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7. Guzelian, A.A.; Katari, J.E.B.; Kadavanich, A.V.; Banin, U.; Hamad, K.;Juban, E.; Alivisatos, A.P.; Wolters, R.H.; Arnold, C.C.; Heath, J.R. J. Phys.Chem. 1996, 100, 7212.8. Micíc´, O.I.; Curtis, C.J.; Jones, K.M.; Sprague, J.R.; Nozik, A.J. J. Phys. Chem.1994, 98, 4966.9. Micíc´, O.I.; Sprague, J.R.; Lu, Z.; Nozik, A.J. Appl. Phys. Lett. 1996, 68, 3150.10. Micíc´, O.I.; Cheong, H.M.; Fu, H.; Zunger, A.; Sprague, J.R.; Mascarenhas, A.;Nozik, A.J. J. Phys. Chem. B 1997, 101, 4904.11. Nozik, A.J. Annu. Rev. Phys. Chem. 2001, 52, 193.12. Langof, L.; Ehrenfreund, E.; Lifshitz, E.; Micíc´, O.I.; Nozik, A.J. J. Phys.Chem. B 2002, 106, 1606.13. Aubuchon, S.R.; McPhail, A.T.; Wells, R.L.; Giambra, J.A.; Browser, J.R.Chem. Mater. 1994, 6, 82.14. Wells, R.L.; Self, M.F.; McPhail, A.T.; Auuchon, S.R.; Wandenberg, R.C.;Jasinski, J.P. Organometallics 1993, 12, 2832.15. Rama Krishna, M.V.; Friesner, R.A. J. Chem. Phys. 1991, 95, 525.16. Pankove, J.I. Optical Processes in Semiconductors; Dover: New York, 1971.17. MacDougall, J.E.; Eckert, H.; Stucky, G.D.; Herron, N.; Wang, Y.; Moller, K.;Bein, T.; Cox, D. J. Am. Chem. Soc. 1989, 111, 8006.18. DeLong, M.C.; Ohlsen, W.D.; Viohl, I.; Taylor, P.C.; Olson, J.M. J. Appl.Phys. 1991, 70, 2780.19. Wei, S.-H.; Zunger, A. Phys. Rev. B 1989, 39, 3279.20. Wei, S.H.; Ferreira, L.G.; Zunger, A. Phys. Rev. B 1990, 41, 8240.21. Froyen, S.; Zunger, A. Phys. Rev. Lett. 1991, 66, 3132.22. Mascarenhas, A.; Olson, J.M. Phys. Rev. B 1990, 41, 9947.23. Horner, G.S.; Mascarenhas, A.; Froyen, S.; Alonso, R.G.; Bertness, K.A.;Olson, J.M. Phys. Rev. B 1993, 47, 4041.24. Olson, J.M.; Kurtz, S.R.; Kibbler, A.E.; Faine, P. Appl. Phys. Lett. 1990, 56,623.25. Micíc´, O.I.; Nozik, A.J. J. Lumin. 1996, 70, 95.26. Olshavsky, M.A.; Goldstein, A.N.; Alivisatos, A.P. J. Am. Chem. Soc. 1990,112, 9438.27. Uchida, H.; Curtis, C.J.; Kamat, P.V.; Jones, K.M.; Nozik, A.J. J. Phys. Chem.1992, 96, 1156.28. Nozik, A.J.; Uchida, H.; Kamat, P.V.; Curtis, C. Isr. J. Chem. 1993, 33, 15.29. Janik, J.F.; Wells, R.L. Chem. Mater. 1996, 8, 2708.30. Coffer, J.L.; Johnson, M.A.; Zhang, L.; Wells, R.L. Chem. Mater. 1997, 9, 2671.31. No¨th, H.; Konord, P.Z. Z. Naturforsch. 1997, 30b, 681.32. Micíc´, O.I.; Ahrenkiel, S.P.; Bertram, D.; Nozik, A.J. Appl. Phys. Lett. 1999,75, 478.33. Morkoc, H.; Strite, S.; Gao, G.B.; Lin, M.E.; Sverdlov, B.; Burns, M. J. Appl.Phys. 1994, 76, 1363.34. Micíc´, O.I.; Smith, B.B.; Nozik, A.J. J. Phys. Chem. 2000, 104, 12,149.35. Peng, X.; Schlamp, M.C.; Kadavanich, A.V.; Alivisatos, A.P. J. Am. Chem.Soc. 1997, 119, 7019.Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.
