ICMCTF 2012! - CD-Lab Application Oriented Coating Development

More documents

Recommendations

Info

diagnosis of cancers, using the superior properties of CNTs such as chemical stability, thermal conductivity, mechanical strength, and structural aspect ratio. For use of CNT-emitters as electron source for x-ray generation, a large number of investigations have been focused on how to enhance the emission current level and to reduce the turn-on field for electron-emission. Especially, to obtain high-resolution x-ray images, the diameter of the beam incident area must be tens of micrometers or less when the electron beam emitted from the CNT cold cathode collides against the x-ray generation target. For this purpose, some researchers have recently developed CNT emitters by growing them on very sharp tip-type substrate. In these tip-type CNT emitters, however, the long-term emission stability should be ensured due to a relatively low bonding force between the CNT and the substrate. In order to achieve desirable performances in emission current and stability, coating of CNTs with various materials, such as metal carbides like titanium carbide (TiC), metal nitrides like boron nitrides (BN), and metal oxides including magnesium oxide (MgO), have been studied. In this work, the effects of coating of lithium (Li) thin layers with various thicknesses have been investigated for the purpose of enhancing the electron-emission current and the long-term stability of CNT-emitters. The CNTs were grown on metal-tip (tungsten, approximately 500 nm in diameter at the summit part) substrates via electrophoretic deposition (EPD). The Li layers were coated on CNTs using an electroplating method. The morphologies, microstructures, and chemical compositions of the Licoated CNTs were analyzed as a function of the thickness of the Li layer. For all the fabricated Li-coated CNT-emitters, the electron-emission characteristic and the long-term (up to 20 h) stability of the emission current were measured, which were also compared with those of the conventional non-coated CNT-emitter. The experimental results showed that the electronemission capacity was noticeably enhanced by coating Li layers on the surface of CNTs. This was attributed to the fact that the effective work function of CNTs was reduced by Li coating. It was also observed that the Li-coated CNT-emitters exhibited a more stable electron-emission characteristic than that of the non-coated one. FP-9 Electron emission properties of carbon nanotubes grown on polymer substrates with high absorbency, B.J. Kim, H.B. Chang, J.S. Park (jinsp@hanyang.ac.kr), Hanyang University, Republic of Korea Carbon nanotubes (CNTs) have much attraction for high-current density applications because of their superior properties, such as chemical stability, thermal conductivity, mechanical strength, and structural aspect ratio. Among the many promising applications of CNTs, the electron emitted source of cold cathode for miniature x-ray system is that which can be most immediately realized because CNT-based cold cathodes could overcome many problems with conventional thermionic cathodes, such as limited temporal resolution, a short lifetime, a high operating cost, and restricted miniaturization. Currently, in order to use CNTs as electron sources, many investigations have been focused on how to enhance the emission current level and to reduce the turn-on field for electron-emission. The CNT-based field emitters have been fabricated either by direct growth methods like chemical vapour deposition (CVD) or by indirect printing methods, with various types of substrates such as pin-type or flat type. In general, the pintype substrates have some advantages for obtaining high resolution of emitted electron beams, but they are hard to meet the current level required for x-ray generation. On the other hand, the flat-type substrates may produce sufficient currents, but they have poor adhesion between the CNTs and the substrates due to the weak van der Waals force. In this study, we present a novel method for fabricating CNT-based field emitters with high emission current level by using flat-type polymer substrates (such as cellulose and polyester) with high absorbency. The CNTs were grown using a dip-coating method by dipping the substrates in the CNT suspension. The CNTs attached on the substrates formed covalent and hydrogen bonds with the polymer surface that has hydrophilic groups (i.e., OH - ) after acid purification of CNTs. The morphologies and