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Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

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could not be detected in the QD/DT/Au system, where, due to the effect ofcharging, it was pushed out to voltages beyond the limit of current saturationor the onset of field emission.V. TUNNELING AND OPTICAL SPECTROSCOPY OFCORE–SHELL NANOCRYSTAL QDsA. Synthesis of Highly Luminescent Core–Shell QDswith InAs CoresHarnessing the size-tunable emission of nanocrystals for real-world applicationssuch as biological fluorescence marking [14–16], lasers [10,11], and otheroptoelectronic devices [87,88] is an important challenge, which imposesstringent requirements of a high fluorescence quantum yield (QY) and ofstability against photodegradation. These characteristics are difficult toachieve in semiconductor nanocrystals coated <strong>by</strong> organic ligands due to imperfectsurface passivation. In addition, the organic ligands are labile forexchange reactions because of their weak bonding to the nanocrystal surfaceatoms [89]. A proven strategy for increasing both the fluorescence QY and thestability is to grow a shell of a higher-bandgap semiconductor on the corenanocrystal [32–38]. In such composite core–shell structures, the shell typeand shell thickness provide further control for tailoring the optical, electronic,electrical, and chemical properties of semiconductor nanocrystals.The preparation of the InAs core–shell nanocrystals is carried out in atwo-step process. In the first step, the InAs cores are prepared using theinjection method with TOP as solvent, which allowed us to obtain hundredsof milligrams of nanocrystals per synthesis. We used size-selective precipitationto improve the size distribution of cores to a f 10%. In the secondstep, shells of various materials were grown on these cores. A completereport on the synthesis method and characterization can be found elsewhere[24,36].An example for the flexible control on the QD optical propertiesafforded <strong>by</strong> shell growth is presented in Fig. 17. Here, two types of core–shell, InAs/ZnSe and InAs/CdSe, which emit strongly at 1.3 Am, wereprepared. The absorption and emission spectra for a CdSe shell overgrownon a core with a radius of 2.5 nm is shown in the left frame. The core bandgapemission is at 1220 nm, and with shell growth, the emission shifts to the red.This is accompanied <strong>by</strong> substantial enhancement of the QY, up to a value of17% achieved at 1306 nm. For ZnSe shells (right frame), the bandgap hardlyshifts. Using a larger core, with radius of 2.8 nm, we could achieve a high QYof 20% at 1298 nm <strong>by</strong> growing the ZnSe shell. In both cases, the shell providesimproved surface passivation, leading to an enhanced emission QY. The<strong>Copyright</strong> <strong>2004</strong> <strong>by</strong> <strong>Marcel</strong> <strong>Dekker</strong>, <strong>Inc</strong>. <strong>All</strong> <strong>Rights</strong> <strong>Reserved</strong>.

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