ICMCTF 2012! - CD-Lab Application Oriented Coating Development

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the discharge phenomenon and X-ray photoelectron spectroscopy (XPS) is conducted to corroborate the findings. BP-43 Electrical transport properties in ZrN-SiNx-ZrN structures investigated by I-V measurements, D. Oezer, C.S. Sandu, EPFL, Switzerland, R. Sanjines (rosendo.sanjines@epfl.ch), Ecole Polytechnique Fédérale de Lausanne, Switzerland Nanocomposite thin films based on polycrystalline transition metal nitride (MeN, Me = Ti, Cr, Zr, …), in which the metallic MeN crystallites are embedded in an amorphous silicon nitride matrix, are considered as interesting materials due to their rich variety of physical properties, such as high hardness and improved thermal and chemical stability. The mechanical, optical and electrical properties are strongly linked to the architecture of the silicon nitride tissue phase at the grain boundaries. According to our best knowledge the local chemical composition and the thickness of the grain boundaries have never been probed directly so far. However the interpretation of the temperature dependent electrical resistivity data in the frame work of the grain boundary scattering model combined with structural and chemical analyses allows to correlate the evolution of the silicon nitride coverage layer to the electron grain boundary transmission probability. In order to investigate the mechanism of electrical conduction through single grain boundaries, we have investigated the transverse electric transport through well defined ZrNy/SiNx/ZrNy multilayers with varying SiNx interlayer thicknesses and chemical compositions by means of I-V characteristic curves. At room temperature, depending on the SiNx thickness linear I-V and symmetric nonlinear I-V characteristics are observed. On the bases of standard models for M-I-M such as the Poole-Frenkel and Tunneling models, we will discuss the applicability of our results to the interpretation of the electric conduction in “real” nanocomposite MeN/SiNx systems. Fundamentals and Technology of Multifunctional Thin Films: Towards Optoelectronic Device Applications Room: Golden Ballroom - Session CP Symposium C Poster Session CP-1 Investigation on Physical Properties of CuInSe2 Films Prepared by Pulsed Laser Deposition, M.H. Wen, J.Y. Luo, Y.T. Hsieh, C.C. Chang, C.H. Hsu, Y.R. Wu, W.H. Chao, M.K. Wu, Institute of Physics, Academia Sinica, Nankang, Taiwan, H.S. Koo (frankkoo@must.edu.tw), Ming-Hsin University of Science and Technology,Taiwan We report the study on thin films composed of the Cu-rich CuInSe2 (CISe). The films were deposited on the glass and Mo-coated substrate, respectively, by the pulsed laser deposition (PLD) method at substrate temperatures from 450� ~ 600�. Both films revealed an obvious orientation (112) when the substrate temperature above 450 �. By applying different substrate temperatures, different grain size and crystallinity of CISe films were obtained. The films showed a p-type electrical conductivity with a high absorption coefficient of 10 4 ~ 10 5 cm –1 and optical energy gap of 0.92 ~ 0.97 eV. CP-2 Electro-optical properties and damp heat stability of Al-doped ZnO thin films prepared by laser induced high current pulsed arc deposition, J.B. Wu (wujinbao@itri.org.tw), C.Y. Chen, C.C. Shih, J.J. Chang, M.S. Leu, Material and Chemical Research Laboratories, Industrial Technology Research Institute, Taiwan, H.Y. Tseng, Y.C. Lu, BeyondPV Co., Ltd, Taiwan Highly transparent conductive Al-doped ZnO (AZO) thin film was deposited at 100 °C by laser induced high current pulsed arc (LIHCPA) from an Al-Zn alloy target (2 and 3 wt.% of Al doping content). The film’s properties were highly correlated to the growth conditions, including O2 partial pressure and Al doping content. The results clearly showed that when the O2 partial pressure increased from 8×10 -2 Pa to 3×10 -1 Pa, the resistivity gradually increased from 4.2×10 -4 to 1.9 ×10 -3 Ω-cm and 5.2×10 -4 to 2.3 ×10 -3 Ω-cm for the 3 and 2 wt.