11.07.2015 Views

Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

SHOW MORE
SHOW LESS

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

observed in one of the first studies of small-size CdSe NCs [42,43]. This effectmay be due, for example, to the formation of an exciton–polaron that can be asource of an additional Stokes shift of the luminescence [38]. However, the‘‘polaronic’’ model does not explain the presence of a zero LO phonon line inthe absence of an external magnetic field. This line is strongly activated <strong>by</strong> thetemperature. The effect of the temperature on the relative intensities of zeroand phonon-assisted lines and PL decay times is very similar to the effect ofan external magnetic field [42,43]. Interaction with paramagnetic defects inthe lattice or surface dangling bonds can also provide an additional mechanismfor the dark-exciton recombination. The spins of these defects cangenerate strong effective internal magnetic fields (potentially several tens oftesla) and induce spin-flip-assisted transitions of the F2 state, enabling thezero-phonon recombination. The electron interaction with these spins canalso lead to the magnetic polaron formation, which may explain the temperature-dependentStokes shift.The electron-dangling bond spin interactions can also explain theunexpected temperature behavior of the dark-exciton g factor [36]. Similarto diluted magnetic semiconductors, the change in g ex in CdSe NCs can beinterpreted as arising from some exchange interaction. We therefore suggestthat temperature-dependent g factors in NCs may be due to the interactions ofuncompensated NC surface spins with photogenerated carriers within theNCs.ACKNOWLEDGMENTSI would like to thank my long-term collaborators A. I. Ekimov, A. Rodina,M. Rosen, M. G. Bawendi, D. Norris, M. Nirmal, K. Kuno, E. Johnston-Halperin, D. D. Awschalom, S. A. Crooker, P. Alivisatos, A. Nozik, and L.Brus for challenging and stimulating discussions which provided strongmotivation for theoretical studies reviewed in this chapter. I also thank M.Nirmal for providing figures. This work was supported <strong>by</strong> the Office of NavalResearch.APPENDIX: CALCULATION OF THE HOLE g FACTORThe expression for the g factor of a hole localized in a spherically symmetricpotential was obtained <strong>by</strong> Gel’mont and D’yakonov [29]:g h ¼ 4 5 c 1I 2 þ 8 5 cðI 41 I 2 Þ þ 2j 15 I 2ð62Þ<strong>Copyright</strong> <strong>2004</strong> <strong>by</strong> <strong>Marcel</strong> <strong>Dekker</strong>, <strong>Inc</strong>. <strong>All</strong> <strong>Rights</strong> <strong>Reserved</strong>.

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!