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24. Norris, D.J.; Efros, Al.L.; Rosen, M.; Bawendi, M.G. Phys Rev. B 1996, 53,16347.25. Conwell, E. High Field Transport in Semiconductors; New York: AcademicPress, 1967.26. Prabhu, S.; Vengurlekar, A.; Shah, J. Phys. Rev. B 1995, 51, 14,233.27. Klimov, V.; Haring Bolivar, P.; Kurz, H. Phys. Rev. B 1995, 52, 4728.28. Bockelmann, U.; Bastard, G. Phys. Rev. B 1990, 42, 8947.29. Klimov, V.I.; McBranch, D.W. Phys. Rev. Lett. 1998, 80, 4028.30. Guyot-Sionnest, P.; Shim, M.; Matranga, C.; Hines, M. Phys. Rev. B 1999,60, 2181.31. Klimov, V.I.; Mikhailovsky, A.A.; McBranch, D.W.; Leatherdale, C.A.;Bawendi, M.G. Phys. Rev. B 2000, 61, 13,349.32. Klimov, V.I. In Handbook on Nanostructured Materials and Nanotechnology;Nalwa, H.S. Ed.; San Diego, CA: Academic Press, 1999.33. Klimov, V.I. J. Phys. Chem. B 2000, 104, 6112.34. Sercel, P. Phys. Rev. B 1995, 51, 14,532.35. Bockelmann, U.; Egler, T. Phys. Rev. B 1992, 46, 15,574.36. Efros, A.L.; Kharhenko, V.A.; Rosen, M. Solid State Commun. 1995, 93,281.37. Klimov, V.I.; McBranch, D.W.; Leatherdale, C.A.; Bawendi, M.G. Phys.Rev. B 2000, 60, 13,740.38. Mikhailovsky, A.A.; Xu, S.; Klimov, V.I. Rev. Sci. Instrum. 2002, 73, 136.39. Xu, S.; Mikhailovsky, A.A.; Hollingsworth, J.A.; Klimov, V.I. Phys. Rev. B2002, 65, 53,191.40. Woggon, U.; Giessen, H.; Gindele, F.; Wind, O.; Fluegel, B.; Peyghambarian,N. Phys. Rev. B 1996, 54, 17,681.41. Shah, J. IEEE J. Quantum Electron 1988, 24, 276.42. Uskov, A.V.; Jauho, A.P.; Tromborg, B.; Mork, J.; Lang, R. Phys. Rev. Lett.2000, 85, 1516.43. Klimov, V.I.; Schwarz, C.J.; McBranch, D.W.; Letherdale, C.A.; Bawendi,M.G. Phys. Rev. B 1999, 60, 2177.44. Malko, A.V.; Hollingsworth, J.A.; Petruska, M.A.; Mikhailovsky, A.A.;Klimov, V.I., unpublished results.45. Ricard, D.; Ghanassi, M.; Schanneklein, M. Opt. Commun. 1994, 108, 311.46. Klimov, V.I.; Mikhailovsky, A.A.; Hollingsworth, J.A.; Malko, A.V.;Leatherdale, C.A.; Bawendi, M.G. Proc. Electrochem. Soc. 2001, 19, 321.47. Klimov, V.; Hunsche, S.; Kurz, H. Phys. Rev. B 1994, 50, 8110.48. Efros, A.L.; Rosen, M. Phys. Rev. B 1996, 54, 4843.49. Crooker, S.A.; Barrick, T.; Hollingsworth, J.A.; Klimov, V.I. Appl. Phys. Lett.2003, 82, 2793.50. Mikhailovsky, A.A.; Malko, A.V.; Hollingsworth, J.A.; Bawendi, M.G.;Klimov, V.I. Appl. Phys. Lett. 2002, 80, 2380.51. Hu, H.G.Y.; Peyghambarian, N.; Koch, S. Phys. Rev. B 1996, 53, 4814.52. Giessen, H.; Butty, J.; Woggon, U.; Fluegel, B.; Mohs, G.; Hu, Y.Z.; Koch,S.W.; Peyghambarian, N.; Koch, S. Phase Transitions 1999, 68, 59.Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.