% of Al-Zn target. Likewise, t he band gap of the AZO films calculated by UV/VIS spectrometer measurement decreased from 3.77 eV to 3.58 eV and 3.56 to 3.44 eV as well. The XRD results showed that the AZO films preferred c-axis orientation along the (002) plane. XPS analysis revealed that the Zn and O chemical state can be assigned to the Zn exits in the oxidized state and O occurs in two chemical state (I) O 2- ions on wurtzite structure of hexagonal Zn 2+ ion array, surrounded by Zn and the (II) chemisorbed oxygen species like O 2- , O - and O2 - at the grain boundaries, respectively. The degradation and performance studies of AZO and its variants have been performed under varied temperature conditions at 85% RH. The results indicated that samples held at 37 °C and 45 °C did not show any degradation of the sheet resistance Thursday Afternoon Poster Sessions 104 upon exposure. However, the final sheet resistance of AZO films held at 85 °C showed 2 times higher than that for as-grown films. CP-3 Effect of Dopants and Thermal Treatment on Properties of Ga- Al-ZnO Thin Films Fabricated by Hetero Targets Sputtering System, K.H. Kim (KHKim@kyungwon.ac.kr), Department of Electrical Engineering, Gachon University Republic of Korea, J.S. Hong, N. Matsushita, Materials and Structures Laboratory, Tokyo Institute of Technology, Japan, H.W. Choi, Department of Electrical Engineering, Gachon University, Korea For preparation of new material transparent electrode, we prepared the Ga and Al doped ZnO (Ga-Al-ZnO; GAZO) thin film under various conditions by using facing targets sputtering (FTS) system as function of input current and thermal treatment temperature. The FTS system can prepare the thin film using new materials because it uses two targets. Also, the substrate is located in a plasma-free area apart from the center of plasma so it can suppress high energy particles colliding to the substrate so high quality films can be prepared. The properties of the as-deposited GAZO thin films were then examined by 4-point prove, atomic force microscope (AFM), X-ray diffractometer (XRD), and field emission scanning electron microscope (FESEM) and UV-VIS spectrometer. As a result, the lowest sheet resistance of the films showed 59.3 ohm/sq and average transmittance about 90% in the visible range. And after thermal treatment, we could observe the more improved properties of GAZO thin film. The lowest sheet resistance (47.3ohm/sq) of the GAZO thin films were shown at thermal treatment temperature of 300˚C. It is considered that this is the result of continuous substitutions by dopants and improved crystalline by thermal treatment. CP-4 Ellipsometry Study of a Reactively Sputtered Transparent Conductive Oxide(TCO), G. Ding (gding@intermolecular.com), M. Le, F. Hassan, Z. Sun, M. Ngugen, Intermolecular Inc, US Sb-Sn oxide (ATO), a good TCO, thin film was reactively sputtered on a glass, and characterized as the Sb contents and annealing temperatures, by transmission, reflection, absorption, resistivity, film thickness, refractive index n and k, XRD, Hall probe and ellipsometer (300~1000nm). An ellipsometry method was developed to determine the ATO film carrier density and gradience. There are some reports on the resistivity evaluation based on the Drude model through ellipsometer measurements. However, the uniqueness of the model fitting is poor in many conditions, (many values could fit the model, so that no unique value could be precisely determined). In theory: Tauc-Lorentz and Drude could give good description of the band-gap and free carrier physics of the ellipsometry spectra. The reason of poor uniqueness value in model fitting lies in that the measurement data content is not enough to uniquely determine physical parameters; thus the simulation will face uniqueness issue for the solution. How to increase the measurement data content is a key to improve the uniqueness of the simulation. Multiple angles did not help much on this data content issue. The transmission and reflection spectra measurements were helpful at some cases. However, the uniqueness is still poor in many other cases in our ATO film study. Here we present a new method that combined resistivity measurement into modeling, instead of simulating resistivity ρ. Thus, this method increases measurement data content, so it significantly improved the uniqueness of the solution in the modeling; thus, through Drude model relationship, the carrier density and mobility of the ATO film could be uniquely determined. Drude model: the dielectric constant ε is function of resistivity ρ, scattering time τ i, and wavelength λ. Then electron density N and mobility μ could be calculated from ρ=m*/(Nq 2 τ) , if assumed m* is a constant (such as 0.3me) The gradience profile simulation is widely used for ellipsometry simulation, combined with the above method, the gradience of carrier density and mobility can be estimated, in comparison of Hall probe measurements, two methods provides similar carrier density and mobility, but the former one here could provide gradience information. In this study, a new method was developed to significantly