Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

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integrating sphere allows accurate luminescence efficiencies to be calculated,provided that the efficiency is more than about 1%. The integrating sphere isalso used without the sample present to measure the incident laser power.With the sample present, use of filters or spectrographic detection enablesluminescence and nonabsorbed laser light to be distinguished, which can beused to calculate the fraction of laser power absorbed by the sample, as describedin Refs. 28 and 29.Transient absorption provides a powerful tool to study charge transferprocesses on fast timescales. Typically, the sample is excited with a laser pulseof f100 fs duration and is then probed with a pulse of white light after avariable delay of up to several nanoseconds. The probe beam can be used tomeasure the concentration of neutral and charged species because they introducenew subgap absorptions (from excitons and charged states), stimulatedemission (from excitons), and bleaching (due to depletion of the ground statewhen excited states are present). By varying the delay between pump andprobe, the populations of these various species can be studied as a function oftime. Several reviews of femotsecond pump-probe techniques are available[30–32].We find that charged states formed after charge transfer to nanocrystalsoften have lifetimes in the microsecond to millisecond range [27]. The populationand decay of these states can be studied without the need for pulsedlasers. In the quasi-steady-state technique often known as photoinducedabsorption, the sample is excited by a continuous-wave (CW) laser beammodulated with a mechanical chopper at frequencies up to a few kilohertz.Absorption is measured at energies between 0.5 and 3 eV using monochromatedlight from a tungsten lamp together with an appropriate detector, asshown in Fig. 4. A lock-in amplifier is used to measure the small change inabsorption at the chopping frequency, allowing fractional changes in transmissionas low as 10 6 to be measured. The lock-in amplifier measures theFigure 4Experimental arrangement for measurement of photoinduced absorption.Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.
components of modulation which are in phase and 90j out of phase with theexcitation. Monitoring the signal as a function of chopping frequency andpump intensity provides information about the lifetime and recombinationmechanism of the excited species.Electrical characterization of films containing nanocrystals can usevarious different measurement geometries; however, we have concentratedon measurements in simple planar structures, similar to that shown in Fig. 1,where a thin film is placed between metal electrodes. Spin-coating is aconvenient technique for producing uniform films of nanocrystals or of nanocrystal/polymerblends, and the top contact can be deposited on the activefilm by vacuum evaporation at rates of 1 – 2 A˚ /s. Use of a nitrogen-filled glovebox allows device preparation and measurement to be performed withoutexposure to air. Measurement of current–voltage (IV) curves is straightforward,although we have found that time-dependent effects complicate theinterpretation [33]. Where the device acts as an LED, the light output may bemeasured simultaneously. The electroluminescence quantum efficiency is thendefined as the ratio of the number of photons produced within the device tothe number of charges flowing in the external circuit. Quantum efficienciesmay be defined as either ‘‘internal’’ or ‘‘external,’’ depending on whether allthe generated photons are considered or just those which escape through thefront surface of the device. In the context of applications, the brightness of adevice in the forward direction is often measured in candelas per square meter,where the candela (cd) is a photometric unit where the radiant power isweighted according to the response of the eye. Efficiencies are therefore oftenquoted in units of candelas per ampere.Measurement of photocurrent in a planar device requires one contactthat is semitransparent, typically either a thin metal film or indium–tin oxide.Measurement of the current–voltage curve under illumination allows theshort-circuit current, l sc and open-circuit voltage, V oc , to be defined as shownin Fig. 5. A quantum efficiency (QE) may be defined (usually under shortcircuitconditions) as the ratio of electrons flowing in the external circuit tophotons incident on the device. The quantum efficiency will depend on thewavelength of the incident radiation; this dependence defines the ‘‘actionspectrum’’ of the device. For photovoltaic applications, it is the powerconversion efficiency which is the appropriate figure of merit, defined as theratio of electrical power extracted to the optical power incident. Maximumpower output is given not under short-circuit or open-circuit conditions, butwhere the load is chosen to maximize the product of current and voltage. Forillumination at a single wavelength, the power efficiency (PE) is related to thequantum efficiency byPE ¼ QEeV ocFFð13ÞE photonCopyright 2004 by Marcel Dekker, Inc. All Rights Reserved.
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Copyright 2004 by Marcel Dekker, In
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This book covers several topics of
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esult, some exciting topics were no
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3. Fine Structure and Polarization
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9. III-V Quantum Dots and Quantum D
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ContributorsUri BaninThe Hebrew Uni
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1‘‘Soft’’ Chemical Synthesi
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structure of energy states leads to
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growth can proceed by Ostwald ripen
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Figure 3 Transmission electron micr
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Figure 4 Temporal evolution of the
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No. 26, are f85% (Fig. 6) [21]. Alt
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tion spectra and broad PL spectra.
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ing surface-to-volume ratio with di
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Figure 8 Photoluminescence spectra
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lattice mismatch. Such a large latt
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match between InAs and ZnS of f11%.
