ICMCTF 2012! - CD-Lab Application Oriented Coating Development
ICMCTF 2012! - CD-Lab Application Oriented Coating Development
ICMCTF 2012! - CD-Lab Application Oriented Coating Development
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Hard <strong>Coating</strong>s and Vapor Deposition Technology<br />
Room: Royal Palm 4-6 - Session B3-1<br />
Ion-Surface Interactions in Film Growth and Post-<br />
Growth Processes<br />
Moderator: S. Fairchild, Air Force Research <strong>Lab</strong>oratory,<br />
US, K. Sarakinos, Linköping University, Sweden<br />
8:00am B3-1-1 Tantalum Based <strong>Coating</strong>s Deposited by Pulsed DC<br />
Magnetron Sputtering and Highly Ionized Pulse Plasma Processes, J.<br />
Barriga (jbarriga@tekniker.es), L. Mendizabal, U. Ruiz de Gopegui, R.<br />
Bayon, Tekniker, Spain<br />
Transition metals and their nitrides are widely used in the industry as<br />
protective coatings because of their excellent tribological properties.<br />
Among them, tantalum (Ta) demonstrated to provide high wear protection<br />
[1] as well good corrosion resistance and biocompatibility [2]. However,<br />
there are only a few studies up to date about tribological analysis of<br />
coatings based on this metal. This could be due to the difficulty in<br />
evaporating Ta in Physical Vapor Deposition systems because its relatively<br />
low thermal and electrical conductivity and high fusion temperature.<br />
In this work three different evaporation techniques are used and compared.<br />
All of them are varieties of Magnetron Sputtering: pulsed DC, HiPIMS<br />
(High Power Impulse MS) and MPP (Modulated Power Pulse). With these<br />
last two techniques there is a potential improvement on coating quality<br />
because during the evaporation process we have peaks of high power<br />
density increasing the ionization, density of the coating, adhesion and wear<br />
resistance [3].<br />
We have seen that h igh power techniques (HiPIMS and MPP) enhance the<br />
hardness of TaN coatings compared to conventional Pulsed DC MS. The<br />
interface TaN with stainless steel is denser with MPP technique and better<br />
adhesion of the coating is achieved. In corrosion tests all samples show<br />
passive behavior and low corrosion currents in the anodic branch. TaN by<br />
HiPIMS showed the highest corrosion resistance which increased when<br />
increasing the immersion time due to its denser microstructure and the<br />
stable electrochemical behavior of its passive film formed in PBS solution.<br />
[1] J. Esteve, E. Martínez, A. Lousa, F. Montalà, L.L. Carreras,<br />
“Microtribological characterization of group V and VI metal-carbide wearresistant<br />
coatings effective in the metal casting industry”, Surf. Coat.<br />
Technol. 133–134 (2000) 314–318.<br />
[2] J. Black, "Biological performance of tantalum". Clin. Mater. 16 (3):<br />
167–173. (1994). doi:10.1016/0267-6605(94)90113-9.<br />
[3] A.P. Ehiasarian, book chapter: “Fundamentals and <strong>Application</strong>s of High<br />
Power Impulse Magnetron Sputtering”, Plasma Surface Engineering<br />
Research and its Practical <strong>Application</strong>s, p. 35 – 86 (2007), ISBN 978-81-<br />
308-0257-2.<br />
8:20am B3-1-2 Studies on plasma immersion ion implantation of<br />
nitrogen on titanium, K. R. M. Rao (rammohanrao.k@gmail.com),<br />
Department of Engineering Chemistry, GITAM Institute of Technolocgy,<br />
GITAM University, India, E. Richter, Institute of Ion Beam Physics for<br />
Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany, S.<br />
Mukherjee, FCIPT,Institute of Plasma Research, India, I. Manna, Central<br />
Glass and Ceramic Research Institute, India<br />
Abstract<br />
Formation of titanium nitride layer by following plasma immersion ion<br />
implantation (PIII) has been investigated at variable energies. For PIII<br />
experiments, square shaped commercially pure Ti samples of 1 mm<br />
thickness and 100 mm 2 area were mirror polished by standard<br />
metallographic techniques using 10-0.1 μm sized diamond paste. PIII was<br />
performed at variable negative bias without auxiliary heating. PIII chamber<br />
was first evacuated to 2 x 10 -3 Pa, then back filled with dehumidified N2 gas<br />
to 0.4 Pa pressure. Nitrogen plasma was created by a radio frequency (13.56<br />
MHz) coupled generator operated at 400 W. N2 + ion implantation from this<br />
RF coupled N2 + with 10 21 ions/m 2 was carried out at variable energy.<br />
Post implanted specimens were examined by X-ray diffraction (XRD) and<br />
Scanning Electron Microscope (SEM) for phase analysis and surface<br />
topography respectively. X-ray diffraction (GAXRD) using Cu-ka radiation<br />
(0.154 nm). All of them reflected the signature of the usual peaks of Ti<br />
along with TiN111. The volume fraction of TiN seems to be directly related<br />
to the implantation voltage.<br />
Moreover, the surface modified samples were exposed to Hank’s solution as<br />
the corrosive medium for the assessment of corrosion resistance properties.<br />
Friday Morning, April 27, <strong>2012</strong><br />
Friday Morning, April 27, <strong>2012</strong> 128<br />
