QUINOXALINE-CONTAINING POLYFLUORENES: ENHANCED BLUE ELECTROLUMINESCENCE BY ADDITION OF A HOLE BLOCKING LAYERFigure 5. Electronic Structures <strong>of</strong> (a) Diode I, (b) Diode II, and (c) Diode III.The EL spectra <strong>of</strong> Diode II and Diode II <strong>of</strong> each molar ratioare shown in Figure 6. No significant shifts in the peaks or lineshape were found for any diodes or molar ratios over the appliedvoltage range. All diodes were blue emitting with an average CIE<strong>of</strong> ~(0.16, 0.04), which is similar to the true blue color emittedfrom the PFO homopolymer. On average, a blue shift <strong>of</strong> ~15 nmwas shown for the EL emission relative to the thin film PL emission.The current density-voltage and luminance-voltage graphs<strong>of</strong> Diodes II and III are shown for each molar ratio in Figures7 and 8, respectively. The turn-on voltages for the QXF2 andQXF5 were ~5 V for all device configurations, while the QXF15had consistently higher turn-on voltages <strong>of</strong> ~6 V. The quinoxalinemoiety improves electron injection, but the higher turn-onvoltages for QXF15 suggest that the improved electron injectionlead to a charge imbalance.Maximum luminances for Diode I were 230, 160, and 24cd/m 2 with luminous efficiencies (LE) <strong>of</strong> 0.05, 0.03, and 0.01 cd/A for QXF2, QXF5, and QXF15, respectively. The EQE valueswere very low at 0.19, 0.14, and 0.032% for QXF2, QXF5,and QXF15. The low brightnesses and efficiencies for the devicewere expected due to the large barrier to hole injection <strong>of</strong> 0.6 Vbetween the PEDOT and QXF layers. Highest brightness for DiodeII was exhibited by QXF5 with a luminance <strong>of</strong> 1180 cd/m 2 ,LE <strong>of</strong> 0.25 cd/A, and EQE <strong>of</strong> 0.33%. For Diode III, the QXF2copolymer exhibited the highest brightness, relative to QXF5and QXF15, <strong>of</strong> 1623 cd/m 2 with a LE <strong>of</strong> 0.91 cd/A and EQE <strong>of</strong>1.52%.Figure 6. EL Spectra <strong>of</strong> QXF2, QXF5, and QXF15for (a) Diode II and (b) Diode III.Figure 7. (left column) Luminance-Voltage Characteristics<strong>of</strong> (top) QXF2, (middle) QXF5, and (bottom) QXF15. Redis Diode III, Blue is Diode II unless otherwise noted.Figure 8. (right column) Current Density-Voltage Characteristics <strong>of</strong> (top) QXF2,(middle) QXF5, and (bottom) QXF15. Red is Diode II, Blue is Diode III.The addition <strong>of</strong> the TPBI hole blocking layer in Diode III forall molar ratios improved luminance and efficiency. For QXF2,Diode II had a maximum luminance <strong>of</strong> 310 cd/m 2 , LE <strong>of</strong> 0.20 cd/A, and EQE <strong>of</strong> 0.81%. The addition <strong>of</strong> the TPBI layer in DiodeIII for QXF2 showed a brightness <strong>of</strong> 1620 cd/m 2 , LE <strong>of</strong> 0.91 cd/A, and EQE <strong>of</strong> 1.52%. The brightness improved by a factor <strong>of</strong> 5and the EQE showed an increase <strong>of</strong> 0.7% in Diode III relative toDiode II for QXF2. Similar improvements between Diode II andDiode III were shown for QXF5 and QXF15. These improvementsin luminance, LE, and EQE between Diode II and DiodeIII for all molar ratios are due to the low lying IP <strong>of</strong> TPBI whichaides in the containment <strong>of</strong> charge recombination to the emissivelayer.All molar ratios exhibited an increase in efficiency and brightnesswhen TPBI was added to the device architecture. However,64 CMDITR Review <strong>of</strong> Undergraduate Research Vol. 2 No. 1 Summer <strong>2005</strong>
