document title / titre du document TRP W ORK PLAN ... - emits - ESA

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TRP Work Plan 2005-2007 Description of Activities TEC-SB/7935/dc 12/Feb/09 TRP Reference: Title: T608-43QC GaN Reliability Enhancement and Technology Transfer Initiative (GREAT2) An overall strategy paper towards implementing a coherent plan for gallium nitride (GaN) component and technology development was presented at the 233rd meeting of the IPC (Ref: ESA/IPC(2006)89). Key to this strategy and the subject of this procurement plan is the establishment of an independent European supply chain for GaN microwave power components that European space industry can access. Gallium nitride is clearly an emerging, but yet immature technology within Europe. At present, there is no commercial GaN component supply chain in Europe to satisfy the needs of space industry. The proposed activity is therefore based on a step-wise approach, allowing verification and assessment of results. Fundamental is the decision to initially limit the early development of materials and device techniques towards microwave payload technology. A further overriding consideration for space application is the need to demonstrate and improve the reliability of GaN based devices. The activity will address dual objectives: • Improvement of GaN device reliability for space application • Establishment of an independent European component supply chain for discrete transistors and MMICs. This TRP activity is planned to last 2 years and will focus on the required initial characterisation, modelling and process developments. These tasks will be supported by a follow on program of work, to be implemented through NewPro (Ref: ESA/IPC(2007)75, Activity : NP10-11QC), that will address the establishment of the process demonstration, technology industrialisation and performance evaluation. The program of work will be broken down into several distinct tasks with phases and a defined target at the end of each phase. Continuation through GSTP/NewPro funding will depend upon these TRP targets being met. Table 1 in ESA/IPC(2007)75 indicates the program of work, including the planned GSTP/NewPro activities, in order to give a clearer overall work break down description. Task Breakdown Description for TRP funded work items 1) Thermal characterisation of GaN devices. Accurate measurement of transistor channel temperature is required to derive reliability information and to determine the safe operating area for application in space. Infra-red or numerical simulation techniques are commonly used to derive channel temperature information and can give inaccurate results due to poor geometrical resolution or inaccurate model parameters. The objective of this task is to investigate the use of micro-Raman measurement techniques in order to obtain high accuracy channel temperature and electric field measurements for GaN power transistors. 2) GaN HEMT theoretical modelling and optimisation for space application. The objective of this activity is to use Monte-Carlo simulation techniques (or other appropriate modelling tools) to analyse and optimise GaN HEMT device performance. After successful “calibration” and agreement with measured results, the intention is to use this technique as a predictive tool to guide future device processing and physical structure developments to optimise operating frequency, breakdown voltage, output power and reliability. 3) GaN HEMT design and fabrication for improved reliability. At present the reliability of wide bandgap active devices from European sources is unacceptable to allow operation in space. This task will undertake iterative, and closely linked, development steps to improve material quality and device design/process optimisation along with direct assessment of the effect upon reliability. This approach will allow a feedback loop to be established where incremental improvements in reliability are fed back to growth/processing engineers helping to guide further process/material improvements as required. This program will demonstrate improved GaN device reliability such that acceptably low FIT rates for space based operation are reproducibly achieved. 4) Space compatible MMIC process technology development. The objectives of this work item are to identify the techniques required to enhance the reliability, reproducibility and performance of microstrip based GaN MMICs. The improvements will occur through an optimisation of front-side and back-side MMIC processing. Failure accelerating conditions and accelerating mechanisms shall be investigated and the threshold limits for onset of failure modes identified and eliminated (or managed). This approach will allow identification of the optimum processes required to achieve good manufacturing reproducibility and allow the planned production transfer to manufacturing industry to occur more rapidly. 5) Initial developments GaN epitaxy. The objective of this task is to develop and implement techniques to (i) assess the quality of substrates procured from external sources (prior to commencing GaN epitaxy) and to (ii) characterise “as-grown” epitaxial wafers such that the best wafers can be pre-selected prior to commencing device processing. Key objectives are to define the substrate procurement specifications, to define the substrate quality assurance metrics and the use of appropriate test methods to measure substrate quality. Deliverables: Page 221 of 227
TRP Work Plan 2005-2007 Description of Activities TEC-SB/7935/dc 12/Feb/09 1) Device test results, Calibrated channel temperature measurement approach that can be used within GREAT2. 2) Calibrated device simulations; Recommendations on optimum device structures to concentrate development efforts. 3) Identification of key parameters effecting reliability; Demonstration of materials growth and processing steps required to eliminate failure mechanisms; Discrete power transistor samples. 4) Establishment of baseline GaN MMIC foundry process; Preliminary PID documentation, Reliability measurement data on test characterisation vehicles (TCV’s). 5) Establishment of substrate and epitaxy specification criteria required for production transfer, implementation of fast and non-destructive analysis techniques, technical notes. Current TRL: TRL3 Target TRL: TRL4 Application Need/Date: TRL5/6 >2009 Telecoms, EO, Navigation and Science Application/Mission: Contract Duration: 24 months payloads requiring HPA’s SW Clause : - Dossier0 Ref.: T-7826, T-7736 Consistency with Harmonisation ESA/IPC(2006)89 Roadmap and Conclusions: TRP Reference: T-M-QCT-02-MT Title: MTSL Lab Microelectronics Support Laboratory Frame contract (CCN). Deliverables: Technical notes, Current TRL: N/A Target TRL: N/A Application Need/Date: N/A Application/Mission: all missions Contract Duration: 60 months SW Clause : - Dossier0 Ref.: N/A Consistency with Harmonisation Roadmap and Conclusions: TRP Reference: Title: T-S-QCA-02-08 Utilisation of the Heavy-ion Irradiation Facility (HIF) for Components Studies The availability of the Heavy Ion Irradiation Facility has been demonstrated to be of paramount importance for ESA projects and the European Space industry as recently again proven by the urgent and successful SEE characterisation of 19 device types for the XMM project. ESA’s continuing support of HIF will remain an instrumental asset for the European Space effort. The objective of this activity is to maintain, upgrade and keep the HIF operational. To provide 240 hours of free beam time per year on a priority basis for the purpose of the ESA lead irradiation campaigns. Additionally, a minimum of 240 hours of beam time will be made available to ESA industrial contractors, research institutes and other interested users. All campaigns are supported by a qualified physicist and control room staff. A minimum of eight campaigns shall be scheduled per year covering four 100-hour periods and four 24-hour periods, more or less evenly spread throughout the year. Deliverables: Tested samples. Technical note, test results. Current TRL: N/A Target TRL: N/A Application Need/Date: N/A Application/Mission: all missions Contract Duration: 60 months SW Clause : - Dossier0 Ref.: T-7637 Consistency with Harmonisation Roadmap and Conclusions: N/A Page 222 of 227
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