These samples were subjected to potentiodynamic polarization tests at 1<br />
mV/sec scan rate and compared with respect to their polarization<br />
characteristics. Since TiN phase has been found in almost all the treatment<br />
conditions the enhancement in corrosion resistance may be attributed to the<br />
presence of titanium nitride covered on the surface layer.<br />
It has also been found that the corrosion resistance was higher at higher<br />
implantation voltage. The best condition of PIII for the corrosion resistance<br />
in Hank’s solution was found to be at a dose 2.4 x 10 21 ions/m 2 .<br />
8:40am B3-1-3 On the role of ions during reactive magnetron<br />
sputtering, D. Depla (Diederik.Depla@ugent.be), Ghent University,<br />
Belgium INVITED<br />
Ions play an prominent role during reactive magnetron sputtering. Their<br />
influence can be quite explicit as for example when a substrate bias is<br />
applied during thin film growth. However, ions can also play a more hidden<br />
role. This paper aims to give an overview of the different processes in<br />
which ions play a key role.<br />
The first, and most obvious during magnetron sputtering, is of course the<br />
sputter process as such. Although it seems straightforward to describe this,<br />
fundamental issues as the angular emission profile, compound sputter yield<br />
hampers a quantitative description of the deposition profile, and therefore<br />
the deposition rate at the substrate[1].<br />
A similar question exists about the role of ions during the sustaining<br />
mechanism of the magnetron discharges. In recent years, substantial<br />
progress has been in the understanding of the behaviour of the electron<br />
emission yield when oxidizing the target[2]. As the latter behaviour also<br />
influences the emission of negative oxygen ions, a good understanding is<br />
needed because high energetic negative oxygen ions affect in an important<br />
way thin film growth. A few examples of this behaviour will be given[3].<br />
As the ions bombard the target, they also become implanted. For inert gas<br />
atoms, their influence is minor. However, reactive ion implantation is an<br />
important pathway in the poisoning mechanism during reactive magnetron<br />
sputtering[4]. The paper will discuss the latest trends in the modelling of<br />
this process.<br />
Finally, ions can be used as a tool to influence the thin film growth. As they<br />
are charged species, their energy can easily be influenced by biasing the<br />
substrate. Moreover, they can also be guided towards the substrate. This<br />
approach becomes even more interesting when most of the metal species are<br />
ionized as in HIPIMS plasmas. However, when studying thin film growth,<br />
one must realize that not only the ions are important, and other species play<br />
also their role. This will be discussed in the context of the characterisation<br />
of the different particle fluxes from the plasma towards the substrate [5].<br />
[1] F Boydens, W P Leroy, R Persoons and D Depla, Submitting for<br />
publication to Physica status Solidi a<br />
[2] D Depla, S Mahieu, R.De Gryse, Thin Solid Films 517 (2009) 2825<br />
[3] S Mahieu, WP Leroy, K Van Aeken, D Depla, JAP 106 (2009) 093302<br />
[4] D. Depla, X. Y. Li, S. Mahieu,K. Van Aeken,W. P. Leroy, J. Haemers,<br />
R. De Gryse, A. Bogaerts, JAP 107 (2010) 0113307<br />
[5] S Mahieu, WP Leroy, K Van Aeken, M Wolter, J Colaux, S Lucas, G<br />
Abadias, P Matthys, D Depla, Solar Energy 85 (2011) 538<br />
9:20am B3-1-5 In situ characterization of plasma-surface interactions<br />
with a quartz crystal microbalance, C. Corbella<br />
(carles.corbella@rub.de), O. Kreiter, S. Grosse-Kreul, Ruhr Universität<br />
Bochum, Germany, D. Marinov, Ecole Polytechnique, France, T. de los<br />
Arcos, A. von Keudell, Ruhr Universität Bochum, Germany<br />
Particle beam experiments were conducted in an ultra-high-vacuum (UHV)<br />
vessel and monitored in real time by means of a quartz crystal microbalance<br />
(QCM). Several atom and ion guns were focused to the QCM and sent<br />
controlled fluxes of particle beams constituted by different elements. The<br />
UHV was achieved by using a turbomolecular pump in combination with an<br />
ion-getter-pump. First, the study of ion-enhanced oxidation of aluminium<br />
targets during reactive magnetron sputtering was performed by bombarding<br />
an Al-coated QCM with argon ions and oxygen atoms. An effusion cell<br />
provided Al vapour to restore the metallicity of the QCM. Second, beams of<br />
argon ions, together with oxygen and hydrogen species, were used to<br />
investigate the chemical sputtering of diamond-like carbon (DLC) films<br />
during plasma etching processes. For this purpose, we deposited DLC thin<br />
films on the QCM. Finally, remote plasmas interacted with the QCM to<br />
promote the physisorption/chemisorption of nitrogen atoms on SiO2<br />
surfaces. The treated surfaces were studied by X-ray photoelectron<br />
spectroscopy (XPS). These experiments shed some light into fundamental<br />
plasma-surface processes taking place in industrial plasma applications.