ICMCTF 2012! - CD-Lab Application Oriented Coating Development

spectrophotometer, respectively. Moreover, to analyze the device
characteristics of the SZO:B TFTs, the output and transfer current-voltage
characteristics were measured using a semiconductor parameter analyzer
(4200-SCS, Keithley).
CP-9 Investigation on High-Performance Aluminum Zinc Tin Oxide
Thin Film Transistors, L.F. Teng, P.T. Liu (ptliu@mail.nctu.edu.tw), C.S.
Fuh, National Chiao Tung University, Taiwan, Z.Z. Li, Ming-Hsin
University of Science and Technology,Taiwan
In recent years, amorphous oxide semiconductors (AOSs) are attracted
much attention due to high mobility, low temperature deposition, suitable
for flexible display, transmission, and good uniformity. The thin film
transistors with a-AZTO thin film as the active layer perform higher
mobility and better reliability than conventional hydrogenated amorphous
silicon TFT (a-Si: H TFT). In addition, the uniformity of a-AZTO TFT is
also superior to Low Temperature Polycrystalline Silicon TFT (LTPS TFT).
Therefore, the a-AZTO TFT s have the potential to replace a-Si: H TFTs
and LTPS TFTs for Active Matrix Organic Light Emitting Display
(AMOLED). In this study, we used rf sputter, which is compatible with
industry application and integration, deposit a-AZTO active layer and then
modulated the different processing oxygen flux, and discussed electrical
and optical properties of the device impact.
CP-10 A Magnetization Study of Cobalt Oxide Films Deposited at
Different Temperatures by Pulsed Injection MOCVD Using a β-
Diketonate Complex of Cobalt as the Precursor, L. Apatiga
(apatiga@unam.mx), J. Espindola, N. Mendez, Universidad Nacional
Autónoma de México - Centro de Fisica Aplicada y Tecnología Avanzada,
Mexico
The magnetic response of cobalt oxide films was studied using a vibrating
sample magnetometer system. A strong magnetic susceptibility, which
corresponds to antiferromagnetic spin alignments typical of films with low
chemical inhomogeneities was found. The films were deposited by pulsed
injection MOCVD using a β-diketonate complex of cobalt mixed in a
toluene solution as the precursor, at different temperatures ranging from 650
to 800 °C on silicon substrates (Si (100)). According to the x- ray studies,
the Co3O2 phase was homogeneously deposited along the entire substrate. In
addition, the SEM observations show, together with the FT Raman studies,
a high crystallinity, characteristic of the CVD metallic oxide structures.
CP-11 Investigating the Illuminated Hot-Carrier Effect under DC and
AC operations for InGaZnO Thin-Film Transistors, T.Y. Hsieh, T.C.
Chang (tcchang@mail.phys.nsysu.edu.tw), T.C. Chen, M.Y. Tsai, Y.T. Chen,
National Sun Yat-Sen University, Taiwan, F.Y. Jian, National Chiao Tung
University, Taiwan
This paper investigates the effect of DC and AC hot-carrier stress under
light illumination for amorphous InGaZnO thin-film transistors (TFTs).
Drain current-gate voltage (ID-VG) as well as capacitance-voltage (C-V)
measurements are utilized to analyze the degradation mechanism.
Illuminated DC hot-carrier stress leads to not only a negative parallel shift
but also a C-V curve distortion at the off-state. This can be attributed to the
asymmetric hole-trapping effect induced barrier-lowering near the drain
side. To further verify the origin of the degradation behavior, AC bias with
identical stress voltage is instead imposed on either gate terminal or drain
terminal. It is deduced that hole-trapping phenomenon near the drain is
dominated by the voltage across gate and drain, and is responsible for the
degradation mechanism under illuminated hot-carrier stress.
CP-12 High Supercapacitive Performance of Sol-Gel ZnO-Added
Manganese Oxide Coatings, C.-Y. Chen (chencyi@fcu.edu.tw), C.-Y.
Chiang, Feng Chia University, Taiwan, S.-J. Shih, National Taiwan
University of Science and Technology, Taiwan, C.Y. Tsay, C.K. Lin, Feng
Chia University, Taiwan
In the present study, ZnO-added manganese (Mn) oxide coating were
prepared as a function of ZnO addition (≤ 40 at.%) by sol-gel process. After
post heat treatment at 300 °C, the influences of ZnO addition on the
microstructural characteristics and pseudocapacitive performance of the
Mn-oxide films were investigated. The structural analyses identified the solgel
ZnO-added Mn-oxide powder as a tetragonal Mn3O4 phase with a
nanocrystalline structure. The formation of spinel ZnxMn3-xO4 occurred
when ZnO addition was ≥ 20 at.%. The crystallite size of Mn-oxide powder
increased when a small amount of ZnO was added, then decreased with
increased the ZnO content. The cyclic voltammetry (CV) data showed that
the specific capacitance (SC) of the Mn-oxide film in 1 M Na2SO4
electrolyte can be increased from 236 F/g to 301 F/g at 25 mV/s by adding
with 10 at.% ZnO. The formation of spinel phase tended to inhibit the SC
value of the films. After activation of the Mn-oxide film, however, a
relatively high cycling efficiency of > 85% was obtained for all the
compositions after 1200 CV cycles.
