Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

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Figure 15 (a) Current–voltage (I–V) Curves for three different ITO/CdSe/metaldevices. The CdSe layer for each device is composed of a 190-nm-thick film of 3.4-nm-diameter nanocrystals separated by TOPO surfactant. Diamonds indicate the I–Vcurve for the A1 cathode device, squares for the Ca cathode device, and circles for theAu cathode device. The anode was ITO in all cases. (b) Diagram showing the relativepositions of the Fermi levels of the metals used as electrodes in our nanocrystal devicesand the quantum-confined conduction band (QC-CB) and valence-band (QC-VB)edge states. The range indicated is obtained from the upper and lower estimates ofEqs. (15)–(17) as described in Section IV.low-work-function metals Ca and A1 produce high currents at low bias,whereas the high-work-function metal Au and ITO exhibit currents that aresmaller by several orders of magnitude at the same voltage. The currents forthe Ca and A1 devices turn on at the same voltage (despite work functionsdiffering by nearly 1.5 eV), suggesting that they provide equivalent electroninjection capabilities and that the observed current–voltage curves are thuslimited by the bulk properties of the samples. As shown in Fig. 15, theseresults are entirely consistent with both the model of charge injectiondescribed above as well as the EA estimates provided by Eqs. (15)–(17).A second means of introducing carriers into a quantum-dot film is byphotoexcitation. Strictly speaking, this involves photoinduced electron transferfrom one nanocrystal to another, but we include its discussion here, ratherthan in Section IV, because its is essentially a nanocrystal–nanocrystal chargetransfer problem. Using different experimental geometries, both we [33] andLeatherdale et al. [21] have demonstrated that photocurrents in films of CdSefollow a spectral response curve (Fig. 16) that nearly matches the quantumconfinedabsorption spectrum of the nanocrystals. Our experiments measuredphotocurrents through thin (200 nm) films of CdSe sandwiched between ITOand Al electrodes, with active areas of a few square millimeters that wereCopyright 2004 by Marcel Dekker, Inc. All Rights Reserved.
Figure 16 Photocurrent action spectra for ITO/CdSe/Al sandwich structures with200-nm-thick layers of 2.7-nm-diameter nanocrystals (triangles) and 4.5-nm-diameternanocrystals (circles). Also plotted is the fraction of incident light that isabsorbed in each film for the small (solid line) and large (dashed line) nanocrystals,including a simple correction for interference effects.illuminated through the ITO contact. Leatherdale et al. employed Au barelectrodes, with spacings of 1 to 20 Am. In our devices, we were able tomeasure external quantum efficiencies (collected charges/incident photons) of1–10% at room temperature under short-circuit conditions. In the shortcircuitmode, charges are collected by the built-in field that arises from thework-function difference between the A1 and ITO contacts. This amounts tofields of f310 6 V/m in our devices. On the other hand, Leatherdale et al.measured quantum efficiencies on the order of 10 4 electrons/photon, atapplied fields of f10 7 V/m. Because the fields are similar between the twoexperiments, we would expect similar charge generation rates, and the differentquantum efficiencies are therefore surprising. One possibility is that themismatch results from different recombination loss rates caused by thediffering distances traveled by carriers in each experiment.Finally, in both sets of experiments, it is found that the photocurrentincreases linearly with illumination intensity. This is consistent with a singlephotonmechanism for carrier generation and with first-order recombinationkinetics. This is the expected behavior if dissociation of the exciton is the ratelimitingstep, as most electron–hole pairs will recombine while still correlated(geminate recombination). First-order kinetics are also expected if recombinationis dominated by a high density of trap sites in the sample [107].One particularly unusual electrical property of CdSe quantum-dot filmsis the time and history dependence of their current–voltage characteristics.Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.
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Copyright 2004 by Marcel Dekker, In
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This book covers several topics of
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esult, some exciting topics were no
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3. Fine Structure and Polarization
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9. III-V Quantum Dots and Quantum D
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ContributorsUri BaninThe Hebrew Uni
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1‘‘Soft’’ Chemical Synthesi
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structure of energy states leads to
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growth can proceed by Ostwald ripen
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Figure 3 Transmission electron micr
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Figure 4 Temporal evolution of the
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No. 26, are f85% (Fig. 6) [21]. Alt
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tion spectra and broad PL spectra.
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ing surface-to-volume ratio with di
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Figure 8 Photoluminescence spectra
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lattice mismatch. Such a large latt
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match between InAs and ZnS of f11%.
