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ster energy transfer, and nonradiative decay (including trapping) all competewith charge transfer. In addition, not all of these processes are rigorouslydistinct or mutually exclusive. Trapped charges can still transfer to moreenergetically favorable acceptors or even recombine radiatively (giving rise todeep-trap luminescence). Likewise, a reasonantly transferred excitation canstill undergo charge separation or radiative recombination on the energyacceptorsite. For illustration, several energetically permissible paths tocharge generation at a conjugated polymer–CdSe nanocrystal interface aredepicted in Fig. 7.It is the possibility of rationally controlling these processes by sizetuning the energy levels of the quantum dots that is particularly exciting.Decreasing the size of a semiconductor nanoparticle alters its electron affinityFigure 7 Possible paths to charge generation at an interface between a quantumdot and a conjugated polymer (MEH-PPV). (a) Electron transfer from photoexcitedpolymer to quantum dot; (b) Fo¨rster transfer of exciton from polymer to dot, followedby hole transfer to polymer; (c) hole transfer from photoexcited dot to polymer.Over each path, radiative and nonradiative recombination will compete with thecharge and exciton transfer processes.Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.
and ionization potential through two main pathways [22]. Both processestend to destabilize excess charge on a quantum dot with respect to a bulksemiconductor (the absolute value of the electron affinity is decreased,whereas that of the ionization potential is increased). The first effect is thatof quantum confinement, which requires an increase in the kinetic energy ofthe carriers as the particle diameter is decreased. The second contribution is aclassical polarization effect. Because the organic surface ligands and matrixsurrounding a chemically prepared nanocrystal have a dielectric constant thatis usually considerably smaller than that of the inorganic semiconductor(e rf2 versus e rf10), the dielectric stabilization provided by the semiconductordecreases and hence the energy required to charge the nanocrystalincreases for smaller particles. Detailed calculations of the effects of bothquantum confinement and dielectric confinement on the excitonic and singleparticleenergy levels can be found in the literature [42–46]. For the experimentalistinterested in a quick ‘‘back-of-the-envelope’’ calculation of a particle’sredox potentials based on optical data, an estimate for the shifts of thelowest single-particle electron and hole levels can be obtained from a knowledgeof the bulk semiconductor EA and IP by partitioning the experimentallyobserved bandgap change between the conduction and valence band statesusing the ratio of the carriers’ effective masses:m hEA QD ¼ EA BulkDEð15Þm e þ m hIP QD ¼ IP Bulk þm eDEð16Þm e þ m hwhere EA QD and EA Bulk , and IP QD and IP Bulk are electron affinities andionization potentials of the quantum dot and bulk material, respectively, andDE is the experimentally determined increase in the optical gap with respect tothe bulk. Equations (15) and (16) will likely provide a lower limit for thechange in the EA and IP of the quantum dot material compared to the bulksemiconductor. This is because we have ignored the polarization effectsdiscussed earlier, as well as the electron–hole Coulomb contribution to theshift of the optical gap (which will tend to reduce the optical gap with respectto the single-particle gap). Because a straightforward infinite-barrier effectivemassapproximation will invariably overestimate the kinetic energy ofconfinement, combining polarization and particle-in-a-sphere terms [22]provides a rough upper limit for the difference between the quantum-dotEA or IP and the corresponding bulk conduction or valence band edge of theformt 2 p 22m*r 2 þ 1 e 2 1 1ð17Þ2r 4pe 0 e matrix e scCopyright 2004 by Marcel Dekker, Inc. All Rights Reserved.
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Copyright 2004 by Marcel Dekker, In
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This book covers several topics of
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esult, some exciting topics were no
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3. Fine Structure and Polarization
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9. III-V Quantum Dots and Quantum D
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ContributorsUri BaninThe Hebrew Uni
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1‘‘Soft’’ Chemical Synthesi
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structure of energy states leads to
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growth can proceed by Ostwald ripen
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Figure 3 Transmission electron micr
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Figure 4 Temporal evolution of the
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No. 26, are f85% (Fig. 6) [21]. Alt
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tion spectra and broad PL spectra.
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ing surface-to-volume ratio with di
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Figure 8 Photoluminescence spectra
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lattice mismatch. Such a large latt
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match between InAs and ZnS of f11%.
