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confined NQDs is not significantly slower than in bulk materials. These datafurther imply that the optical-gain buildup in NQDs is not inhibited by theefficiency of intraband energy losses.III.CARRIER TRAPPING AT INTERFACE STATES ANDEXCITED-STATE ABSORPTION IN NQDsA. Dynamics of Electron and Hole Surface TrappingAn important concern associated with light-emitting applications of NQDs isa high probability of carrier trapping at surface defects. For samples withincomplete surface passivation, surface trapping can lead to depopulation ofNQD quantized states on picosecond timescales leading to significantly reducedband-edge PL efficiencies [37]. We briefly review some results ofultrafast studies on electron and hole surface trapping. These studies wereperformed in the low-intensity excitation regime (less than one e–h pair perdot on average was excited) for which the role of fast multiparticle Augerrecombination (see Sec. IV. B) was insignificant.Electron trapping dynamics have been studied using primarily a femtosecondTA experiment [29,37]. At the stage following energy relaxation,bleacing of the lowest (1S) absorption peak is almost entirely due to thepopulation of the 1S electron state. The contribution of holes into thisbleaching is not significant because the hole state involved in the 1S transitionoriginates from a high-energy manifold of ‘‘absorbing’’ states that are notoccupied after energy relaxation is finished.The effect of the quality of surface passivation on electron dynamics isillustrated in Fig. 9, in which we compare the 1S bleaching decay for threesamples with distinctly different surface properties [37]. The samples arefreshly prepared NQDs passivated with organic molecules of trioctylphosphineoxide (TOPO) and trioctylphosphine (TOP) (TOPO-capped NQDs)(circles), the same NQDs but 8 months after preparation (squares), andfreshly prepared NQDs with ZnS overcoating (core–shell structures)(crosses). As indicated by the PL quantum yield measurements, the qualityof the ‘‘electronic’’ passivation of surface traps is progressively increased ingoing from the aged to the fresh TOPO-capped sample and then to the sampleovercoated with ZnS. For all samples, the 1S bleaching decay shows twodistinct regions: an initial region of fast sub-100-ps relaxation, which isfollowed by a slower nanosecond decay. The amplitude of the fast componentis sensitive to the NQD surface passivation, indicating that it is likely due tosurface-related electron relaxation. In freshly prepared TOPO-capped NQDs,the fast component is approximately 15% of the signal amplitude. Degradationin the surface passivation leads to an enhancement of this component upCopyright 2004 by Marcel Dekker, Inc. All Rights Reserved.
Figure 9 Dynamics of the 1S bleaching (2.26 eV) in 1.7-nm CdSe NQDs withdifferent surface properties: fresh (solid circles) and aged (open squares) TOPOcappedNQDs, and NQDs overcoated with a ZnS layer (crosses). Lines are fits to adouble-exponential decay.to f50% in the aged sample. On the other hand, overcoating with ZnS, whichimproves passivation of dangling bonds, leads to the reduction of the fastcomponent down to f7%.Because valence-band populations are not well pronounced in TAsignals detected using probe pulses resonant with interband (i.e., valence-toconductionband) transitions, hole dynamics have been studied using either aTA experiment with intraband probe pulses [43] or time-resolved PL [39]. Inthe case of intraband TA measurements, one can emphasize a hole contributionto detected signals by tuning the energy of the probe photon inresonance with a selected intraband hole transition [38]. The sensitivity of PLdynamics to hole trapping is due to the fact that removal of a hole from thevalence-band ‘‘emitting’’ state completely eliminates band-edge PL. However,because the removal of an electron from the 1S states has the sameeffect, extraction of hole dynamics from time-resolved PL traces may requireCopyright 2004 by Marcel Dekker, Inc. All Rights Reserved.
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Copyright 2004 by Marcel Dekker, In
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This book covers several topics of
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esult, some exciting topics were no
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3. Fine Structure and Polarization
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9. III-V Quantum Dots and Quantum D
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ContributorsUri BaninThe Hebrew Uni
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1‘‘Soft’’ Chemical Synthesi
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structure of energy states leads to
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growth can proceed by Ostwald ripen
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Figure 3 Transmission electron micr
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Figure 4 Temporal evolution of the
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No. 26, are f85% (Fig. 6) [21]. Alt
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tion spectra and broad PL spectra.
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ing surface-to-volume ratio with di
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Figure 8 Photoluminescence spectra
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lattice mismatch. Such a large latt
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match between InAs and ZnS of f11%.