IRVINQXF2 and QXF5 displayed higher brightnesses for all diodesthan QXF15. The increased quinoxaline content in QXF15 leadto an imbalance in charge injection that resulted in poor deviceresults for all diodes relative to the results for QXF5 and QXF2.Kulkarni et al. observed a similar trend for molar ratios up to 50mol % quinoxaline (QXF50). 6For the Diode III architecture, QXF2 demonstrated a higherbrightness <strong>of</strong> 1620 cd/m 2 than the same device based on QXF5(L max<strong>of</strong> 1510 cd/m 2 ). However, the EQE value for Diode III basedon QXF5 was 1.77% which is higher than the EQE <strong>of</strong> the samediode based on QXF2 (1.52%). For Diode II, a similar trend <strong>of</strong>higher brightness and lower EQE for QXF5 relative to QXF2 wasexhibited. Therefore, better balance in charge injection cannot beconclusively attributed to either QXF2 or QXF5.A device with configuration <strong>of</strong> Diode III was constructedbased on the homopolymer PFO as the emissive layer. A peakbrightness <strong>of</strong> only 700 cd/m 2 was shown for this diode. Thebrightness <strong>of</strong> 700 cd/m 2 is significantly lower than peak brightnessachieve for similar diodes based on QXF2 and QXF5. QXF2 andQXF5 demonstrated peak brighnesses >1510cd/m 2 . The addition<strong>of</strong> the n-type material improved brightness relative to PFO andthis improvement can be attributed to better electron transport inthe QXF2 and QXF5 copolymers.5. Leclerc, M. Polyfluorenes: Twenty Year <strong>of</strong> Progress. Journal<strong>of</strong> Polymer Science: Part A: Polymer Chemistry 2001, Vol 39,2867-2873.6. Kulkarni, A.P.; Zhu, Y.; Jenekhe, S.A. Quinoxaline-ContainingPolyfluorenes: Synthesis, Photophysics, and Stable Blue E Electroluminescence.Macromolecules <strong>2005</strong>, 38, 1553-1563.ACKNOWLEDGEMENTSPr<strong>of</strong>. Jenekhe, Jessica Hancock (mentor), Deptartments <strong>of</strong>Chemistry and <strong>of</strong> Chemical Engineering at the <strong>University</strong> <strong>of</strong><strong>Washington</strong>, Hooked on Photonics program, National ScienceFoundation, STC-MDITRKelli Irvin is currently studying chemical engineering at MontanaState <strong>University</strong>. She will be transferring to the <strong>University</strong> <strong>of</strong><strong>Washington</strong> in Winter <strong>of</strong> 2006 to complete her degree. Kelli intendsto obtain an engineering position in industry upon graduation.CONCLUSIONSQXF2 and QXF5 show promise as copolymers capable <strong>of</strong>stable blue electroluminescence over a wide voltage range. DiodeIII for QXF2 and QXF5 exhibited improved brightness froma similar diode using PFO as the emissive layer. The improvementin brightness suggests less quenching <strong>of</strong> luminance at theinterface for devices based on a copolymer <strong>of</strong> n-type and p-typematerials compared to a device using a p-type material as theemissive layer. The incorporation <strong>of</strong> TPBI as a hole blockinglayer into a device with PVK as a hole injection layer exhibitedenhanced brightness and efficiency when compared to a devicewithout the TPBI layer. The power <strong>of</strong> n-type and p-type materialscompolymerized as an emissive layer with the incorporation <strong>of</strong> ahole blocking layer into a device was demonstrated.REFERENCES1. Kelly, S.M.; Flat Panel Displays. In Flat Panel Displays: AdvancedOrganic Materials; Connor, J.A.; RSC Materials MonographsSeries; R. Soc. Chem: Cambridge, UK 2000; pp 5-7.2. Friend, R.; Burroughes, J.; Shimoda, T.; Polymer diodes. PhysicsWorld 1999, pp. 35-36.3. Howard, Webster E. Better Displays with Organic Films. ScientificAmerican, Jan 12, 2004, pp 1-4.4. Burroughes, J.H., et al. Light-emitting diodes based on conjugatedpolymers. Nature 1990, 347, 539-541.CMDITR Review <strong>of</strong> Undergraduate Research Vol. 2 No. 1 Summer <strong>2005</strong> 65
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