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ICMCTF 2012! - CD-Lab Application Oriented Coating Development

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Hard <strong>Coating</strong>s and Vapor Deposition Technology<br />

Room: Royal Palm 4-6 - Session B3-1<br />

Ion-Surface Interactions in Film Growth and Post-<br />

Growth Processes<br />

Moderator: S. Fairchild, Air Force Research <strong>Lab</strong>oratory,<br />

US, K. Sarakinos, Linköping University, Sweden<br />

8:00am B3-1-1 Tantalum Based <strong>Coating</strong>s Deposited by Pulsed DC<br />

Magnetron Sputtering and Highly Ionized Pulse Plasma Processes, J.<br />

Barriga (jbarriga@tekniker.es), L. Mendizabal, U. Ruiz de Gopegui, R.<br />

Bayon, Tekniker, Spain<br />

Transition metals and their nitrides are widely used in the industry as<br />

protective coatings because of their excellent tribological properties.<br />

Among them, tantalum (Ta) demonstrated to provide high wear protection<br />

[1] as well good corrosion resistance and biocompatibility [2]. However,<br />

there are only a few studies up to date about tribological analysis of<br />

coatings based on this metal. This could be due to the difficulty in<br />

evaporating Ta in Physical Vapor Deposition systems because its relatively<br />

low thermal and electrical conductivity and high fusion temperature.<br />

In this work three different evaporation techniques are used and compared.<br />

All of them are varieties of Magnetron Sputtering: pulsed DC, HiPIMS<br />

(High Power Impulse MS) and MPP (Modulated Power Pulse). With these<br />

last two techniques there is a potential improvement on coating quality<br />

because during the evaporation process we have peaks of high power<br />

density increasing the ionization, density of the coating, adhesion and wear<br />

resistance [3].<br />

We have seen that h igh power techniques (HiPIMS and MPP) enhance the<br />

hardness of TaN coatings compared to conventional Pulsed DC MS. The<br />

interface TaN with stainless steel is denser with MPP technique and better<br />

adhesion of the coating is achieved. In corrosion tests all samples show<br />

passive behavior and low corrosion currents in the anodic branch. TaN by<br />

HiPIMS showed the highest corrosion resistance which increased when<br />

increasing the immersion time due to its denser microstructure and the<br />

stable electrochemical behavior of its passive film formed in PBS solution.<br />

[1] J. Esteve, E. Martínez, A. Lousa, F. Montalà, L.L. Carreras,<br />

“Microtribological characterization of group V and VI metal-carbide wearresistant<br />

coatings effective in the metal casting industry”, Surf. Coat.<br />

Technol. 133–134 (2000) 314–318.<br />

[2] J. Black, "Biological performance of tantalum". Clin. Mater. 16 (3):<br />

167–173. (1994). doi:10.1016/0267-6605(94)90113-9.<br />

[3] A.P. Ehiasarian, book chapter: “Fundamentals and <strong>Application</strong>s of High<br />

Power Impulse Magnetron Sputtering”, Plasma Surface Engineering<br />

Research and its Practical <strong>Application</strong>s, p. 35 – 86 (2007), ISBN 978-81-<br />

308-0257-2.<br />

8:20am B3-1-2 Studies on plasma immersion ion implantation of<br />

nitrogen on titanium, K. R. M. Rao (rammohanrao.k@gmail.com),<br />

Department of Engineering Chemistry, GITAM Institute of Technolocgy,<br />

GITAM University, India, E. Richter, Institute of Ion Beam Physics for<br />

Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Germany, S.<br />

Mukherjee, FCIPT,Institute of Plasma Research, India, I. Manna, Central<br />

Glass and Ceramic Research Institute, India<br />

Abstract<br />

Formation of titanium nitride layer by following plasma immersion ion<br />

implantation (PIII) has been investigated at variable energies. For PIII<br />

experiments, square shaped commercially pure Ti samples of 1 mm<br />

thickness and 100 mm 2 area were mirror polished by standard<br />

metallographic techniques using 10-0.1 μm sized diamond paste. PIII was<br />

performed at variable negative bias without auxiliary heating. PIII chamber<br />

was first evacuated to 2 x 10 -3 Pa, then back filled with dehumidified N2 gas<br />

to 0.4 Pa pressure. Nitrogen plasma was created by a radio frequency (13.56<br />

MHz) coupled generator operated at 400 W. N2 + ion implantation from this<br />

RF coupled N2 + with 10 21 ions/m 2 was carried out at variable energy.<br />

Post implanted specimens were examined by X-ray diffraction (XRD) and<br />

Scanning Electron Microscope (SEM) for phase analysis and surface<br />

topography respectively. X-ray diffraction (GAXRD) using Cu-ka radiation<br />

(0.154 nm). All of them reflected the signature of the usual peaks of Ti<br />

along with TiN111. The volume fraction of TiN seems to be directly related<br />

to the implantation voltage.<br />

Moreover, the surface modified samples were exposed to Hank’s solution as<br />

the corrosive medium for the assessment of corrosion resistance properties.<br />