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successfully repeated for up to thr
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Under a different growth regime, on
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Figure 14 Atomic model of the CdSe
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‘‘Teardrop-shaped’’ particl
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Figure 17 High-resolution TEMs of C
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allows isolation of tetrapods in f8
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ligand concentrations yield a reduc
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een determined and quantitatively c
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tion volumes were also shown to be
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synthesis temperatures of z400jC ar
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Figure 23 (a) Photoluminescence spe
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levels (fV1 Mn per NQD). Despite in
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Figure 25 X-ray diffraction pattern
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Figure 27 Transmission electron mic
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An additional factor that strongly
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Figure 30 (a,b) Schematics illustra
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Slow, controlled precipitation of h
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Figure 34 Schematic illustrating th
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achieving biological compatibility
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47. Yu H.; Gibbons P.C.; Kelton K.F
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2Electronic Structure inSemiconduct
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Figure 2 (a) Simple model of a nano
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electron and hole to be treated as
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independently, Eq. (13) is commonly
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a better description of the bulk ba
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investigated. For optical experimen
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Figure 4 (a) Absorption (solid line
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Figure 6 Normalized PLE scans for s
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Figure 8 A simplistic model for des
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Figure 10 Theoretically predicted p
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Figure 12 Schematics depicting the
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Figure 14 Calculated band-edge exci
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Figure 15 Absorption (solid line) a
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Figure 18 (a) Calculated band-edge
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IV.BEYOND CdSeA. Indium Arsenide Na
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the six-band Luttinger Hamiltonian.
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11. Norris, D.J.; Efros, Al.L.; Ros
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69. Gaponenko, S.V.; Woggon, U.; Sa
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formation of a long-lived dark exci
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where the constant A is determined
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In crystals for which the function
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The respective wave functions areC
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passive, as was shown in Ref. 12. T
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square of the matrix element of the
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where e F = e F ieV and e F F = e x
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see that for all nanocrystal shapes
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optical recombination of the excito
Page 139 and 140: B. Recombination of the Dark Excito
Page 141 and 142: where x = cos h and f = l B g e H/3
Page 143 and 144: The theory of the polarization memo
Page 145 and 146: Figure 7 The size dependence of the
Page 147 and 148: state would have an infinite lifeti
Page 149 and 150: crystal axis [see Eq. (40)]. As a r
Page 151 and 152: time of the exciton momentum relaxa
Page 153 and 154: One must also account for the influ
Page 155 and 156: observed in one of the first studie
Page 157 and 158: REFERENCES1. Bawendi, M.G.; Wilson,
Page 159 and 160: 4Intraband Spectroscopyand Dynamics
Page 161 and 162: The solid line in Fig. 1 shows the
Page 163 and 164: Figure 2 FTIR spectra of n-type CdS
Page 165 and 166: of the center frequency. The experi
Page 167 and 168: limit given by radiative relaxation
Page 169 and 170: from a long lifetime due to the pho
Page 171 and 172: are two natural approaches to study
Page 173 and 174: 32. Inoshita, T.; Sakaki, H. Physic
Page 175 and 176: continuous spectral tunability over
Page 177 and 178: function and envelope function mome
Page 179 and 180: ottleneck’’ [14,28]. Further re
Page 181 and 182: in NQDs is dominated by nonphonon e
Page 183 and 184: Figure 4 Dynamics of the IR postpum
Page 185 and 186: Figure 5 (a) Time-resolved PL spect
Page 187 and 188: Figure 6 (a) The time delay of the
Page 189: and due to Auger-type e-h interacti
Page 193 and 194: significantly greater than the fast
Page 195 and 196: Figure 11 (a) Pump-intensity-depend
Page 197 and 198: NQD size. For small NQD sizes (R =
Page 199 and 200: Figure 14 Nonlinear absorption/gain
Page 201 and 202: sorption change associated with a s
Page 203 and 204: where n h em is the hole ‘‘emit
Page 205 and 206: ultrafast (subpicosecond to picosec
Page 207 and 208: Figure 18 Schematic of transitions
Page 209 and 210: Figure 19 Dynamics of pump-induced
Page 211 and 212: where n i (i=1, 2 . . . , N ) is th
Page 213 and 214: Figure 21 (a) Two-e-h-pair (biexcit
Page 215 and 216: the volume fraction (filling factor
Page 217 and 218: intensity dependence of this peak (
Page 219 and 220: Copyright 2004 by Marcel Dekker, In
Page 221 and 222: can contribute to the saturation of
Page 223 and 224: Copyright 2004 by Marcel Dekker, In
Page 225 and 226: coupling between ‘‘volume’’
Page 227 and 228: numerous discussions on the photoph
Page 229 and 230: 53. Kang, K.; Kepner, A.; Gaponenko
Page 231 and 232: the ‘‘on-off ’’ emission in
Page 233 and 234: parallel form of data acquisition i
Page 235 and 236: Figure 3 (a) Spectral time trace of
Page 237 and 238: transition energies. In fact, these
Page 239 and 240: distribution (dark line) does not d
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exposure to only room light. In our
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statistics for the off times are in
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230Shimizu and BawendiCopyright 200
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Figure 10 (a) Time trace of a CdSe(
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and excited QD core states to fluct
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arrows indicate the on-time truncat
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W. K. Woo and V. C. Sundar for assi
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size allows the electron affinity a
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II.THEORY OF ELECTRON TRANSFER BETW
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For the specific case of charge tra
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dominates, the mobility is often fi
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where the constant A and the temper
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components of modulation which are
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nanocrystals [41], understanding ph
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and ionization potential through tw
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quantum dots. Furthermore, because
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For many applications, a host mater
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form blends with morphologies that
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Figure 11 Photoluminescence efficie