microstructures of polymer substrates and CNTs were monitored via fieldemission scanning electron microscopy (FESEM) and high-resolution transmission microscopy (HRTEM). Fourier transform infrared spectroscopy (FTIR) was used to identify the covalent and hydrogen bonds between CNTs and substrates. These analyses indicated that the polymer substrate was chemically combined with a large number of CNTs with a strong adhesion. The electron emission properties of the fabricated CNT emitters were also measured at a pressure of below 10 -5 Pa, with a distance of 1mm between the cathode (CNTs) and the anode. The results showed that the CNT emitters fabricated with the polymer substrates produced more than 1 mA at 1 V/µm of applied field. FP-10 Structure and Electronic Properties of Sputter-Deposited LiFePO4 Thin Films, V. Ramana (rvchintalapalle@utep.edu), M. Mares, G. Baghmar, University of Texas at El Paso, US The successful commercialization of lithium ion batteries for electronics, automobiles, and technology has led to many research groups to invest Thursday Afternoon Poster Sessions 118 considerable amount of money in this battery technology that utilizes LiCoO2, LiNiO2, and LiMnO2 cathodes. However, lower cost cathode materials are required for various applications. In addition, these materials limit the applications to small batteries due to the high cost, toxicity, and environmental harmful of the materials. LiFePO4 has received significant attention and commercialized as a cathode for Li-ion batteries. The exceptional stability of LiFePO4 at elevated temperatures enables safe, large lithium ion batteries for large scale applications such as electric vehicles or space applications. The present work was performed to understand the effect of temperature, an important thermodynamic variable, on the microstructure and electronic properties of LiFePO4 films fabricated by radio-frequency (RF) magnetron sputtering. LiFePO4 films were grown under varying deposition temperatures in the range of 25 to 400 °C. In addition, LiFePO4 films were annealed in temperature ranges of 400 to 800 °C for 1 and 2 hours. The effect of growth temperature on the crystal structure, surface morphology, chemical quality and electronic properties is investigated in detail. Characterizations of the films were performed using X-ray diffraction (XRD), high resolution scanning electron microscopy (HRSEM), energy dispersive X-ray spectrometry (EDS), optical spectrophotometer, and electrical resistivity measurements. The grain size increased as the annealing temperature increased from 400 to 800 °C. The optical properties of the LiFePO4 films indicate that, as the growth temperature is increased, the transmittance of the films increases. The band gap increases from 2.75 eV to 3.28 eV with increasing temperature from RT- 400 °C. When the films were annealing at 1 hour form 400-800 °C, the band gap increased from 3.12 eV to 3.7 eV. Annealing for 2 hours at temperatures from 400 to 800 °C showed an increase in band gap 3.12 eV to 3.75 eV showing the maximum value at 600 °C. The electrical condcutivity indicates that with an increase in substrate temperature, the resistivity of the films also increases. The results will be presented and discussed. FP-11 <strong>Development</strong> of thin film cathodes for lithium-ion batteries in the materials system Li-Mn-O by r.f. magnetron sputtering, J. Fischer (Julian.Fischer@kit.edu), C. Ziebert, C. Adelhelm, J. Ye, M. Rinke, J. Desaigues, M. Stüber, S. Ulrich, H. Seifert, Kit, Iam-Awp, Germany In the last years there has been an increasing interest in electrical energy storage. The requirements of the industry are clear and unambiguous: the storage solutions should be powerful, compact and save. All these properties can be achieved with thin film lithium ion technology. The research on cathode materials plays a key role because the performance of a lithium ion cell is mostly limited by its cathode. Today the most commercially available lithium ion batteries are still based on the toxic and expensive LiCoO2 as standard cathode material. Cheaper and environmentally friendlier are lithium manganese based cathode materials. In this work LiMn2O4 spinel and orthorhombic LiMnO2 thin films have been prepared by non-reactive r.f. magnetron sputtering from commercial ceramic LiMn2O4- and LiMnO2-targets in a pure argon discharge. The deposition parameters target power and working gas pressure were optimized in combination with a post deposition furnace annealing with