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successfully repeated for up to thr
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Under a different growth regime, on
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Figure 14 Atomic model of the CdSe
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‘‘Teardrop-shaped’’ particl
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Figure 17 High-resolution TEMs of C
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allows isolation of tetrapods in f8
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ligand concentrations yield a reduc
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een determined and quantitatively c
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tion volumes were also shown to be
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synthesis temperatures of z400jC ar
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Figure 23 (a) Photoluminescence spe
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levels (fV1 Mn per NQD). Despite in
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Figure 25 X-ray diffraction pattern
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Figure 27 Transmission electron mic
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An additional factor that strongly
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Figure 30 (a,b) Schematics illustra
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Slow, controlled precipitation of h
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Figure 34 Schematic illustrating th
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achieving biological compatibility
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47. Yu H.; Gibbons P.C.; Kelton K.F
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2Electronic Structure inSemiconduct
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Figure 2 (a) Simple model of a nano
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electron and hole to be treated as
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independently, Eq. (13) is commonly
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a better description of the bulk ba
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investigated. For optical experimen
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Figure 4 (a) Absorption (solid line
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Figure 6 Normalized PLE scans for s
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Figure 8 A simplistic model for des
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Figure 10 Theoretically predicted p
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Figure 12 Schematics depicting the
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Figure 14 Calculated band-edge exci
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Figure 15 Absorption (solid line) a
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Figure 18 (a) Calculated band-edge
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IV.BEYOND CdSeA. Indium Arsenide Na
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the six-band Luttinger Hamiltonian.
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11. Norris, D.J.; Efros, Al.L.; Ros
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69. Gaponenko, S.V.; Woggon, U.; Sa
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formation of a long-lived dark exci
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where the constant A is determined
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In crystals for which the function
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The respective wave functions areC
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passive, as was shown in Ref. 12. T
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square of the matrix element of the
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where e F = e F ieV and e F F = e x
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see that for all nanocrystal shapes
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optical recombination of the excito
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B. Recombination of the Dark Excito
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where x = cos h and f = l B g e H/3
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The theory of the polarization memo
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Figure 7 The size dependence of the
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state would have an infinite lifeti
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crystal axis [see Eq. (40)]. As a r
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time of the exciton momentum relaxa
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One must also account for the influ
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observed in one of the first studie
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REFERENCES1. Bawendi, M.G.; Wilson,
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4Intraband Spectroscopyand Dynamics
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The solid line in Fig. 1 shows the
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Figure 2 FTIR spectra of n-type CdS
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of the center frequency. The experi
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limit given by radiative relaxation
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from a long lifetime due to the pho
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are two natural approaches to study
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32. Inoshita, T.; Sakaki, H. Physic
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continuous spectral tunability over
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function and envelope function mome
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ottleneck’’ [14,28]. Further re
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in NQDs is dominated by nonphonon e
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Figure 4 Dynamics of the IR postpum
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Figure 5 (a) Time-resolved PL spect
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Figure 6 (a) The time delay of the
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and due to Auger-type e-h interacti
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Figure 9 Dynamics of the 1S bleachi
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significantly greater than the fast
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Figure 11 (a) Pump-intensity-depend
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NQD size. For small NQD sizes (R =
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Figure 14 Nonlinear absorption/gain
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sorption change associated with a s
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where n h em is the hole ‘‘emit
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ultrafast (subpicosecond to picosec
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Figure 18 Schematic of transitions
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Figure 19 Dynamics of pump-induced
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where n i (i=1, 2 . . . , N ) is th
Page 213 and 214: Figure 21 (a) Two-e-h-pair (biexcit
Page 215 and 216: the volume fraction (filling factor
Page 217 and 218: intensity dependence of this peak (
Page 219 and 220: Copyright 2004 by Marcel Dekker, In
Page 221 and 222: can contribute to the saturation of
Page 223 and 224: Copyright 2004 by Marcel Dekker, In
Page 225 and 226: coupling between ‘‘volume’’
Page 227 and 228: numerous discussions on the photoph
Page 229 and 230: 53. Kang, K.; Kepner, A.; Gaponenko
Page 231 and 232: the ‘‘on-off ’’ emission in
Page 233 and 234: parallel form of data acquisition i
Page 235 and 236: Figure 3 (a) Spectral time trace of
Page 237 and 238: transition energies. In fact, these
Page 239 and 240: distribution (dark line) does not d
Page 241 and 242: exposure to only room light. In our
Page 243 and 244: statistics for the off times are in
Page 245 and 246: 230Shimizu and BawendiCopyright 200
Page 247 and 248: Figure 10 (a) Time trace of a CdSe(
Page 249 and 250: and excited QD core states to fluct
Page 251 and 252: arrows indicate the on-time truncat
Page 253 and 254: W. K. Woo and V. C. Sundar for assi
Page 255 and 256: size allows the electron affinity a