53. Kang, K.; Kepner, A.; Gaponenko, S.; Koch, S.; Hu, Y.; Peyghambarian, N.Phys. Rev. B 1993, 48, 15,449.54. Shumway, J.; Franceschetti, A.; Zunger, A. Phys. Rev. B 2001, 63, 53,161.55. Chatterji, D. The Theory of Auger Transitions; London: Academic Press, 1976.56. Landsberg, P. Recombination in Semiconductors; Cambridge: Cambridge UniversityPress, 1991.57. Chepic, D.; Efros, Al.L.; Ekimov, A.; Ivanov, M.; Kharchenko, V.A.;Kudriavtsev, I. J. Lumin 1990, 47, 113.58. Kharchenko, V.A.; Rosen, M. J. Lumin 1996, 70, 158.59. Klimov, V.I.; Mikhailovsky, A.A.; Xu, S.; Malko, A.; Hollingsworth, J.A.;Leatherdale, C.A.; Eisler, H.J.; Bawendi, M.G. Science 2000, 290, 314.60. Kazes, M.; Lewis, D.Y.; Evenstein, Y.; Mokari, T.; Banin, U. Adv. Mater.2002, 14, 317.61. Shaklee, K.L.; Nahory, R.E.; Leheny, R.F. J. Lumin 1973, 7, 284.62. Malko, A.V.; Mikhailovsky, A.A.; Petruska, M.A.; Hollingsworth, J.A.;Htoon, H.; Bawendi, M.G.; Klimov, V.I. Appl. Phys. Lett. 2002, 81, 1303.63. Eisler, H.-J.; Sundar, V.C.; Bawendi, M.G.; Walsh, M.; Smith, H.I.; Klimov,V.I. Appl. Phys. Lett. 2002, 80, 4614.64. McCall, S.L.; Levi, A.F.; Slusher, R.E.; Pearton, S.J.; Logan, R.A. Appl. Phys.Lett. 1992, 60, 289.65. Murray, C.B.; Sun, S.; Gaschler, W.; Doyle, H.; Betley, T.A.; Kagan, C.R.IBM J. Res. Dev. 2001, 45, 47.66. Colvin, V.L.; Schlamp, M.C.; Alivisatos, A.P. Nature 1994, 370, 354.67. Dabbousi, B.O.; Bawendi, M.G.; Onitsuka, O.; Rubner, M.F. Appl. Phys. Lett.1995, 66, 1316.68. Tessler, N.; Medvedev, V.; Kazes, M.; Kan, S.; Banin, U. Science 2002, 295,1506.69. Htoon, H.; Hollingsworth, J.A.; Malko, A.V.; Dickerson, R.; Klimov, V.I.Appl. Phys. Lett. 2003, 82, 4776.70. Li, L.; Ho, J.; Yang, W.; Alivisatos, A.P. Nano Lett. 2001, 1, 349.71. Norris, D.J.; Yao, N.; Charnock, F.T.; Kennedy, T.A. Nano Lett. 2001, 1, 3.Copyright 2004 by Marcel Dekker, Inc. All Rights Reserved.
Page 1:
Copyright 2004 by Marcel Dekker, In
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This book covers several topics of
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esult, some exciting topics were no
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3. Fine Structure and Polarization
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9. III-V Quantum Dots and Quantum D
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ContributorsUri BaninThe Hebrew Uni
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1‘‘Soft’’ Chemical Synthesi
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structure of energy states leads to
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growth can proceed by Ostwald ripen
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Figure 3 Transmission electron micr
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Figure 4 Temporal evolution of the
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No. 26, are f85% (Fig. 6) [21]. Alt
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tion spectra and broad PL spectra.
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ing surface-to-volume ratio with di
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Figure 8 Photoluminescence spectra
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lattice mismatch. Such a large latt
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match between InAs and ZnS of f11%.
