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Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

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Figure 8 Scanning electron microscopy measurements on a single InAs nanocrystalof 3.2 nm radius acquired at 4.2 K. The QDs are linked to the gold substrate<strong>by</strong> hexane–dithiol (DT) molecules, as shown schematically in the right inset. The leftinset presents a 10 10-nm STM topographic image of the QD. The tunneling I–Vcharacteristic is presented in (A). The tunneling conductance spectrum, dI/dV versusV, obtained <strong>by</strong> numerical differentiation of the I–V curve, is shown in (B). Thearrows depict the main energy separations: E e is the single-electron charging energy,E g is the nanocrystal bandgap, and D VB and D CB are the spacings between levels inthe valence and conduction bands, respectively.<strong>Copyright</strong> <strong>2004</strong> <strong>by</strong> <strong>Marcel</strong> <strong>Dekker</strong>, <strong>Inc</strong>. <strong>All</strong> <strong>Rights</strong> <strong>Reserved</strong>.

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