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successfully repeated for up to thr
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Under a different growth regime, on
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Figure 14 Atomic model of the CdSe
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‘‘Teardrop-shaped’’ particl
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Figure 17 High-resolution TEMs of C
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allows isolation of tetrapods in f8
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ligand concentrations yield a reduc
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een determined and quantitatively c
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tion volumes were also shown to be
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synthesis temperatures of z400jC ar
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Figure 23 (a) Photoluminescence spe
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levels (fV1 Mn per NQD). Despite in
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Figure 25 X-ray diffraction pattern
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Figure 27 Transmission electron mic
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An additional factor that strongly
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Figure 30 (a,b) Schematics illustra
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Slow, controlled precipitation of h
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Figure 34 Schematic illustrating th
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achieving biological compatibility
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47. Yu H.; Gibbons P.C.; Kelton K.F
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2Electronic Structure inSemiconduct
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Figure 2 (a) Simple model of a nano
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electron and hole to be treated as
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independently, Eq. (13) is commonly
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a better description of the bulk ba
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investigated. For optical experimen
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Figure 4 (a) Absorption (solid line
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Figure 6 Normalized PLE scans for s
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Figure 8 A simplistic model for des
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Figure 10 Theoretically predicted p
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Figure 12 Schematics depicting the
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Figure 14 Calculated band-edge exci
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Figure 15 Absorption (solid line) a
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Figure 18 (a) Calculated band-edge
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IV.BEYOND CdSeA. Indium Arsenide Na
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the six-band Luttinger Hamiltonian.
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11. Norris, D.J.; Efros, Al.L.; Ros
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69. Gaponenko, S.V.; Woggon, U.; Sa
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formation of a long-lived dark exci
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where the constant A is determined
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In crystals for which the function
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The respective wave functions areC
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passive, as was shown in Ref. 12. T
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square of the matrix element of the
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where e F = e F ieV and e F F = e x
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see that for all nanocrystal shapes
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optical recombination of the excito
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B. Recombination of the Dark Excito
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where x = cos h and f = l B g e H/3
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The theory of the polarization memo
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Figure 7 The size dependence of the
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state would have an infinite lifeti
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crystal axis [see Eq. (40)]. As a r
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time of the exciton momentum relaxa
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One must also account for the influ
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observed in one of the first studie
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REFERENCES1. Bawendi, M.G.; Wilson,
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4Intraband Spectroscopyand Dynamics
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The solid line in Fig. 1 shows the
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Figure 2 FTIR spectra of n-type CdS
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of the center frequency. The experi
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limit given by radiative relaxation
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from a long lifetime due to the pho
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are two natural approaches to study
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32. Inoshita, T.; Sakaki, H. Physic
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continuous spectral tunability over
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function and envelope function mome
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ottleneck’’ [14,28]. Further re
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in NQDs is dominated by nonphonon e
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Figure 4 Dynamics of the IR postpum
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Figure 5 (a) Time-resolved PL spect
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Figure 6 (a) The time delay of the
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and due to Auger-type e-h interacti
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Figure 9 Dynamics of the 1S bleachi
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significantly greater than the fast
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Figure 11 (a) Pump-intensity-depend
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NQD size. For small NQD sizes (R =
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Figure 14 Nonlinear absorption/gain
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sorption change associated with a s
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where n h em is the hole ‘‘emit
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ultrafast (subpicosecond to picosec
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Figure 18 Schematic of transitions
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Figure 19 Dynamics of pump-induced
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where n i (i=1, 2 . . . , N ) is th
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Figure 21 (a) Two-e-h-pair (biexcit
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the volume fraction (filling factor
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intensity dependence of this peak (
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can contribute to the saturation of
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coupling between ‘‘volume’’
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numerous discussions on the photoph
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53. Kang, K.; Kepner, A.; Gaponenko
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the ‘‘on-off ’’ emission in
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parallel form of data acquisition i
Page 235 and 236: Figure 3 (a) Spectral time trace of
Page 237 and 238: transition energies. In fact, these
Page 239 and 240: distribution (dark line) does not d
Page 241 and 242: exposure to only room light. In our
Page 243 and 244: statistics for the off times are in