Friday Morning, April 27, <strong>2012</strong><br />

Friday Morning, April 27, <strong>2012</strong> 128<br />

These samples were subjected to potentiodynamic polarization tests at 1<br />

mV/sec scan rate and compared with respect to their polarization<br />

characteristics. Since TiN phase has been found in almost all the treatment<br />

conditions the enhancement in corrosion resistance may be attributed to the<br />

presence of titanium nitride covered on the surface layer.<br />

It has also been found that the corrosion resistance was higher at higher<br />

implantation voltage. The best condition of PIII for the corrosion resistance<br />

in Hank’s solution was found to be at a dose 2.4 x 10 21 ions/m 2 .<br />

8:40am B3-1-3 On the role of ions during reactive magnetron<br />

sputtering, D. Depla (Diederik.Depla@ugent.be), Ghent University,<br />

Belgium INVITED<br />

Ions play an prominent role during reactive magnetron sputtering. Their<br />

influence can be quite explicit as for example when a substrate bias is<br />

applied during thin film growth. However, ions can also play a more hidden<br />

role. This paper aims to give an overview of the different processes in<br />

which ions play a key role.<br />

The first, and most obvious during magnetron sputtering, is of course the<br />

sputter process as such. Although it seems straightforward to describe this,<br />

fundamental issues as the angular emission profile, compound sputter yield<br />

hampers a quantitative description of the deposition profile, and therefore<br />

the deposition rate at the substrate[1].<br />

A similar question exists about the role of ions during the sustaining<br />

mechanism of the magnetron discharges. In recent years, substantial<br />

progress has been in the understanding of the behaviour of the electron<br />

emission yield when oxidizing the target[2]. As the latter behaviour also<br />

influences the emission of negative oxygen ions, a good understanding is<br />

needed because high energetic negative oxygen ions affect in an important<br />

way thin film growth. A few examples of this behaviour will be given[3].<br />

As the ions bombard the target, they also become implanted. For inert gas<br />

atoms, their influence is minor. However, reactive ion implantation is an<br />

important pathway in the poisoning mechanism during reactive magnetron<br />

sputtering[4]. The paper will discuss the latest trends in the modelling of<br />

this process.<br />

Finally, ions can be used as a tool to influence the thin film growth. As they<br />

are charged species, their energy can easily be influenced by biasing the<br />

substrate. Moreover, they can also be guided towards the substrate. This<br />

approach becomes even more interesting when most of the metal species are<br />

ionized as in HIPIMS plasmas. However, when studying thin film growth,<br />

one must realize that not only the ions are important, and other species play<br />

also their role. This will be discussed in the context of the characterisation<br />

of the different particle fluxes from the plasma towards the substrate [5].<br />

[1] F Boydens, W P Leroy, R Persoons and D Depla, Submitting for<br />

publication to Physica status Solidi a<br />

[2] D Depla, S Mahieu, R.De Gryse, Thin Solid Films 517 (2009) 2825<br />

[3] S Mahieu, WP Leroy, K Van Aeken, D Depla, JAP 106 (2009) 093302<br />

[4] D. Depla, X. Y. Li, S. Mahieu,K. Van Aeken,W. P. Leroy, J. Haemers,<br />

R. De Gryse, A. Bogaerts, JAP 107 (2010) 0113307<br />

[5] S Mahieu, WP Leroy, K Van Aeken, M Wolter, J Colaux, S Lucas, G<br />

Abadias, P Matthys, D Depla, Solar Energy 85 (2011) 538<br />

9:20am B3-1-5 In situ characterization of plasma-surface interactions<br />

with a quartz crystal microbalance, C. Corbella<br />

(carles.corbella@rub.de), O. Kreiter, S. Grosse-Kreul, Ruhr Universität<br />

Bochum, Germany, D. Marinov, Ecole Polytechnique, France, T. de los<br />

Arcos, A. von Keudell, Ruhr Universität Bochum, Germany<br />

Particle beam experiments were conducted in an ultra-high-vacuum (UHV)<br />

vessel and monitored in real time by means of a quartz crystal microbalance<br />

(QCM). Several atom and ion guns were focused to the QCM and sent<br />

controlled fluxes of particle beams constituted by different elements. The<br />

UHV was achieved by using a turbomolecular pump in combination with an<br />

ion-getter-pump. First, the study of ion-enhanced oxidation of aluminium<br />

targets during reactive magnetron sputtering was performed by bombarding<br />

an Al-coated QCM with argon ions and oxygen atoms. An effusion cell<br />

provided Al vapour to restore the metallicity of the QCM. Second, beams of<br />

argon ions, together with oxygen and hydrogen species, were used to<br />

investigate the chemical sputtering of diamond-like carbon (DLC) films<br />

during plasma etching processes. For this purpose, we deposited DLC thin<br />

films on the QCM. Finally, remote plasmas interacted with the QCM to<br />

promote the physisorption/chemisorption of nitrogen atoms on SiO2<br />

surfaces. The treated surfaces were studied by X-ray photoelectron<br />

spectroscopy (XPS). These experiments shed some light into fundamental<br />

plasma-surface processes taking place in industrial plasma applications.

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