respect to microstructure and electrochemical behavior. The chemical composition was determined using inductive coupled plasma optical emission spectroscopy (ICP-OES) and inert gas fusion analysis (IGFA) and the results were compared with laser ablation mass spectroscopy (LA-MS) and high frequency glow discharge optical emission spectroscopy (HF- GDOES). The films crystal structure, phase evolution and microstructure were investigated by X-ray techniques, micro Raman spectroscopy and scanning electron microscope (SEM). Due to the fact that these thin films consist of the pure active material without impurities like binders or conductive additives like carbon black, they are particularly well suited for measurements of the pure intrinsic physical properties. The electrochemical behavior of these films was investigated by galvanostatic methods in lithium half cells with a standard EC:DMC (1:1) liquid electrolyte containing 1 mol LiPF6. Both the influence of the charging and discharging currents and of the voltage window was investigated. To get a deeper insight into the electrochemical reactions cyclic voltammetry was carried out. Finally both materials will be compared and some ideas for structural improvements will be given. FP-12 The resistive switching characteristics in TaON films for nonvolatile memory applications, M.C. Chen (iro926@gmail.com), T.C. Chang, National Sun Yat-Sen University, Taiwan, Y.C. Chiu, National Chiao Tung University, Taiwan, S.C. Chen, National Tsing Hua University, Taiwan, S.Y. Huang, National Sun Yat-Sen University, Taiwan, S. Sze, National Chiao Tung University, Taiwan, F.S. Yeh(Huang), National Tsing Hua University, Taiwan, M.J. Tsai, Indian Institute of Science Bangalore, India In this study, the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device based on sputter–deposited TaON thin film was investigated. The resistive switching behavior of the Pt/TaON/TiN structure can be traced by dc voltage and pulse voltage. The
proposed memory device exhibits excellent resistance switching with a high resistance state/ low resistance state ration of 2.5 order, write/erase endurance of about 2 order, and long retention time of 10 4 s at 85 �. In addition, the device was investigated to achieve multilevel operation, which could increase storage density for next generation memory application. It was also found that the polarity of the forming process would not influence the resistive switching characteristic but influence the first reset process behavior. The switching behavior could be regarded as the oxygen redox near the TiN interface. However, the first reset behavior of negative forming process was related with the oxygen concentration gradients near the Pt electrode and the Joule heating enhanced oxidation. FP-13 Switching mechanism transition induced by annealing treatment in ZnO/Ru/ZnO resistive memory, L.C. Chang (lcchang@mail.mcut.edu.tw), Y.H. Wei, Ming Chi University of Technology, Taiwan, K.H. Liu, Chang Gung University, Taiwan ZnO/Ru/ZnO trilayer films sandwiched between Ru electrodes were prepared for nonvolatile resistive memory applications. These structures show resistance switching under electrical bias both before and after a rapid thermal annealing treatment, while it is found that the resistive switching effects in the two cases exhibit distinct characteristics. The ZnO devices after RTA treatment demonstrates remarkable device parameter improvements including lower threshold voltages and lower write current. Furthermore, the RTA treatment has triggered a switching mechanism transition from a carrier trapping/de-trapping type to an electrochemicalredox-reaction-controlled conductive filament formation/rupture process, as indicated by different features in current-voltage characteristics. FP-14 Bismuth Oxide thin films grown by RF reactive magnetron sputtering, P. Lunca Popa, P. Eklund (perek@ifm.liu.se), Linköping University, Sweden Bismuth oxide has five known crystalline phases: alpha, beta, gamma, delta and omega, each with its distinct properties and stability domains. The delta phase exhibits ionic conductivity 1-2 orders of magnitude higher than yttriastabilized zirconia, the compound widely used in solid oxide fuel cells. In bulk, the delta-Bi2O3 phase is not stable at room temperature but from 750 C to 825 C, the melting point of bismuth oxide. Outside this temperature range, other phases are stable but their conductivities are up to three orders of magnitude lower than that of the delta phase. The