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successfully repeated for up to thr
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Under a different growth regime, on
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Figure 14 Atomic model of the CdSe
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‘‘Teardrop-shaped’’ particl
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Figure 17 High-resolution TEMs of C
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allows isolation of tetrapods in f8
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ligand concentrations yield a reduc
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een determined and quantitatively c
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tion volumes were also shown to be
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synthesis temperatures of z400jC ar
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Figure 23 (a) Photoluminescence spe
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levels (fV1 Mn per NQD). Despite in
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Figure 25 X-ray diffraction pattern
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Figure 27 Transmission electron mic
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An additional factor that strongly
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Figure 30 (a,b) Schematics illustra
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Slow, controlled precipitation of h
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Figure 34 Schematic illustrating th
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achieving biological compatibility
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47. Yu H.; Gibbons P.C.; Kelton K.F
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2Electronic Structure inSemiconduct
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Figure 2 (a) Simple model of a nano
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electron and hole to be treated as
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independently, Eq. (13) is commonly
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a better description of the bulk ba
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investigated. For optical experimen
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Figure 4 (a) Absorption (solid line
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Figure 6 Normalized PLE scans for s
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Figure 8 A simplistic model for des
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Figure 10 Theoretically predicted p
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Figure 12 Schematics depicting the
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Figure 14 Calculated band-edge exci
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Figure 15 Absorption (solid line) a
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Figure 18 (a) Calculated band-edge
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IV.BEYOND CdSeA. Indium Arsenide Na
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the six-band Luttinger Hamiltonian.
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11. Norris, D.J.; Efros, Al.L.; Ros
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69. Gaponenko, S.V.; Woggon, U.; Sa
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formation of a long-lived dark exci
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where the constant A is determined
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In crystals for which the function
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The respective wave functions areC
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passive, as was shown in Ref. 12. T
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square of the matrix element of the
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where e F = e F ieV and e F F = e x
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see that for all nanocrystal shapes
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optical recombination of the excito
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B. Recombination of the Dark Excito
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where x = cos h and f = l B g e H/3
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The theory of the polarization memo
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Figure 7 The size dependence of the
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state would have an infinite lifeti
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crystal axis [see Eq. (40)]. As a r
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time of the exciton momentum relaxa
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One must also account for the influ
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observed in one of the first studie
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REFERENCES1. Bawendi, M.G.; Wilson,
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4Intraband Spectroscopyand Dynamics
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The solid line in Fig. 1 shows the
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Figure 2 FTIR spectra of n-type CdS
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of the center frequency. The experi
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limit given by radiative relaxation
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from a long lifetime due to the pho
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are two natural approaches to study
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32. Inoshita, T.; Sakaki, H. Physic
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continuous spectral tunability over
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function and envelope function mome
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ottleneck’’ [14,28]. Further re
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in NQDs is dominated by nonphonon e
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Figure 4 Dynamics of the IR postpum
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Figure 5 (a) Time-resolved PL spect
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Figure 6 (a) The time delay of the
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and due to Auger-type e-h interacti
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Figure 9 Dynamics of the 1S bleachi
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significantly greater than the fast
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Figure 11 (a) Pump-intensity-depend
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NQD size. For small NQD sizes (R =
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Figure 14 Nonlinear absorption/gain
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sorption change associated with a s
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where n h em is the hole ‘‘emit
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ultrafast (subpicosecond to picosec
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Figure 18 Schematic of transitions
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Figure 19 Dynamics of pump-induced
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where n i (i=1, 2 . . . , N ) is th
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Figure 21 (a) Two-e-h-pair (biexcit
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the volume fraction (filling factor
Page 217 and 218: intensity dependence of this peak (
Page 219 and 220: Copyright 2004 by Marcel Dekker, In
Page 221 and 222: can contribute to the saturation of
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Page 225 and 226: coupling between ‘‘volume’’
Page 227 and 228: numerous discussions on the photoph
Page 229 and 230: 53. Kang, K.; Kepner, A.; Gaponenko
Page 231 and 232: the ‘‘on-off ’’ emission in
Page 233 and 234: parallel form of data acquisition i
Page 235 and 236: Figure 3 (a) Spectral time trace of
Page 237 and 238: transition energies. In fact, these
Page 239 and 240: distribution (dark line) does not d
Page 241 and 242: exposure to only room light. In our
Page 243 and 244: statistics for the off times are in
Page 245 and 246: 230Shimizu and BawendiCopyright 200
Page 247 and 248: Figure 10 (a) Time trace of a CdSe(
Page 249 and 250: and excited QD core states to fluct
Page 251 and 252: arrows indicate the on-time truncat
