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Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

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3Fine Structure and PolarizationProperties of Band-Edge Excitonsin Semiconductor NanocrystalsAl. L. EfrosNaval Research Laboratory, Washington, D.C., U.S.A.I. INTRODUCTIONIt has been more than 10 years since the seminal paper of Bawendi et al. [1] onthe resonantly excited photoluminescence (PL) in CdSe nanocrystals (NCs).This first investigation showed that in the case of resonant excitation, the PLfrom CdSe NCs shows a fine structure that is Stokes shifted relative to thelowest absorption band. The fine-structure PL consists of a zero-phonon line(ZPL) and longitudinal optical (LO) phonon satellites. The lifetime of PL atlow temperatures is extremely long, on the order of 1000 ns. <strong>All</strong> of the majorproperties of the resonant PL in CdSe NCs have been described using thedark/bright-exciton model [2,3].In this chapter, we review the dark/bright-exciton model and summarizethe results of realistic multiband calculations of the band-edge exciton finestructure in quantum dots of semiconductors having a degenerate valenceband. These calculations take into account the effect of the electron–holeexchangeinteraction, nonsphericity of the crystal shape, and the intrinsichexagonal lattice asymmetry. We describe also the effect of an externalmagnetic field on the fine structure, the transition oscillator strengths, andpolarization properties of CdSe NCs. The results of these calculations areused to described unusual polarization properties of CdSe NCs, a size-dependentStokes shift of the resonant PL, a fine structure in absorption, and the<strong>Copyright</strong> <strong>2004</strong> <strong>by</strong> <strong>Marcel</strong> <strong>Dekker</strong>, <strong>Inc</strong>. <strong>All</strong> <strong>Rights</strong> <strong>Reserved</strong>.

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