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Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

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Figure 18 (a) Calculated band-edge exciton (1S 3/2 1S e ) structure versus effectiveradius as in Fig. 14. (b) Position of the absorbing (filled circles and squares) andemitting (open circles) features extracted from Fig. 17. In samples where h 1 and h 2are resolved, each position (shown as pluses) and their weighted average (squares)are shown. (c) Calculated relative oscillator strength of the optically allowed bandedgesublevels versus effective radius. The combined strength of 1 U and 0 U is shown.(d) Observed relative oscillator strength of the band-edge sublevels: 1 L (filled circles)and the combined strength of 1 U and 0 U (squares). (Adapted from Ref. 11.)CdSe sample with a mean radius of 1.2 nm changes with an externally appliedmagnetic field. Obviously, the data indicate that the presence of a fieldstrongly modifies the emission behavior. This fact, which is difficult to explainwith other models (e.g., due to surface trapping), is easily explained <strong>by</strong> thedark-exciton model. Because thermalization processes are highly efficient,excited nanocrystals quickly relax into their lowest sublevel (the dark exciton).Furthermore, the separation between the dark exciton and the first opticallyallowed sublevel (1 L ) is much larger than kT at cryogenic temperatures. Thus,<strong>Copyright</strong> <strong>2004</strong> <strong>by</strong> <strong>Marcel</strong> <strong>Dekker</strong>, <strong>Inc</strong>. <strong>All</strong> <strong>Rights</strong> <strong>Reserved</strong>.

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