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successfully repeated for up to thr
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Under a different growth regime, on
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Figure 14 Atomic model of the CdSe
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‘‘Teardrop-shaped’’ particl
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Figure 17 High-resolution TEMs of C
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allows isolation of tetrapods in f8
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ligand concentrations yield a reduc
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een determined and quantitatively c
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tion volumes were also shown to be
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synthesis temperatures of z400jC ar
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Figure 23 (a) Photoluminescence spe
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levels (fV1 Mn per NQD). Despite in
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Figure 25 X-ray diffraction pattern
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Figure 27 Transmission electron mic
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An additional factor that strongly
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Figure 30 (a,b) Schematics illustra
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Slow, controlled precipitation of h
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Figure 34 Schematic illustrating th
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achieving biological compatibility
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47. Yu H.; Gibbons P.C.; Kelton K.F
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2Electronic Structure inSemiconduct
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Figure 2 (a) Simple model of a nano
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electron and hole to be treated as
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independently, Eq. (13) is commonly
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a better description of the bulk ba
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investigated. For optical experimen
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Figure 4 (a) Absorption (solid line
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Figure 6 Normalized PLE scans for s
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Figure 8 A simplistic model for des
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Figure 10 Theoretically predicted p
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Figure 12 Schematics depicting the
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Figure 14 Calculated band-edge exci
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Figure 15 Absorption (solid line) a
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Figure 18 (a) Calculated band-edge
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IV.BEYOND CdSeA. Indium Arsenide Na
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the six-band Luttinger Hamiltonian.
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11. Norris, D.J.; Efros, Al.L.; Ros
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69. Gaponenko, S.V.; Woggon, U.; Sa
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formation of a long-lived dark exci
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where the constant A is determined
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In crystals for which the function
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The respective wave functions areC
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passive, as was shown in Ref. 12. T
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square of the matrix element of the
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where e F = e F ieV and e F F = e x
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see that for all nanocrystal shapes
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optical recombination of the excito
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B. Recombination of the Dark Excito
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where x = cos h and f = l B g e H/3
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The theory of the polarization memo
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Figure 7 The size dependence of the
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state would have an infinite lifeti
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crystal axis [see Eq. (40)]. As a r
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time of the exciton momentum relaxa
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One must also account for the influ
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observed in one of the first studie
Page 157 and 158:
REFERENCES1. Bawendi, M.G.; Wilson,
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4Intraband Spectroscopyand Dynamics
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The solid line in Fig. 1 shows the
Page 163 and 164:
Figure 2 FTIR spectra of n-type CdS
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of the center frequency. The experi
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limit given by radiative relaxation
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from a long lifetime due to the pho
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are two natural approaches to study
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32. Inoshita, T.; Sakaki, H. Physic