36. Miller, R.D.J.; McLendon, G.; Nozik, A.J.; Schmickler, W.; Willig, F. SurfaceElectron Transfer Processes; VCH: New York, 1995.37. Gaponenko, S.V. Optical Properties of Semiconductor Nanocrystals, CambridgeUniv. Press Cambridge, UK, 1998.37a. Sandmann, J.H.H.; Grosse, S.; von Plessen, G.; Feldmann, J.; Hayes, G.; Phillipps,R.; Lipsanen, H.; Sopanen, M.; Ahopelto, J. Phys. Status Solidi B 1997,204, 251.38. Eaglesham, D.J.; Cerullo, M. Phys. Rev. Lett. 1990, 64, 1943.39. Bimberg, D.; Grundmann, M.; Ledentsov, N.N. Quantum Dot Heterostructures;Wiley: Chichester, 1999.40. Guha, S.; Madhukar, A.; Rajkumar, K.C. Appl. Phys. Lett. 1990, 57, 2110.41. Snyder, C.W.; Orr, B.G.; Kessler, D.; Sander, L.M. Phys. Rev. Lett. 1991, 66,3032.42. Sugawara, M. In Semiconductors and Semimetals; Willardson R.K., Weber,E.R., Eds., Academic Press: San Diego, CA, 1999; Vol. 60.43. Yamaguchi, A.A.; Ahopelto, J.; Nishi, K.; Usui, A.; Akiyama, H.; Sakaki, H.Inst. Phys. Conf. Ser. 1992, 129, 341.44. Hanna, M.C.; Lu, Z.H.; Cahill, A.F.; Heben, M.J.; Nozik, A.J. J. Cryst.Growth 1997, 174, 605.45. Hanna, M.C.; Lu, Z.H.; Cahill, A.F.; Heben, M.J.; Nozik, A.J. Mater. Res. Soc.Symp.. Proc. 1996, 417, 129.46. Sopanen, M.; Lipsanen, H.; Ahopelto, J. Appl. Phys. Lett. 1995, 66, 2364.47. Lipsanen, H.; Sopanen, M.; Ahopelto, J. Phys. Rev. B 1995, 51, 13,868.48. Mićić, O.I.; Nozik, A.J.; Lifshitz, E.; Rajh, T.; Poluektov, O.G.; Thurnauer,M.C. J. Phys. Chem. 2002, 106, 4390.49. Fu, H.; Zunger, A. Phys. Rev. B 1997, 55, 1642.50. Fu, H.; Zunger, A. Phys. Rev. B 1997, 56, 1496.51. Poles, E.; Selmarten, D.C.; Micíc´, O.I.; Nozik, A.J. Appl. Phys. Lett. 1999, 75,971.52. Cheong, H.M.; Fluegel, B.; Hanna, M.C.; Mascarenhas, A. Phys. Rev. B 1998,58, R4254.53. Driessen, F.A.J.M.; Cheong, H.M.; Mascarenhas, A.; Deb, S.K. Phys. Rev. B1996, 54, R5263.54. Seidel, W.; Titkov, A.; Andre´, J.P.; Voisin, P.; Voos, M. Phys. Rev. Lett. 1994,73, 2356.55. Zegrya, G.G.; Kharchenko, V.A. Sov. Phys. JETP 1992, 74, 173.56. Dubois, L.H.; Schwartz, G.P. Phys. Rev. B 1982, 26, 794.57. Fu, H.; Ozolins, V.; Zunger, A. Phys. Rev. B 1999, 59, 2881.58. Nirmal, M.; Dabbousi, B.O.; Bawendi, M.G.; Macklin, J.J.; Trautman, J.K.;Harris, T.D.; Brus, L.E. Nature 1996, 383, 802.59. Tittel, J.; Gohde, W.; Koberling, F.; Mews, A.; Kornowski, A.; Weller, H.;Eychmuller, A.; Basche, T. Ber. Bunsenges. Phys. Chem. 1997, 101, 1626.60. Banin, U.; Bruchez, M.; Alivisatos, A.P.; Ha, T.; Weiss, S.; Chemla, D.S. J.Chem. Phys. 1999, 110, 1195.61. Kuno, M.; Fromm, D.P.; Hamann, H.F.; Gallagher, A.; Nesbitt, D.J. J. Chem.Phys. 2000, 112, 3117.Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.