improve the ellipsometry simulation uniqueness, so that the carrier density and mobility of the ATO film could be uniquely determined. The gradience information could be estimated, and presented. CP-5 Application-Specific Transparent Conductive Oxide Development using High Productivity Combinatorial Methods, M.A. Nguyen, M. Le (mle@intermolecular.com), Intermolecular Inc, US Transparent conductive oxides (TCO) have become crucial not only as contact layers in photovoltaic applications, but also in electrochromic devices, low emissivity glass for commercial buildings, TFT-LCD displays and touch panels, as well as in flexible PV applications. With new applications come new specifications, and the corresponding need to
simultaneously optimize materials properties for new parameters. Such parameters could include physical properties such as flexibility, or thermal properties such as emissivity. With increasing numbers of experiments needed to explore expanding process spaces, more efficient technologies and methodologies are needed to be able to develop new materials. Intermolecular Inc.’s (IM) High Productivity Combinatorial (HPC) Physical Vapor Deposition (PVD) platform is capable of screening up to 4 materials at a time. Co-sputtering of multiples sources (two to four) allows for an exponential numbers of site isolated experiments with unique composition to be deposited and characterized simultaneously. Five different material systems were explored at Intermolecular in less than a month: aluminum zinc oxide (AZO), indium tin oxide (ITO), indium zinc oxide (IZO), indium titanium oxide, and indium silicon oxide. HPC methods allowed for the discovery of a particular IZO composition range (between 5-15% of zinc oxide, 85-95% indium oxide) that shows resistivity comparable or slightly better than the ITO baseline at IM. However, the emissivity was measured to be 10% better while maintaining transparency levels similar to ITO at the same thicknesses. This improvement in emissivity makes IZO a very promising TCO material for low-E and electrochromic applications. IM’s baseline for ITO has resistivity of 350µΩ*cm and emissivity of 0.165 (16.5% of standard silver mirror). Unlike the crystallinity of ITO, IZO’s amorphous structure provides for a much more robust process window with good repeatability. The amorphous structure also makes IZO a well suited material for flexible PV applications. Another advantage of using multi source PVD chambers as part of a HPC workflow is the ability to deposit multi-layer TCOs. Stacks of TCO-Metal- TCO films (T-M-T) were explored using only 1 source for the TCO and 1 for the metal. Resistivity, emissivity, and transparency showed a strong correlation to the thickness of the metal layer in the T-M-T stack, as would be expected by theory. Preliminary data already indicated a 75% improvement in resistivity and 33% improvement in emissivity, though with a 23% reduction in transmittance compared to an ITO single layer film. CP-6 To Properties of Ga-Al doped ZnO films prepared on the polymer substrate, K.H. Kim, H.W. Choi, K.H. Kim (KHKim@kyungwon.ac.kr), Kyungwon University, Republic of Korea Transparent conductive oxides (TCOs) have been extensively studied because they are one of the most important components for large area electronics devices such as solar cells, organic light-emitting diode (OLED), optical sensors or touch screens. In recent years, there is much interest in the OLED applications like large scale display, flexible display and smart phone and so on. Indium oxide doped with tin (In2O3:Sn, ITO) is known for a most typical material for a transparent electrode. However, rare and expensive indium in ITO is also blocking the use of ITO. So it is necessary to find the substitute of ITO and zinc oxide is an excellent candidate. The group 3 elements (Al, Ga B and so on) doped zinc oxide is a promising TCO material for OLED anode because of its high thermal stability and chemical durability. The facing targets sputtering (FTS) system have been investigated in recently to prepare Ga-Al doped zinc oxide(GAZO) electrode for OLED because of large area uniform, high deposition rate, polymer substrate deposition and plasma damage free sputtering. The GAZO thin films were prepared on polyethersulfone(PES) substrate by Facing Target Sputtering (FTS) system. We investigated electrical, optical, and structural properties of GAZO thin film with sputtering power 17-86W at working pressure 3mTorr. The optical transmittance of GAZO thin films characters very high transmittance of 90% in the visible range. We obtained the lowest resistivity 14.1Χ10 -4 [Ω·㎝ ] at sputtering power 86W from the hall-effect measurement and the strong (002) peak at all deposited thin films from the X-ray Diffractometer (XRD). Deposition Parameter Sputtering Condition GAZO Target AZO 2wt.