CemeCon for thei
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ICMCTF 2012 Short Courses April 22
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ICMCTF 2012 Planning Grid We provid
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Key to Session/Paper Numbers A Coat
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Monday Morning, April 23, 2012 Fund
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New Horizons in Coatings and Thin F
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Fundamentals and Technology of Mult
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Advanced Characterization of Coatin
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Hard Coatings and Vapor Deposition
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Tribology & Mechanical Behavior of
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Coatings for Use at High Temperatur
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Applications, Manufacturing, and Eq
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Wednesday Afternoon, April 25, 2012
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Thursday Afternoon Poster Sessions
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Free Caricatures & Massages!! E-1 V
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ICMCTF 2012 EXHIBIT HALL Internatio
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I C M C T F 2012 S P O N S O R S Bo
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All in Good Measure A 24 µm scan o
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Call For Abstracts Deadline: MAY 2,
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CC800 ® /9 HIPIMS true integration
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Exhibit Hall Reception - Atlas Ball
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Kaufman & Robinson announces their
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Miba Coating Group is the specialis
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PLANSEE SE, 6600 Reutte, Austria, T
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� ��
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Plenary Talk Room: Golden Ballroom
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content. Analyses of the oxidised c
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- The control on the gradient in re
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μ = 0.4 to μ = 0.9). On the other
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application tests the ta-C coated d
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4:10pm C2-2/F4-2-10 Investigation o
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process with surfactant on WO3/ITO
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is already reported. To further com
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conditions. The details of the comp
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esidual stress and to the Poisson
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eactive gases with the target mater
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emerging fields. State-of-the-art t
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transparent conducting layers. Howe
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methods provide similar carrier den
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of AISI 52100 steels by developing
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deposition based on high power puls
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coatings removed from the aluminum
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spectroscopy varies from 25 at% to
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This article describes how to use s
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een demonstrated both theoretically
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Furthermore, the silane coupling ag
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10:40am A1-1-9 High temperature oxi
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10:40am B4-2-10 Understanding the d
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11:00am B5-1-10 Hard nanocrystallin
Page 157 and 158: * Sandia National Laboratories is a
Page 159 and 160: fluidized bed of tin, zinc and alum
Page 161 and 162: Coatings for Use at High Temperatur
Page 163 and 164: mechanical and chemical properties.
Page 165 and 166: duration for super-low friction see
Page 167 and 168: stainless steel DIN X42Cr13 surface
Page 169 and 170: 2:30pm TS1-1-3 Surface engineering
Page 171 and 172: Coatings for Use at High Temperatur
Page 173 and 174: Hard Coatings and Vapor Deposition
Page 175 and 176: X-ray diffraction patterns of the Z
Page 177 and 178: 11:20am B6-1-11 Direct current magn
Page 179 and 180: loading situations could help to ob
Page 181 and 182: Energetic Materials and Micro-Struc
Page 183 and 184: The present work was supported by t
Page 185 and 186: silica-based hydrophilic coatings i
Page 187 and 188: extent depending on the actual grow
Page 189 and 190: [1] F. Tasnádi, B. Alling, C. Hög
Page 191 and 192: eproducibility of the preparation o
Page 193 and 194: showed by the uncoated 4140 steel s
Page 195 and 196: polarization resistance and corrosi
Page 197 and 198: thin films in which a multiscale mo
Page 199 and 200: centers, ascribed to conduction ele
Page 201 and 202: BP-26 Characterization of laser abl
Page 203 and 204: BP-38 Stress signature of an amorph
Page 205 and 206: simultaneously optimize materials p
Page 207: CP-17 Effects of UV Light Treatment
Page 211 and 212: addition, it was observed that the
Page 213 and 214: EP-5 The effective Indenter concept
Page 215 and 216: the substrates directly or after ra
Page 217 and 218: as-grown films using textured Si as
Page 219 and 220: proposed memory device exhibits exc
Page 221 and 222: FP-24 Effect of hydrogen addition o
Page 223 and 224: oxide obtained was correlated to th
Page 225 and 226: Post Deadline Discoveries and Innov
Page 227 and 228: chemical bonds have also been achie
Page 229 and 230: 9:40am B3-1-6 Compressive stress ge
Page 231 and 232: 10:20am D2-1-8 Corrosion Resistance
Page 233 and 234: property combination is attractive
Page 235 and 236: PVD is a challenging task. The pres
Page 237 and 238: Chang, G.W.: C2-3/F4-3-3, 29; GP-3,
Page 239 and 240: Huang, K.H.: BP-33, 102 Huang, P.H.
Page 241 and 242: Moody, N.R.: F6-1-1, 7 Moon, S.: D1
Page 243 and 244: Szeremley, D.: G3-1-7, 68 Szesz, E.
Page 245 and 246: NOTES 145
Page 247 and 248: Description of Research Highlights:
Page 249 and 250: their presentations in order to eva
Page 251 and 252: NOTES 151
Page 253 and 254: 153
Page 255 and 256: MARK YOUR CALENDAR FOR ICMCTF 2013!
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ICMCTF 2012! - CD-Lab Application Oriented Coating Development

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