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Copyright 2004 by Marcel Dekker, In
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This book covers several topics of
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esult, some exciting topics were no
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3. Fine Structure and Polarization
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9. III-V Quantum Dots and Quantum D
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ContributorsUri BaninThe Hebrew Uni
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1‘‘Soft’’ Chemical Synthesi
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structure of energy states leads to
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growth can proceed by Ostwald ripen
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Figure 3 Transmission electron micr
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Figure 4 Temporal evolution of the
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No. 26, are f85% (Fig. 6) [21]. Alt
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tion spectra and broad PL spectra.
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ing surface-to-volume ratio with di
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Figure 8 Photoluminescence spectra
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lattice mismatch. Such a large latt
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match between InAs and ZnS of f11%.
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successfully repeated for up to thr
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Under a different growth regime, on
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Figure 14 Atomic model of the CdSe
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‘‘Teardrop-shaped’’ particl
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Figure 17 High-resolution TEMs of C
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allows isolation of tetrapods in f8
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ligand concentrations yield a reduc
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een determined and quantitatively c
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tion volumes were also shown to be
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synthesis temperatures of z400jC ar
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Figure 23 (a) Photoluminescence spe
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levels (fV1 Mn per NQD). Despite in
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Figure 25 X-ray diffraction pattern
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Figure 27 Transmission electron mic
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An additional factor that strongly
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Figure 30 (a,b) Schematics illustra
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Slow, controlled precipitation of h
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Figure 34 Schematic illustrating th
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achieving biological compatibility
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47. Yu H.; Gibbons P.C.; Kelton K.F
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2Electronic Structure inSemiconduct
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Figure 2 (a) Simple model of a nano
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electron and hole to be treated as
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independently, Eq. (13) is commonly
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a better description of the bulk ba
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investigated. For optical experimen
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Figure 4 (a) Absorption (solid line
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Figure 6 Normalized PLE scans for s
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Figure 8 A simplistic model for des
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Figure 10 Theoretically predicted p
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Figure 12 Schematics depicting the
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Figure 14 Calculated band-edge exci
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Figure 15 Absorption (solid line) a
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Figure 18 (a) Calculated band-edge
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IV.BEYOND CdSeA. Indium Arsenide Na
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the six-band Luttinger Hamiltonian.