%, 1EA GZO 3wt.%, 1EA Tickness 150nm Base pressure 1.2 Χ 10 -6 Torr(1.3 Χ 10 -4 pa) Gas flow Ar : 10sccm Working pressure 3mTorr(0.39pa) Input Power : 17-86W Function (Input Current : 0.05-0.2A) Table 1. Parameter of GAZO films deposited on PES substrate CP-7 Charge trapping in indium zinc oxide thin film transistors with active channel fabricated by two-step deposition method, W. Kim, S.H. Lee, H.S. Uhm, J.S. Park (jinsp@hanyang.ac.kr), Hanyang University, Republic of Korea Recently, many oxide semiconductors as the active channel layer for transparent thin-film transistors (TFTs) and their electronic applications, such as drivers for organic light-emitting diodes and transparent displays have been investigated because of their excellent electrical and optical properties at room temperature. Among those, sputtering-produced amorphous indium-zinc-oxide (a-IZO) thin films exhibit high electron mobility even when they are deposited at room temperature. Also, they can be used both as a channel layer and as source/drain layers of TFTs. Up to recent dates, most of researches have mainly been focused on developing the fabrication method of a-IZO TFTs or improving the device performances, however, the electrical instability including the drain currentgate bias hysteresis should be considered for practical applications. If there is a large hysteresis in TFT devices, non-uniform brightness or flickering phenomenon will occur in driving the liquid crystal display. Generally, the voltage shift (ΔVth) due to hysteresis of TFTs suggests that negative charge carriers are trapped at the channel/gate oxide interface or injected into the dielectric from the oxide channels. It is also known that metal ion vacancies of channel layer in oxide TFTs may act as charge trapping centers to cause the hysteresis. As for a-IZO TFTs, however, there have been scattered data in the literature and the exact mechanism responsible for the hysteresis phenomenon has not been clear yet. In this study, we have investigated the hysteresis mechanism in a-IZO TFTs with the active channel consisting of two a-IZO thin layers (hereafter, referred to as “two-step a-IZO TFT”). The TFTs were fabricated with a bottom gate structure and the a-IZO channel layers were deposited on thermally oxidized Si substrates (gate) via RF sputtering by following the two-step deposition procedures. The 1 st a-IZO layer was deposited at a relatively low oxygen partial pressure (i.e., O2/Ar < 5 %) and the 2 nd a-IZO deposition was accompanied without stopping the vacuum, only by increasing the oxygen partial pressure (i.e., O2/Ar > 10 %). The forward and reverse sweep characteristics of the both of two-step and monolayer a-IZO TFTs were measured in the dark using a semiconductor parameter analyzer at room temperature. Capacitance-voltage characteristic of a-IZO TFTs were measured using an impedance analyzer. In addition, the time dependent electrical properties of a-IZO TFTs were measured. The experimental results showed that the voltage shift due to hysteresis could be significantly suppressed in two-step a-IZO TFTs as compared with conventional single-channel a-IZO TFTs. CP-8 Fabrication and characterization of transparent thin film transistors with boron-doped silicon zinc oxide channel, H.S. Uhm, S.H. Lee, W. Kim, J.S. Park (jinsp@hanyang.ac.kr), Hanyang University, Republic of Korea Zinc oxide (ZnO)-based semiconductors as the active channel layer for thin film transistors (TFTs) recently have attracted much attention due to their excellent characteristics such as higher mobility than amorphous silicon, the ability to perform room-temperature deposition, and high transparency. However, most of the successful ZnO-based TFTs incorporate indium and gallium, such as indium zinc oxide (IZO), indium zinc tin oxide (IZTO), and indium gallium zinc oxide (IGZO), which are relatively rare on Earth. This makes those technologies easily subject to a material shortage. Recently, some researchers have reported experimental results which demonstrate new indium and gallium-free oxide semiconductors, such as aluminum zinc tin oxide (AZTO), magnesium zinc oxide (MZO), and titanium oxide (TiOx), as another alternative channel layer for oxide TFTs. In this study, we suggest a novel transparent oxide TFT with boron-doped silicon zinc oxide (SZO:B) channel