Thursday Afternoon Poster Sessions 106
CP-13 Characterization of dye sensitized solar cells with growth of
ZnO passivating layer by Electron-beam evaporation, S.W. Rhee, K.H.
Kim, H.W. Choi (chw@kyungwon.ac.kr), Kyungwon University, Republic
of Korea
Dye-sensitized solar cells have been studied intensively since the discovery
of DSSCs in 1991, has paved the way to cell efficiency as high as 11%,
allowing to foresee the possibility of obtaining cost efficient cells.[1] In this
study, ZnO thin film have been growth on FTO glass which used for dye
sensitized solar cells(DSSC) by electron-beam evaporation. While a great
number of various deposition techniques were reported for Zinc
Oxide(ZnO) thin films, e.g. R.F and D.C. sputtering, pulsed laser
deposition, metal organic chemical vapor deposition, and others. most of the
ZnO active layers in TFT have been deposited by physical vapor deposition
methods.
Electron was caused in N-719 and get through photoelectron (TiO2) and
TCO. Electron loss occurs at each interface. Specially, TiO2 electrode on
FTO. Fig.1 show the various components of a DSSC. It is also shows the
process flow of occurred electron in dye, and electron recombination in
TiO2 to FTO interface. One of the reason deposition ZnO passivating layer
can prevent recombination effectively. In addition the interfacial contact
properties between the semiconductor metal oxide layer and the transparent
conducting oxide (TCO) have been considered to play a significant role in
the enhancement of the photovoltaic performance of DSSCs. In theory, ZnO
has wide band gap (larger than 3eV) also excellent electron collecting
capability and mobility[2]. ZnO passivating layer at room temperature and
the chamber pressure was kept below 5 10 6 torr at different atmosphere O2
gas flow. Electron-beam voltage was 8kv. The crystal structure and
morphology were observed by X-ray diffraction (XRD) and scanning
electron microscopy (SEM), The transmittance of the film was examined
using a UV-spectrometer. The conversion efficiency of the DSSC fabricated
was measured using I-V solar stimulator.
CP-15 Preparation of ZnyCd1-yS thin film by chemical bath deposition
and application for dye-sensitized solar cell, C.C. Chang, Institute of
Physics, Academia Sinica, Nankang, Taiwan, C.S. Hsu, Feng Chia
University, Taiwan, C.H. Hsu, M.K. Wu, Institute of Physics, Academia
Sinica, Nankang, Taiwan, C.C. Chan (ccchan@fcu.edu.tw), Feng Chia
University, Taiwan
In the present study, ZnyCd1-yS thin film was coated on the ITO glass with
chemical bath deposition method, using zinc acetate and cadmium acetate
as precursors. Dye-sensitized solar cell was prepared from the ZnyCd1-yS
/ITO glass with Anthocyanin, which was extracted from the grape skin, as a
dye. Pt-sputtered ITO glass was used as the counter electrode. The
influences of zinc/cadmium ratio and reaction time on the performance of
the prepared dye-sensitized solar cell were discussed. FESEM was used to
characterize the surface microstructure and sectional thickness of the
ZnyCd1-yS film . The absorption spectra of the ZnyCd1-yS film and
Anthocyanin dye were recorded using UV-VIS spectrophotometer . The
characteristic of the Anthocyanin dye was also analyzed by FTIR
spectrophotometer. Photocurrent-voltage (I-V) measurements were
performed using an electrochemical analyzer. According to the UV-VIS
results, Anthocyanin dye has a significant absorption band within the
wavelength of 400~700nm, which can enhance the visible light absorption
of the ZnyCd1-yS film. The results that the dye-sensitized solar cell prepared
from the Zn0.2Cd0.8S film exhibited the best performance. The open-circuit
voltage, short-circuit current, and photo-to-electron power conversion
efficiency are 0.695V, 1.408mA, and 4.07%, respectively.
CP-16 Effect of Thermal Treatment on Physical and Electrical
Properties of porogen-containing and porogen-free ultralow-k plasmaenhanced
chemical vapor deposition dielectrics, W.Y. Chung, National
Chi-Nan University, Taiwan, Y.M. Chang, J.I.M. Leu, National Chiao Tung
University, Taiwan, T.J. Chiu, Y.L. Cheng (yjcheng@ncnu.edu.tw),
National Chi-Nan University, Taiwan
The effect of the thermal annealing on the physical and electrical properties
of porogen-containing and porogen-free ultralow-k dielectrics prepared by
plasma-enhanced chemical vapor deposition (PECVD) was investigated.
The porogen-free ultralow-k dielectric is obtained by using UV curing
process to remove the organic sacrificial phase and generate open porosity.
The results are also compared with the PECVD porogen-containing low-k
films without UV curing process and PECVD low-k dielectrics without
containing organic sacrificial phase. All low-k films in this study are totally
deteriorated after >800 o C thermal annealing. As the annealing temperature
below 700 o C, low-k dielectrics without containing organic sacrificial phase
remain stable. The microstructure of the ultralow-k dielectrics changes with
the thermal annealing. However, two kinds of ultralow-k dielectrics after the
thermal annealing show the different physical and electrical characteristics.
The porogen-containing low-k films without UV curing can produce more
pore after the thermal annealing, resulting in the worse electrical
performance as compared to the porogen-free ultralow-k dielectrics.