Page 245 and 246: 230Shimizu and BawendiCopyright 200
Page 247 and 248: Figure 10 (a) Time trace of a CdSe(
Page 249 and 250: and excited QD core states to fluct
Page 251 and 252: arrows indicate the on-time truncat
Page 253 and 254: W. K. Woo and V. C. Sundar for assi
Page 255 and 256: size allows the electron affinity a
Page 257 and 258: II.THEORY OF ELECTRON TRANSFER BETW
Page 259 and 260: For the specific case of charge tra
Page 261 and 262: dominates, the mobility is often fi
Page 263 and 264: where the constant A and the temper
Page 265 and 266: components of modulation which are
Page 267 and 268: nanocrystals [41], understanding ph
Page 269 and 270: and ionization potential through tw
Page 271 and 272: quantum dots. Furthermore, because
Page 273 and 274: For many applications, a host mater
Page 275 and 276: form blends with morphologies that
Page 277 and 278: Figure 11 Photoluminescence efficie
Page 279 and 280: Figure 12 (a) Room-temperature PIA
Page 281 and 282: discussed briefly in Section IV. Ch
Page 283 and 284: dithiolates to thiol-terminated DNA
Page 285: Films of passivated CdSe nanocrysta
Page 289 and 290: decay with stretched exponential ki
Page 291 and 292: siderably larger than might be esti
Page 293 and 294: dispersing CdSe nanocrystal chromop
Page 295 and 296: memory and charge storage effects [
Page 297 and 298: all) of the optically excited elect
Page 299 and 300: composites of nanocrystals and conj
Page 301 and 302: 55. Asbury, J.B.; Hao, E.C.; Wang,
Page 303 and 304: 108. Morgan, N.Y.; Leatherdale, C.A
Page 305 and 306: The approaches to fabrication of se
Page 307 and 308: Figure 1 Experimental realization o
Page 309 and 310: Due to this voltage division, the m
Page 311 and 312: Figure 3 Simulated tunneling spectr
Page 313 and 314: electron charging. In both positive
Page 315 and 316: Figure 5 shows the typical features
Page 317 and 318: Figure 7 Map of levels for InAs nan
Page 319 and 320: Figure 8 Scanning electron microsco
Page 321 and 322: D CB = 0.31 eV is thus obtained. On
Page 323 and 324: Figure 11 Correlation of optical an
Page 325 and 326: atomistic approach based on pseudop
Page 327 and 328: charging indicated that the tunneli
Page 329 and 330: capacitance values were also kept t
Page 331 and 332: could not be detected in the QD/DT/
Page 333 and 334: Figure 18 Tunneling conductanceF sp
Page 335 and 336: data in the inset of Fig. 19 repres
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corresponding to the s-like wave fu
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7. Grabert, H.; Devoret, M.H., Eds.
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66. Su, B.; Goldman, V.J.; Cunningh
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dimensional confinement are created
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Figure 1 Transmission electron micr
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The room-temperature absorption and
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narrower in samples with larger mea
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GaInP 2 QDs from a plot of the squa
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crystal, indicating lattice-matched
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Figure 5 Evolution of Stranski-Kras
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C. Efficient Anti-Stokes Photolumin
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Because HF treatment has been shown
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intensity of the PL when it is on a
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eV stems from recombining carriers
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Figure 16 Model to explain two-colo
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although this term is not rigorousl
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10 ps (about an order of magnitude
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electron relaxation is inhibited an
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QDs, the nature of the QD capping s
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QD solution. For an interdot distan
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emission spectra of the two individ
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Figure 23 Change of the PL intensit
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(viz. the absorbed light intensity)
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Figure 25Impact ionization in QDs.m
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prevent electron-hole recombination
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36. Miller, R.D.J.; McLendon, G.; N
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91. Vurgaftman, I.; Singh, J. Appl.
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139. Mićić, O.I.; Ahrenkiel, S.P.
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10Synthesis and Fabrication of Meta
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Figure 2 (A-C) Progression of HR-TE
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Figure 3 Schematic for gold nanocry
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Nanocrystal growth can occur by two
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on the other hand, provide an ensem
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Figure 6 (a) SAXS patterns for disp
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Figure 8 The gold nanocrystal film
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of the stabilizing ligand, and the
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successfully modeled the 2D island
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2. Steric Stabilization and a Soft
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are fully extended. Moving away fro
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Figure 11 High-resolution SEM image
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Figure 13 (A) Transmission electron
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function of the density of localize
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Figure 15 High-resolution SEM image
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thiol-capped nanocrystals [2]. The
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41. Ackerson, B.J. Nature 1993, 365
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with the effect of the particle com
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Figure 1a shows the surface plasmon
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Figure 2 (a) Ultraviolet-visible ab
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agents [34]. The short-wavelength b
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Figure 4 (a) Plot of the plasmon ab
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the framework of traditional Mie’
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show that effects due to the surrou
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is located at the position of the g
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Figure 8 Ultraviolet-visible absorp
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laser pulses while being mixed in t
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Figure 10 shows HR-TEM images of go
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final irradiation product. At the s
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following the laser excitation appe
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36. Papavassiliou, G.C. Prog. Solid
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particles to expand. Because the he
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was frequency doubled in a 1-mm B-
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Figure 2 Frequency of the acoustic
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Figure 3 Change in radius (DR/R) ve
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In this model, the electrons couple
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Figure 5 Transient bleach data for
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Figure 7 (a) Transient bleach data
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that the particles with >80% Au hav
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3. Del Fatti, N.; Valle´e, F.; Fly
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