layer. It is believed that group III (such as B, Al, Ga, In) and IV (such as Si, Ge, Ti, Zr, Hf) elements act as effective donors in the ZnO lattice because they may be substitutionally placed on Zn sites and will then enhance the carrier concentration and conductivity. We have investigated a simple method to simultaneously incorporate both boron and silicon elements in the ZnO thin film. The SZO:B TFTs were fabricated with a bottom gate structure. An n-type Si (100) wafer with a low resistance (below 0.002 Ωcm) was used as a gate electrode, and a gate insulating layer was formed by thermally oxidizing the Si substrate . Then, the SZO:B channel layer was deposited via RF magnetron sputter at room temperature, using a ZnO target (99.999 % purity, 4 inch diameter) attached by several Si chips (boron-doped p-type Si wafer with a resistivity of 10 Ωcm) . Because Si chips were located uniformly around the sputtering racetrack, the boron and silicon elements were properly included in the ZnO lattice. As a result, the SZO:B channel layer was successfully deposited on a gate insulating layer. Finally, aluminum (Al) layer was deposited via DC magnetron sputter followed by a lift-off process to form the source-drain electrodes. The electrical, structural, and optical characteristics of SZO:B thin films were evaluated by four-point probe, X-ray diffraction (XRD) and UV/visible 105 Thursday Afternoon Poster Sessions
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I C M C T F 2 0 1 2 INTERNATIONAL C
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TABLE OF CONTENTS Welcoming Remarks
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2012 ICMCTF SCHEDULE OF EVENTS DAY
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SYMPOSIUM A Coatings for Use at Hig
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Marco Cremona Pontificia Universida
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Exhibitor Keynote Lecture Tuesday,
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2011/12, discuss ideas and prioriti
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At the focus topic, from the experi
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2012 R.F. Bunshah Annual Award & IC
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ICMCTF 2012 Graduate Student Awards
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ICMCTF 2012 thanks Plansee for thei
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ICMCTF 2012 thanks AJA Internationa
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ICMCTF 2012 thanks CemeCon for thei
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ICMCTF 2012 Short Courses April 22
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ICMCTF 2012 Planning Grid We provid
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Key to Session/Paper Numbers A Coat
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Monday Morning, April 23, 2012 Fund
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New Horizons in Coatings and Thin F
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Fundamentals and Technology of Mult
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Advanced Characterization of Coatin
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Hard Coatings and Vapor Deposition
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Tribology & Mechanical Behavior of
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Coatings for Use at High Temperatur
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Applications, Manufacturing, and Eq
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Wednesday Afternoon, April 25, 2012
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Thursday Afternoon Poster Sessions
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Free Caricatures & Massages!! E-1 V
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ICMCTF 2012 EXHIBIT HALL Internatio
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I C M C T F 2012 S P O N S O R S Bo
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All in Good Measure A 24 µm scan o
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Call For Abstracts Deadline: MAY 2,
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CC800 ® /9 HIPIMS true integration
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Exhibit Hall Reception - Atlas Ball
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Kaufman & Robinson announces their
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Miba Coating Group is the specialis
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PLANSEE SE, 6600 Reutte, Austria, T