Page 253 and 254: W. K. Woo and V. C. Sundar for assi
Page 255 and 256: size allows the electron affinity a
Page 257 and 258: II.THEORY OF ELECTRON TRANSFER BETW
Page 259 and 260: For the specific case of charge tra
Page 261 and 262: dominates, the mobility is often fi
Page 263 and 264: where the constant A and the temper
Page 265 and 266: components of modulation which are
Page 267: nanocrystals [41], understanding ph
Page 271 and 272: quantum dots. Furthermore, because
Page 273 and 274: For many applications, a host mater
Page 275 and 276: form blends with morphologies that
Page 277 and 278: Figure 11 Photoluminescence efficie
Page 279 and 280: Figure 12 (a) Room-temperature PIA
Page 281 and 282: discussed briefly in Section IV. Ch
Page 283 and 284: dithiolates to thiol-terminated DNA
Page 285 and 286: Films of passivated CdSe nanocrysta
Page 287 and 288: Figure 16 Photocurrent action spect
Page 289 and 290: decay with stretched exponential ki
Page 291 and 292: siderably larger than might be esti
Page 293 and 294: dispersing CdSe nanocrystal chromop
Page 295 and 296: memory and charge storage effects [
Page 297 and 298: all) of the optically excited elect
Page 299 and 300: composites of nanocrystals and conj
Page 301 and 302: 55. Asbury, J.B.; Hao, E.C.; Wang,
Page 303 and 304: 108. Morgan, N.Y.; Leatherdale, C.A
Page 305 and 306: The approaches to fabrication of se
Page 307 and 308: Figure 1 Experimental realization o
Page 309 and 310: Due to this voltage division, the m
Page 311 and 312: Figure 3 Simulated tunneling spectr
Page 313 and 314: electron charging. In both positive
Page 315 and 316: Figure 5 shows the typical features
Page 317 and 318: Figure 7 Map of levels for InAs nan
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Figure 8 Scanning electron microsco
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D CB = 0.31 eV is thus obtained. On
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Figure 11 Correlation of optical an
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atomistic approach based on pseudop
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charging indicated that the tunneli
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capacitance values were also kept t
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could not be detected in the QD/DT/
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Figure 18 Tunneling conductanceF sp
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data in the inset of Fig. 19 repres
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corresponding to the s-like wave fu
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7. Grabert, H.; Devoret, M.H., Eds.
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66. Su, B.; Goldman, V.J.; Cunningh
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dimensional confinement are created
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Figure 1 Transmission electron micr
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The room-temperature absorption and
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narrower in samples with larger mea
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GaInP 2 QDs from a plot of the squa
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crystal, indicating lattice-matched
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Figure 5 Evolution of Stranski-Kras
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C. Efficient Anti-Stokes Photolumin
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Because HF treatment has been shown
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intensity of the PL when it is on a
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eV stems from recombining carriers
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Figure 16 Model to explain two-colo
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although this term is not rigorousl
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10 ps (about an order of magnitude
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electron relaxation is inhibited an
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QDs, the nature of the QD capping s
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QD solution. For an interdot distan
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emission spectra of the two individ
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Figure 23 Change of the PL intensit
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(viz. the absorbed light intensity)
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Figure 25Impact ionization in QDs.m
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prevent electron-hole recombination
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36. Miller, R.D.J.; McLendon, G.; N
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91. Vurgaftman, I.; Singh, J. Appl.
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139. Mićić, O.I.; Ahrenkiel, S.P.
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10Synthesis and Fabrication of Meta
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Figure 2 (A-C) Progression of HR-TE
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Figure 3 Schematic for gold nanocry
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Nanocrystal growth can occur by two
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on the other hand, provide an ensem
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Figure 6 (a) SAXS patterns for disp
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Figure 8 The gold nanocrystal film
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of the stabilizing ligand, and the
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successfully modeled the 2D island
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2. Steric Stabilization and a Soft
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are fully extended. Moving away fro
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Figure 11 High-resolution SEM image
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Figure 13 (A) Transmission electron
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function of the density of localize
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Figure 15 High-resolution SEM image
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thiol-capped nanocrystals [2]. The
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41. Ackerson, B.J. Nature 1993, 365
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with the effect of the particle com
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Figure 1a shows the surface plasmon
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Figure 2 (a) Ultraviolet-visible ab
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agents [34]. The short-wavelength b
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Figure 4 (a) Plot of the plasmon ab
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the framework of traditional Mie’
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show that effects due to the surrou
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is located at the position of the g
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Figure 8 Ultraviolet-visible absorp
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laser pulses while being mixed in t
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Figure 10 shows HR-TEM images of go
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final irradiation product. At the s
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following the laser excitation appe
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36. Papavassiliou, G.C. Prog. Solid
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particles to expand. Because the he
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was frequency doubled in a 1-mm B-
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Figure 2 Frequency of the acoustic
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Figure 3 Change in radius (DR/R) ve
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In this model, the electrons couple
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Figure 5 Transient bleach data for
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Figure 7 (a) Transient bleach data
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that the particles with >80% Au hav
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3. Del Fatti, N.; Valle´e, F.; Fly
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