Page 257 and 258: II.THEORY OF ELECTRON TRANSFER BETW
Page 259 and 260: For the specific case of charge tra
Page 261 and 262: dominates, the mobility is often fi
Page 263: where the constant A and the temper
Page 267 and 268: nanocrystals [41], understanding ph
Page 269 and 270: and ionization potential through tw
Page 271 and 272: quantum dots. Furthermore, because
Page 273 and 274: For many applications, a host mater
Page 275 and 276: form blends with morphologies that
Page 277 and 278: Figure 11 Photoluminescence efficie
Page 279 and 280: Figure 12 (a) Room-temperature PIA
Page 281 and 282: discussed briefly in Section IV. Ch
Page 283 and 284: dithiolates to thiol-terminated DNA
Page 285 and 286: Films of passivated CdSe nanocrysta
Page 287 and 288: Figure 16 Photocurrent action spect
Page 289 and 290: decay with stretched exponential ki
Page 291 and 292: siderably larger than might be esti
Page 293 and 294: dispersing CdSe nanocrystal chromop
Page 295 and 296: memory and charge storage effects [
Page 297 and 298: all) of the optically excited elect
Page 299 and 300: composites of nanocrystals and conj
Page 301 and 302: 55. Asbury, J.B.; Hao, E.C.; Wang,
Page 303 and 304: 108. Morgan, N.Y.; Leatherdale, C.A
Page 305 and 306: The approaches to fabrication of se
Page 307 and 308: Figure 1 Experimental realization o
Page 309 and 310: Due to this voltage division, the m
Page 311 and 312: Figure 3 Simulated tunneling spectr
Page 313 and 314: electron charging. In both positive
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Figure 5 shows the typical features
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Figure 7 Map of levels for InAs nan
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Figure 8 Scanning electron microsco
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D CB = 0.31 eV is thus obtained. On
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Figure 11 Correlation of optical an
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atomistic approach based on pseudop
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charging indicated that the tunneli
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capacitance values were also kept t
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could not be detected in the QD/DT/
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Figure 18 Tunneling conductanceF sp
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data in the inset of Fig. 19 repres
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corresponding to the s-like wave fu
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7. Grabert, H.; Devoret, M.H., Eds.
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66. Su, B.; Goldman, V.J.; Cunningh
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dimensional confinement are created
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Figure 1 Transmission electron micr
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The room-temperature absorption and
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narrower in samples with larger mea
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GaInP 2 QDs from a plot of the squa
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crystal, indicating lattice-matched
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Figure 5 Evolution of Stranski-Kras
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C. Efficient Anti-Stokes Photolumin
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Because HF treatment has been shown
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intensity of the PL when it is on a
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eV stems from recombining carriers
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Figure 16 Model to explain two-colo
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although this term is not rigorousl
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10 ps (about an order of magnitude
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electron relaxation is inhibited an
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QDs, the nature of the QD capping s
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QD solution. For an interdot distan
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emission spectra of the two individ
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Figure 23 Change of the PL intensit
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(viz. the absorbed light intensity)
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Figure 25Impact ionization in QDs.m
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prevent electron-hole recombination
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36. Miller, R.D.J.; McLendon, G.; N
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91. Vurgaftman, I.; Singh, J. Appl.
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139. Mićić, O.I.; Ahrenkiel, S.P.
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10Synthesis and Fabrication of Meta
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Figure 2 (A-C) Progression of HR-TE
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Figure 3 Schematic for gold nanocry
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Nanocrystal growth can occur by two
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on the other hand, provide an ensem
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Figure 6 (a) SAXS patterns for disp
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Figure 8 The gold nanocrystal film
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of the stabilizing ligand, and the
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successfully modeled the 2D island
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2. Steric Stabilization and a Soft
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are fully extended. Moving away fro
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Figure 11 High-resolution SEM image
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Figure 13 (A) Transmission electron
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function of the density of localize
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Figure 15 High-resolution SEM image
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thiol-capped nanocrystals [2]. The
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41. Ackerson, B.J. Nature 1993, 365
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with the effect of the particle com
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Figure 1a shows the surface plasmon
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Figure 2 (a) Ultraviolet-visible ab
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agents [34]. The short-wavelength b
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Figure 4 (a) Plot of the plasmon ab
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the framework of traditional Mie’
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show that effects due to the surrou
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is located at the position of the g
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Figure 8 Ultraviolet-visible absorp
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laser pulses while being mixed in t
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Figure 10 shows HR-TEM images of go
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final irradiation product. At the s
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following the laser excitation appe
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36. Papavassiliou, G.C. Prog. Solid
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particles to expand. Because the he
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was frequency doubled in a 1-mm B-
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Figure 2 Frequency of the acoustic
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Figure 3 Change in radius (DR/R) ve
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In this model, the electrons couple
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Figure 5 Transient bleach data for
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Figure 7 (a) Transient bleach data
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that the particles with >80% Au hav
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3. Del Fatti, N.; Valle´e, F.; Fly
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