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Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.

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VII.CONCLUDING REMARKSThe combination of optical spectroscopy and scanning tunneling microscopyis proven to be a highly effective approach for studying the elctronic structureand tunneling transport properties of semiconductor nanocrystal QDs. Theatomiclike nature of the QDs is borne out both from the observation of theAufbau principle for sequential single-electron tunneling through the QDstates as well as from direct imaging of the quantum-confined envelope wavefunctions. Extending the atomic analogy further to include spin correlationeffects (e.g., Hund’s rule) will require the incorporation of magnetic fields inthe tunneling experiments. The methodology of combining optical andtunneling spectroscopy can also be extended to the study of artificial QDsolids such as close-packed superlattices of nanocrystals. Here, the discreteatomiclike QD states could evolve into miniband bulklike structures. Understandingthe level structure and tunneling transport properties is also essentialfor nanocrystal-based-device applications. Of particular relevance is theimplementation of nanocrystals in room-temperature single-electron optoelectronictunneling devices. Due to the small size, these QDs lie well withinthe strong confinement regime, and both the level spacings and the singleelectron charging energies are larger than k B T even at room temperature. Thecontrol of the relative contributions of the level structure and the chargingeffects will be an important ingredient in future QD devices.ACKNOWLEDGMENTSWe would like to thank Y.-W. Cao, S.-H. Kan, and D. Katz for theirimportant contributions to the work presented in this chapter. We also thankO. Agam, U. Landman, Y. Levi, Y.-M. Niquet, A. Sharoni, and A. Zungerfor stimulating discussions and suggestions. The work was supported in part<strong>by</strong> the Israel Academy of Science and Humanities and <strong>by</strong> Intel-Israel.REFERENCES1. Alivisatos, A.P. Science 1996, 271, 933.2. Brus, L.E. Appl. Phys. A 1991, 53, 465.3. Weller, H. Angew. Chem. Int. Ed. Engl. 1993, 32, 41.4. Nirmal, M.; Brus, L. Acc. Chem. Res. 1999, 32, 407.5. Collier, C.P.; Vossmeyer, T.; Heath, J.R. Annu Rev. Phys. Chem. 1998, 49, 371.6. Brus, L.E. J. Chem. Phys. 1984, 80, 4403.<strong>Copyright</strong> <strong>2004</strong> <strong>by</strong> <strong>Marcel</strong> <strong>Dekker</strong>, <strong>Inc</strong>. <strong>All</strong> <strong>Rights</strong> <strong>Reserved</strong>.

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