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Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

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Figure 5 Evolution of Stranski–Krastinow InP islands grown on (100) AlGaAs at620jC <strong>by</strong> MOCVD for increasing amounts of deposited InP [expressed as monolayers(ML)]. The scale of each scan is 2 2 Am.<strong>by</strong> about one island diameter, thus penetrating through the outer barrier andwell regions (see Fig. 6). This strain field will dilate the lattice of the QW andlower the bandgap beneath the S-K islands to produce a quantum dot withthree-dimensional confinement. One unique aspect of this QD is that the welland barrier regions are made of the same semiconductor. The S-K islands arereferred to as stressor islands; such types of stress-induced InGaAs and GaAsQDs have been reported for InP stressor islands on a GaAs/InGaAs/GaAsQW [46,47] and for InP stressor islands on an AlGaAs/GaAs/AlGaAs QW[44,45].III.UNIQUE OPTICAL PROPERTIESA. High-Efficiency Band-Edge PL in InP QDsRelatively intense band-edge emission from InP QDs can be achieved <strong>by</strong>etching the particles with a dilute alcoholic solution of HF [9]. The etching isdone <strong>by</strong> adding a methanolic solution containing 5% HF and 10% H 2 O to amixture of hexane and acetonitrile (1:1) that contains the InP QDs and 2–5%stabilizer. Two liquid phases are formed and the QDs are dispersed in theupper nonpolar phase of hexane, whereas HF, methanol, and H 2 O are inthe acetonitrile phase. The mixture is shaken and left overnight, and thenthe hexane phase with the colloids is separated and used.We believe that upon etching with HF or NH 4 F, fluoride ions fillphosphorus vacancies on the surface of the InP [48]. The intensity of theband-edge emission increases <strong>by</strong> more than a factor of 10. Figure 2 shows theabsorption and uncorrected emission spectra (excitation at 500 nm) at roomtemperature of 32-A˚ InP QDs before the HF treatment; Fig. 7 shows theroom-temperature absorption and uncorrected emission spectra of HFtreatedInP QDs with diameters of 30, 35, and 44 A˚ . The PL emission is at<strong>Copyright</strong> <strong>2004</strong> <strong>by</strong> <strong>Marcel</strong> <strong>Dekker</strong>, <strong>Inc</strong>. <strong>All</strong> <strong>Rights</strong> <strong>Reserved</strong>.

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