stability of the delta phase stability can be extended to lower temperatures by doping, but this process yields a severe reduction in ionic conductivity. In the present work, we have synthesized Bi2O3 films by RF reactive magnetron sputtering using a Bismuth target in an Ar/O2 gas discharge. We investigate how the structure of the films is influenced by substrate temperature, source power, and oxygen flow rate/total gas flow rate ratio. As expected, the substrate temperature influences the initial nucleation process and growth kinetics. Deposition at ambient temperature yields mainly amorphous films while higher temperature yields crystalline films. Different stoichiometric compositions can be obtained by varying the source power and the oxygen flow ratio. By tuning all these parameters we obtain Bi2O3 with cubic structure, with thickness of hundreds of nanometers. XRD shows crystalline films with peaks around 27 and 55 two theta degrees corresponding to (111) and (222) planes for cubic structure. Pole figures XRD analysis was also performed for those peaks and diffractions rings were observed near phi angle of 70 degree which corresponds to the angle between (1 1 1) and (1 1 -1) planes in a cubic structure, consistent with the delta phase. SEM showed a columnar structure of our films with very good uniformity of the films. Electrical and optical measurements have also been performed; ellipsometry yields a value of the band gap around 2.5eV while for optical constants values of n≈2.5 and k≈0.5 are obtained for UV-Vis wavelength interval. FP-15 Electromechanical reliability of ITO-coated polymer substrates after exposure to acrylic acid, K. Burrows, University of Birmingham, UK, A. Hoover, D. Cairns, K. Sierros, West Virginia University, US, S. Kukureka (s.n.kukureka@bham.ac.uk), University of Birmingham, UK This paper considers the electromechanical reliability of ITO-coated polymer substrates, for use in flexible display applications, after exposure to acrylic acid (a common constituent of display structures). Due to the mechanical mismatch of properties between the organic polymer substrate and the inorganic transparent conducting oxide, it is important to investigate the electro-mechanical response to a number of stresses commonly seen in general use. Three films of varying ITO thicknesses were examined: sheet resistance and optical transmission were monitored and tensile testing performed before and after exposure to acrylic acid. Also the tribological properties of the coated films were examined under a specially-modified fretting rig. It appears that even low concentrations of acrylic acid that would often go unnoticed, may cause failure to occur more readily. In both tensile testing and the monotonic bending test where the film is subjected to tension, high concentrations of acrylic acid would normally be a cause of failure. Nevertheless, even low concentrations such as 0.1M can also cause the critical onset strain to occur more readily due to stress-corrosion cracking. However when the films are subjected to stresses in compression, the exposure to acrylic acid shows little or no effect. FP-16 Observation of amorphous to crystalline phase transformation in Te substituted Sn-Sb-Se chalcogenide thin films for memory applications, R. Chander (rcohri@yahoo.com), R. Thangaraj, GNDU, India Thin films of Sn Sb Se Te (x = 10, 12, 14) chalcogenide system were prepared by thermal evaporation technique using melt quenched bulk samples. The as-prepared thin films were found amorphous as evidenced from X-ray diffraction studies. Resistivity measurement showed an exponential decrease with temperature upto critical temperature (transition temperature) beyond which a sharp decrease was observed and with further increase in temperature showed an exponential decrease in resistivity with different activation energy. The transition temperature showed a decreasing trend with tellurium content in the sample. The resistivity measurement during cooling run showed no abrupt change in resistivity. The resistivity measurements of annealed films did not show any abrupt change revealing the structural transformation occurring in the material. The transition width showed an increase with tellurium content in the sample. The resistivity ratio showed two order of magnitude improvements for sample with higher tellurium content. The observed transition temperature in this system was found quite less than already commercialized Ge Sb Te system for optical and electronic memories. FP-17 