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Figure 12 (a) Room-temperature PIA
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discussed briefly in Section IV. Ch
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dithiolates to thiol-terminated DNA
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Films of passivated CdSe nanocrysta
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Figure 16 Photocurrent action spect
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decay with stretched exponential ki
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siderably larger than might be esti
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dispersing CdSe nanocrystal chromop
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memory and charge storage effects [
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all) of the optically excited elect
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composites of nanocrystals and conj
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55. Asbury, J.B.; Hao, E.C.; Wang,
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108. Morgan, N.Y.; Leatherdale, C.A
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The approaches to fabrication of se
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Figure 1 Experimental realization o
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Due to this voltage division, the m
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Figure 3 Simulated tunneling spectr
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electron charging. In both positive
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Figure 5 shows the typical features
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Figure 7 Map of levels for InAs nan
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Figure 8 Scanning electron microsco
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D CB = 0.31 eV is thus obtained. On
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Figure 11 Correlation of optical an
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atomistic approach based on pseudop
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charging indicated that the tunneli
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capacitance values were also kept t
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could not be detected in the QD/DT/
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Figure 18 Tunneling conductanceF sp
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data in the inset of Fig. 19 repres
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corresponding to the s-like wave fu
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7. Grabert, H.; Devoret, M.H., Eds.
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66. Su, B.; Goldman, V.J.; Cunningh
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dimensional confinement are created
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Figure 1 Transmission electron micr
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The room-temperature absorption and
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narrower in samples with larger mea
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GaInP 2 QDs from a plot of the squa
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crystal, indicating lattice-matched
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Figure 5 Evolution of Stranski-Kras
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C. Efficient Anti-Stokes Photolumin
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Because HF treatment has been shown
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intensity of the PL when it is on a
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eV stems from recombining carriers
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Figure 16 Model to explain two-colo
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although this term is not rigorousl
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10 ps (about an order of magnitude
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electron relaxation is inhibited an
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QDs, the nature of the QD capping s
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QD solution. For an interdot distan
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emission spectra of the two individ
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Figure 23 Change of the PL intensit
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(viz. the absorbed light intensity)
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Figure 25Impact ionization in QDs.m
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prevent electron-hole recombination
Page 395 and 396:
36. Miller, R.D.J.; McLendon, G.; N
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91. Vurgaftman, I.; Singh, J. Appl.
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139. Mićić, O.I.; Ahrenkiel, S.P.
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10Synthesis and Fabrication of Meta
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Figure 2 (A-C) Progression of HR-TE
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Figure 3 Schematic for gold nanocry
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Nanocrystal growth can occur by two
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on the other hand, provide an ensem
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Figure 6 (a) SAXS patterns for disp
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Figure 8 The gold nanocrystal film
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of the stabilizing ligand, and the
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successfully modeled the 2D island
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2. Steric Stabilization and a Soft
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are fully extended. Moving away fro
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Figure 11 High-resolution SEM image
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Figure 13 (A) Transmission electron
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function of the density of localize
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Figure 15 High-resolution SEM image
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thiol-capped nanocrystals [2]. The
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41. Ackerson, B.J. Nature 1993, 365
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with the effect of the particle com
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Figure 1a shows the surface plasmon
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Figure 2 (a) Ultraviolet-visible ab
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agents [34]. The short-wavelength b
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Figure 4 (a) Plot of the plasmon ab
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the framework of traditional Mie’
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show that effects due to the surrou
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is located at the position of the g
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Figure 8 Ultraviolet-visible absorp
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laser pulses while being mixed in t
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Figure 10 shows HR-TEM images of go
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final irradiation product. At the s
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following the laser excitation appe
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36. Papavassiliou, G.C. Prog. Solid
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particles to expand. Because the he
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was frequency doubled in a 1-mm B-
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Figure 2 Frequency of the acoustic
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Figure 3 Change in radius (DR/R) ve
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In this model, the electrons couple
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Figure 5 Transient bleach data for
Page 479 and 480:
Figure 7 (a) Transient bleach data
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that the particles with >80% Au hav
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3. Del Fatti, N.; Valle´e, F.; Fly
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