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11. Norris, D.J.; Efros, Al.L.; Ros
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69. Gaponenko, S.V.; Woggon, U.; Sa
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formation of a long-lived dark exci
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where the constant A is determined
Page 125 and 126:
In crystals for which the function
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The respective wave functions areC
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passive, as was shown in Ref. 12. T
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square of the matrix element of the
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where e F = e F ieV and e F F = e x
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see that for all nanocrystal shapes
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optical recombination of the excito
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B. Recombination of the Dark Excito
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where x = cos h and f = l B g e H/3
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The theory of the polarization memo
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Figure 7 The size dependence of the
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state would have an infinite lifeti
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crystal axis [see Eq. (40)]. As a r
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time of the exciton momentum relaxa
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One must also account for the influ
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observed in one of the first studie
Page 157 and 158:
REFERENCES1. Bawendi, M.G.; Wilson,
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4Intraband Spectroscopyand Dynamics
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The solid line in Fig. 1 shows the
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Figure 2 FTIR spectra of n-type CdS
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of the center frequency. The experi
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limit given by radiative relaxation
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from a long lifetime due to the pho
Page 171 and 172:
are two natural approaches to study
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32. Inoshita, T.; Sakaki, H. Physic
Page 175 and 176:
continuous spectral tunability over
Page 177 and 178:
function and envelope function mome
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ottleneck’’ [14,28]. Further re
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in NQDs is dominated by nonphonon e
Page 183 and 184:
Figure 4 Dynamics of the IR postpum
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Figure 5 (a) Time-resolved PL spect
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Figure 6 (a) The time delay of the
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and due to Auger-type e-h interacti
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Figure 9 Dynamics of the 1S bleachi
Page 193 and 194:
significantly greater than the fast
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Figure 11 (a) Pump-intensity-depend
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NQD size. For small NQD sizes (R =
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Figure 14 Nonlinear absorption/gain
Page 201 and 202:
sorption change associated with a s
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where n h em is the hole ‘‘emit
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ultrafast (subpicosecond to picosec
Page 207 and 208:
Figure 18 Schematic of transitions
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Figure 19 Dynamics of pump-induced
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where n i (i=1, 2 . . . , N ) is th
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Figure 21 (a) Two-e-h-pair (biexcit
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the volume fraction (filling factor
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intensity dependence of this peak (
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Page 221 and 222:
can contribute to the saturation of
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coupling between ‘‘volume’’
Page 227 and 228:
numerous discussions on the photoph
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53. Kang, K.; Kepner, A.; Gaponenko
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the ‘‘on-off ’’ emission in
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parallel form of data acquisition i
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Figure 3 (a) Spectral time trace of
Page 237 and 238:
transition energies. In fact, these
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distribution (dark line) does not d
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exposure to only room light. In our
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statistics for the off times are in
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230Shimizu and BawendiCopyright 200
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Figure 10 (a) Time trace of a CdSe(
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and excited QD core states to fluct
Page 251 and 252:
arrows indicate the on-time truncat
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W. K. Woo and V. C. Sundar for assi
Page 255 and 256:
size allows the electron affinity a
Page 257 and 258:
II.THEORY OF ELECTRON TRANSFER BETW
Page 259 and 260:
For the specific case of charge tra
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dominates, the mobility is often fi
Page 263 and 264:
where the constant A and the temper
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components of modulation which are
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nanocrystals [41], understanding ph
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and ionization potential through tw
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quantum dots. Furthermore, because
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For many applications, a host mater
Page 275 and 276:
form blends with morphologies that
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Figure 11 Photoluminescence efficie
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Figure 12 (a) Room-temperature PIA
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discussed briefly in Section IV. Ch
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dithiolates to thiol-terminated DNA
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Films of passivated CdSe nanocrysta
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Figure 16 Photocurrent action spect
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decay with stretched exponential ki
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siderably larger than might be esti
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dispersing CdSe nanocrystal chromop
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memory and charge storage effects [
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all) of the optically excited elect
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composites of nanocrystals and conj
Page 301 and 302:
55. Asbury, J.B.; Hao, E.C.; Wang,
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108. Morgan, N.Y.; Leatherdale, C.A
Page 305 and 306:
The approaches to fabrication of se
Page 307 and 308:
Figure 1 Experimental realization o
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Due to this voltage division, the m
Page 311 and 312:
Figure 3 Simulated tunneling spectr
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electron charging. In both positive
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Figure 5 shows the typical features
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Figure 7 Map of levels for InAs nan
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Figure 8 Scanning electron microsco
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D CB = 0.31 eV is thus obtained. On
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Figure 11 Correlation of optical an
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atomistic approach based on pseudop
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charging indicated that the tunneli
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capacitance values were also kept t
Page 331 and 332:
could not be detected in the QD/DT/
Page 333 and 334:
Figure 18 Tunneling conductanceF sp
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data in the inset of Fig. 19 repres
Page 337 and 338:
corresponding to the s-like wave fu
Page 339 and 340:
7. Grabert, H.; Devoret, M.H., Eds.
Page 341 and 342:
66. Su, B.; Goldman, V.J.; Cunningh
Page 343 and 344: dimensional confinement are created
Page 345 and 346: Figure 1 Transmission electron micr
Page 347 and 348: The room-temperature absorption and
Page 349 and 350: narrower in samples with larger mea
Page 351 and 352: GaInP 2 QDs from a plot of the squa
Page 353 and 354: crystal, indicating lattice-matched
Page 355 and 356: Figure 5 Evolution of Stranski-Kras
Page 357 and 358: Figure 7 Photoluminescence spectra
Page 359 and 360: Figure 8 Photoluminescence spectra
Page 361 and 362: C. Efficient Anti-Stokes Photolumin
Page 363 and 364: Because HF treatment has been shown
Page 365 and 366: Copyright 2004 by Marcel Dekker, In
Page 367 and 368: intensity of the PL when it is on a
Page 369 and 370: eV stems from recombining carriers
Page 371 and 372: Figure 16 Model to explain two-colo
Page 373 and 374: although this term is not rigorousl
Page 375 and 376: 10 ps (about an order of magnitude
Page 377 and 378: electron relaxation is inhibited an
Page 379 and 380: Figure 18 Transmission electron mic
Page 381 and 382: QDs, the nature of the QD capping s
Page 383 and 384: QD solution. For an interdot distan
Page 385 and 386: emission spectra of the two individ
Page 387 and 388: Figure 23 Change of the PL intensit
Page 389 and 390: (viz. the absorbed light intensity)
Page 391 and 392: Figure 25Impact ionization in QDs.m
Page 393: prevent electron-hole recombination
Page 397 and 398: 91. Vurgaftman, I.; Singh, J. Appl.
Page 399 and 400: 139. Mićić, O.I.; Ahrenkiel, S.P.
Page 401 and 402: 10Synthesis and Fabrication of Meta
Page 403 and 404: Figure 2 (A-C) Progression of HR-TE
Page 405 and 406: Figure 3 Schematic for gold nanocry
Page 407 and 408: Nanocrystal growth can occur by two
Page 409 and 410: on the other hand, provide an ensem
Page 411 and 412: Figure 6 (a) SAXS patterns for disp
Page 413 and 414: Figure 8 The gold nanocrystal film
Page 415 and 416: of the stabilizing ligand, and the
Page 417 and 418: successfully modeled the 2D island
Page 419 and 420: 2. Steric Stabilization and a Soft
Page 421 and 422: are fully extended. Moving away fro
Page 423 and 424: Figure 11 High-resolution SEM image
Page 425 and 426: Figure 13 (A) Transmission electron
Page 427 and 428: function of the density of localize
Page 429 and 430: Figure 15 High-resolution SEM image
Page 431 and 432: thiol-capped nanocrystals [2]. The
Page 433 and 434: 41. Ackerson, B.J. Nature 1993, 365
Page 435 and 436: with the effect of the particle com
Page 437 and 438: Figure 1a shows the surface plasmon
Page 439 and 440: Figure 2 (a) Ultraviolet-visible ab
Page 441 and 442: agents [34]. The short-wavelength b
Page 443 and 444: Figure 4 (a) Plot of the plasmon ab
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the framework of traditional Mie’
Page 447 and 448:
show that effects due to the surrou
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is located at the position of the g
Page 451 and 452:
Page 453 and 454:
Figure 8 Ultraviolet-visible absorp
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laser pulses while being mixed in t
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Figure 10 shows HR-TEM images of go
Page 459 and 460:
Page 461 and 462:
final irradiation product. At the s
Page 463 and 464:
following the laser excitation appe
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36. Papavassiliou, G.C. Prog. Solid
Page 467 and 468:
particles to expand. Because the he
Page 469 and 470:
was frequency doubled in a 1-mm B-
Page 471 and 472:
Figure 2 Frequency of the acoustic
Page 473 and 474:
Figure 3 Change in radius (DR/R) ve
Page 475 and 476:
In this model, the electrons couple
Page 477 and 478:
Figure 5 Transient bleach data for
Page 479 and 480:
Figure 7 (a) Transient bleach data
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that the particles with >80% Au hav
Page 483 and 484:
3. Del Fatti, N.; Valleé, F.; Fly
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