Investigating the degradation behavior under Hot Carrier Stress for InGaZnO TFT with symmetric and asymmetric structure, M.Y. Tsai (baxiatwice@yahoo.com.tw), NSYSU, Taiwan This letter studies the hot-carrier effect in indium–gallium–zinc oxide (IGZO) thin film transistors with symmetric and asymmetric source/drain structures. The different degradation behaviors after hot carrier stress in symmetric and asymmetric source/drain device indicate that different mechanisms dominate the degradation. Since the C-V measurement is highly sensitive to the trap state compared with the I-V characteristics, thus, the C-V curves are utilized to analyze the hot carrier stress induced trap state generation. Furthermore, the asymmetric C-V measurements (gate-todrain capacitance, gate-to-source capacitance) are useful to analyze the trap state location. For asymmetric device structure, different source/drain structure under hot carrier stress will induce asymmetric electrical field and cause different degradation behaviors. In this work, the on-current and subthreshold swing (S.S) degrade under low electrical field, whereas the apparent Vt shift occurs under large electrical field. The different degradation behavior indicates that the trap state generates under low electrical field and channel-hot-electron (CHE) effect occurs under large electrical field. FP-18 Investigating the Drain Bias stress of InGaZnO TFTs under Dark and Light Illumination for AMOLED application, S.Y. Huang (aramis88888@gmail.com), T.C. Chang, L.W. Lin, M.C. Yang, National Sun Yat-Sen University, Taiwan, K.H. Yang, University of Toronto, Canada, M.H. Wu, M.C. Chen, National Sun Yat-Sen University, Taiwan, F.Y. Jian, National Tsing Hua University, Taiwan The degradation mechanism of the drain bias stress for a-IGZO TFT under dark and light illumination are investigated in this paper. The current crowding effect, on current decreased of current-voltage, and a stretch-out of capacitance-voltage indicate that an additional barrier increased near the drain region by the oxygen molecules adsorbed model after the drain-bias stress under the dark (DBS) . This result induces the carrier transport is impeded from source terminal to drain terminal. In addition, the recovery characteristics show that all degradation behaviors significant disappear, which can be regarded as the O2 desorption from the active back channel. However, the unusual stretch-out phenomenon for the subthreshold capacitance after the drain bias stress under light illumination (DBIS) can not recover to the initial in the dark. This is attributed to the additional fix charge generated near the drain region by the photo-leakage current. Furthermore, an obvious negative threshold voltage shift after the DBIS indicates the charge trapping mechanism simultaneously occurred. Finally, this work also employs the gate and source floating conditions during the DBIS to further clarify the mechanism of degradation behaviors. 119 Thursday Afternoon Poster Sessions
Page 1 and 2:
I C M C T F 2 0 1 2 INTERNATIONAL C
Page 3 and 4:
TABLE OF CONTENTS Welcoming Remarks
Page 5 and 6:
2012 ICMCTF SCHEDULE OF EVENTS DAY
Page 7 and 8:
SYMPOSIUM A Coatings for Use at Hig
Page 9 and 10:
Marco Cremona Pontificia Universida
Page 11 and 12:
Exhibitor Keynote Lecture Tuesday,
Page 13 and 14:
2011/12, discuss ideas and prioriti
Page 15 and 16:
At the focus topic, from the experi
Page 17 and 18:
2012 R.F. Bunshah Annual Award & IC
Page 19 and 20:
ICMCTF 2012 Graduate Student Awards
Page 21 and 22:
ICMCTF 2012 thanks Plansee for thei
Page 23 and 24:
ICMCTF 2012 thanks AJA Internationa
Page 25 and 26:
ICMCTF 2012 thanks CemeCon for thei
Page 27 and 28:
ICMCTF 2012 Short Courses April 22
Page 29 and 30:
ICMCTF 2012 Planning Grid We provid
Page 31 and 32:
Key to Session/Paper Numbers A Coat
Page 33 and 34:
Monday Morning, April 23, 2012 Fund
Page 35 and 36:
New Horizons in Coatings and Thin F
Page 37 and 38:
Fundamentals and Technology of Mult
Page 39 and 40:
Advanced Characterization of Coatin
Page 41 and 42:
Hard Coatings and Vapor Deposition
Page 43 and 44:
Tribology & Mechanical Behavior of
Page 45 and 46:
Page 47 and 48:
Coatings for Use at High Temperatur
Page 49 and 50:
Applications, Manufacturing, and Eq
Page 51 and 52:
Wednesday Afternoon, April 25, 2012
Page 53 and 54:
Page 55 and 56:
Page 57 and 58:
Page 59 and 60:
Page 61 and 62:
Thursday Afternoon Poster Sessions
Page 63 and 64:
Page 65 and 66:
Page 67 and 68:
Page 69 and 70:
Page 71 and 72:
Page 73 and 74:
Free Caricatures & Massages!! E-1 V
Page 75 and 76:
ICMCTF 2012 EXHIBIT HALL Internatio
Page 77 and 78:
I C M C T F 2012 S P O N S O R S Bo
Page 79 and 80:
All in Good Measure A 24 µm scan o
Page 81 and 82:
Call For Abstracts Deadline: MAY 2,
Page 83:
CC800 ® /9 HIPIMS true integration
Page 86:
Exhibit Hall Reception - Atlas Ball
Page 89:
Kaufman & Robinson announces their
Page 93 and 94:
Miba Coating Group is the specialis
Page 95 and 96:
PLANSEE SE, 6600 Reutte, Austria, T
Page 98 and 99:
� ��
Page 101 and 102:
Plenary Talk Room: Golden Ballroom
Page 103 and 104:
content. Analyses of the oxidised c
Page 105 and 106:
- The control on the gradient in re
Page 107 and 108:
μ = 0.4 to μ = 0.9). On the other
Page 109 and 110:
Page 111 and 112:
application tests the ta-C coated d
Page 113 and 114:
4:10pm C2-2/F4-2-10 Investigation o
Page 115 and 116:
process with surfactant on WO3/ITO
Page 117 and 118:
is already reported. To further com
Page 119 and 120:
conditions. The details of the comp
Page 121 and 122:
esidual stress and to the Poisson
Page 123 and 124:
Page 125 and 126:
eactive gases with the target mater
Page 127 and 128:
Page 129 and 130:
emerging fields. State-of-the-art t
Page 131 and 132:
transparent conducting layers. Howe
Page 133 and 134:
methods provide similar carrier den
Page 135 and 136:
of AISI 52100 steels by developing
Page 137 and 138:
deposition based on high power puls
Page 139 and 140:
Page 141 and 142:
coatings removed from the aluminum
Page 143 and 144:
spectroscopy varies from 25 at% to
Page 145 and 146:
This article describes how to use s
Page 147 and 148:
een demonstrated both theoretically
Page 149 and 150:
Furthermore, the silane coupling ag
Page 151 and 152:
10:40am A1-1-9 High temperature oxi
Page 153 and 154:
10:40am B4-2-10 Understanding the d
Page 155 and 156:
11:00am B5-1-10 Hard nanocrystallin
Page 157 and 158:
* Sandia National Laboratories is a
Page 159 and 160:
fluidized bed of tin, zinc and alum
Page 161 and 162:
Page 163 and 164:
mechanical and chemical properties.
Page 165 and 166:
duration for super-low friction see
Page 167 and 168: stainless steel DIN X42Cr13 surface
Page 169 and 170: 2:30pm TS1-1-3 Surface engineering
Page 171 and 172: Coatings for Use at High Temperatur
Page 173 and 174: Hard Coatings and Vapor Deposition
Page 175 and 176: X-ray diffraction patterns of the Z
Page 177 and 178: 11:20am B6-1-11 Direct current magn
Page 179 and 180: loading situations could help to ob
Page 181 and 182: Energetic Materials and Micro-Struc
Page 183 and 184: The present work was supported by t
Page 185 and 186: silica-based hydrophilic coatings i
Page 187 and 188: extent depending on the actual grow
Page 189 and 190: [1] F. Tasnádi, B. Alling, C. Hög
Page 191 and 192: eproducibility of the preparation o
Page 193 and 194: showed by the uncoated 4140 steel s
Page 195 and 196: polarization resistance and corrosi
Page 197 and 198: thin films in which a multiscale mo
Page 199 and 200: centers, ascribed to conduction ele
Page 201 and 202: BP-26 Characterization of laser abl
Page 203 and 204: BP-38 Stress signature of an amorph
Page 205 and 206: simultaneously optimize materials p
Page 207 and 208: CP-17 Effects of UV Light Treatment
Page 209 and 210: amorphous structure with a smooth s
Page 211 and 212: addition, it was observed that the
Page 213 and 214: EP-5 The effective Indenter concept
Page 215 and 216: the substrates directly or after ra
Page 217: as-grown films using textured Si as
Page 221 and 222: FP-24 Effect of hydrogen addition o
Page 223 and 224: oxide obtained was correlated to th
Page 225 and 226: Post Deadline Discoveries and Innov
Page 227 and 228: chemical bonds have also been achie
Page 229 and 230: 9:40am B3-1-6 Compressive stress ge
Page 231 and 232: 10:20am D2-1-8 Corrosion Resistance
Page 233 and 234: property combination is attractive
Page 235 and 236: PVD is a challenging task. The pres
Page 237 and 238: Chang, G.W.: C2-3/F4-3-3, 29; GP-3,
Page 239 and 240: Huang, K.H.: BP-33, 102 Huang, P.H.
Page 241 and 242: Moody, N.R.: F6-1-1, 7 Moon, S.: D1
Page 243 and 244: Szeremley, D.: G3-1-7, 68 Szesz, E.
Page 245 and 246: NOTES 145
Page 247 and 248: Description of Research Highlights:
Page 249 and 250: their presentations in order to eva
Page 251 and 252: NOTES 151
Page 253 and 254: 153
Page 255 and 256: MARK YOUR CALENDAR FOR ICMCTF 2013!
show all

ICMCTF 2012! - CD-Lab Application Oriented Coating Development

You also want an ePaper? Increase the reach of your titles

Delete template?

Save as template?