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� ��
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Plenary Talk Room: Golden Ballroom
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content. Analyses of the oxidised c
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- The control on the gradient in re
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μ = 0.4 to μ = 0.9). On the other
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application tests the ta-C coated d
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4:10pm C2-2/F4-2-10 Investigation o
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process with surfactant on WO3/ITO
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is already reported. To further com
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conditions. The details of the comp
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esidual stress and to the Poisson
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eactive gases with the target mater
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emerging fields. State-of-the-art t
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transparent conducting layers. Howe
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methods provide similar carrier den
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of AISI 52100 steels by developing
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deposition based on high power puls
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coatings removed from the aluminum
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spectroscopy varies from 25 at% to
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This article describes how to use s
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een demonstrated both theoretically
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Furthermore, the silane coupling ag
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10:40am A1-1-9 High temperature oxi
Page 153 and 154: 10:40am B4-2-10 Understanding the d
Page 155 and 156: 11:00am B5-1-10 Hard nanocrystallin
Page 157 and 158: * Sandia National Laboratories is a
Page 159 and 160: fluidized bed of tin, zinc and alum
Page 161 and 162: Coatings for Use at High Temperatur
Page 163 and 164: mechanical and chemical properties.
Page 165 and 166: duration for super-low friction see
Page 167 and 168: stainless steel DIN X42Cr13 surface
Page 169 and 170: 2:30pm TS1-1-3 Surface engineering
Page 171 and 172: Coatings for Use at High Temperatur
Page 173 and 174: Hard Coatings and Vapor Deposition
Page 175 and 176: X-ray diffraction patterns of the Z
Page 177 and 178: 11:20am B6-1-11 Direct current magn
Page 179 and 180: loading situations could help to ob
Page 181 and 182: Energetic Materials and Micro-Struc
Page 183 and 184: The present work was supported by t
Page 185 and 186: silica-based hydrophilic coatings i
Page 187 and 188: extent depending on the actual grow
Page 189 and 190: [1] F. Tasnádi, B. Alling, C. Hög
Page 191 and 192: eproducibility of the preparation o
Page 193 and 194: showed by the uncoated 4140 steel s
Page 195 and 196: polarization resistance and corrosi
Page 197 and 198: thin films in which a multiscale mo
Page 199 and 200: centers, ascribed to conduction ele
Page 201 and 202: BP-26 Characterization of laser abl
Page 203: BP-38 Stress signature of an amorph
Page 207 and 208: CP-17 Effects of UV Light Treatment
Page 209 and 210: amorphous structure with a smooth s
Page 211 and 212: addition, it was observed that the
Page 213 and 214: EP-5 The effective Indenter concept
Page 215 and 216: the substrates directly or after ra
Page 217 and 218: as-grown films using textured Si as
Page 219 and 220: proposed memory device exhibits exc
Page 221 and 222: FP-24 Effect of hydrogen addition o
Page 223 and 224: oxide obtained was correlated to th
Page 225 and 226: Post Deadline Discoveries and Innov
Page 227 and 228: chemical bonds have also been achie
Page 229 and 230: 9:40am B3-1-6 Compressive stress ge
Page 231 and 232: 10:20am D2-1-8 Corrosion Resistance
Page 233 and 234: property combination is attractive
Page 235 and 236: PVD is a challenging task. The pres
Page 237 and 238: Chang, G.W.: C2-3/F4-3-3, 29; GP-3,
Page 239 and 240: Huang, K.H.: BP-33, 102 Huang, P.H.
Page 241 and 242: Moody, N.R.: F6-1-1, 7 Moon, S.: D1
Page 243 and 244: Szeremley, D.: G3-1-7, 68 Szesz, E.
Page 245 and 246: NOTES 145
Page 247 and 248: Description of Research Highlights:
Page 249 and 250: their presentations in order to eva
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