Page 175 and 176:
continuous spectral tunability over
Page 177 and 178: function and envelope function mome
Page 179 and 180: ottleneck’’ [14,28]. Further re
Page 181 and 182: in NQDs is dominated by nonphonon e
Page 183 and 184: Figure 4 Dynamics of the IR postpum
Page 185 and 186: Figure 5 (a) Time-resolved PL spect
Page 187 and 188: Figure 6 (a) The time delay of the
Page 189 and 190: and due to Auger-type e-h interacti
Page 191 and 192: Figure 9 Dynamics of the 1S bleachi
Page 193 and 194: significantly greater than the fast
Page 195 and 196: Figure 11 (a) Pump-intensity-depend
Page 197 and 198: NQD size. For small NQD sizes (R =
Page 199 and 200: Figure 14 Nonlinear absorption/gain
Page 201 and 202: sorption change associated with a s
Page 203 and 204: where n h em is the hole ‘‘emit
Page 205 and 206: ultrafast (subpicosecond to picosec
Page 207 and 208: Figure 18 Schematic of transitions
Page 209 and 210: Figure 19 Dynamics of pump-induced
Page 211 and 212: where n i (i=1, 2 . . . , N ) is th
Page 213 and 214: Figure 21 (a) Two-e-h-pair (biexcit
Page 215 and 216: the volume fraction (filling factor
Page 217 and 218: intensity dependence of this peak (
Page 219 and 220: Copyright 2004 by Marcel Dekker, In
Page 221 and 222: can contribute to the saturation of
Page 223 and 224: Copyright 2004 by Marcel Dekker, In
Page 225 and 226: coupling between ‘‘volume’’
Page 227: numerous discussions on the photoph
Page 231 and 232: the ‘‘on-off ’’ emission in
Page 233 and 234: parallel form of data acquisition i
Page 235 and 236: Figure 3 (a) Spectral time trace of
Page 237 and 238: transition energies. In fact, these
Page 239 and 240: distribution (dark line) does not d
Page 241 and 242: exposure to only room light. In our
Page 243 and 244: statistics for the off times are in
Page 245 and 246: 230Shimizu and BawendiCopyright 200
Page 247 and 248: Figure 10 (a) Time trace of a CdSe(
Page 249 and 250: and excited QD core states to fluct
Page 251 and 252: arrows indicate the on-time truncat
Page 253 and 254: W. K. Woo and V. C. Sundar for assi
Page 255 and 256: size allows the electron affinity a
Page 257 and 258: II.THEORY OF ELECTRON TRANSFER BETW
Page 259 and 260: For the specific case of charge tra
Page 261 and 262: dominates, the mobility is often fi
Page 263 and 264: where the constant A and the temper
Page 265 and 266: components of modulation which are
Page 267 and 268: nanocrystals [41], understanding ph
Page 269 and 270: and ionization potential through tw
Page 271 and 272: quantum dots. Furthermore, because
Page 273 and 274: For many applications, a host mater
Page 275 and 276: form blends with morphologies that
Page 277 and 278: Figure 11 Photoluminescence efficie
Page 279 and 280:
Figure 12 (a) Room-temperature PIA
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discussed briefly in Section IV. Ch
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dithiolates to thiol-terminated DNA
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Films of passivated CdSe nanocrysta
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Figure 16 Photocurrent action spect
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decay with stretched exponential ki
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siderably larger than might be esti
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dispersing CdSe nanocrystal chromop
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memory and charge storage effects [
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all) of the optically excited elect
Page 299 and 300:
composites of nanocrystals and conj
Page 301 and 302:
55. Asbury, J.B.; Hao, E.C.; Wang,
Page 303 and 304:
108. Morgan, N.Y.; Leatherdale, C.A
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The approaches to fabrication of se
Page 307 and 308:
Figure 1 Experimental realization o
Page 309 and 310:
Due to this voltage division, the m
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Figure 3 Simulated tunneling spectr
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electron charging. In both positive
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Figure 5 shows the typical features
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Figure 7 Map of levels for InAs nan
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Figure 8 Scanning electron microsco
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D CB = 0.31 eV is thus obtained. On
Page 323 and 324:
Figure 11 Correlation of optical an
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atomistic approach based on pseudop
Page 327 and 328:
charging indicated that the tunneli
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capacitance values were also kept t
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could not be detected in the QD/DT/
Page 333 and 334:
Figure 18 Tunneling conductanceF sp
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data in the inset of Fig. 19 repres
Page 337 and 338:
corresponding to the s-like wave fu
Page 339 and 340:
7. Grabert, H.; Devoret, M.H., Eds.
Page 341 and 342:
66. Su, B.; Goldman, V.J.; Cunningh
Page 343 and 344:
dimensional confinement are created
Page 345 and 346:
Figure 1 Transmission electron micr
Page 347 and 348:
The room-temperature absorption and
Page 349 and 350:
narrower in samples with larger mea
Page 351 and 352:
GaInP 2 QDs from a plot of the squa
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crystal, indicating lattice-matched
Page 355 and 356:
Figure 5 Evolution of Stranski-Kras
Page 357 and 358:
Page 359 and 360:
Page 361 and 362:
C. Efficient Anti-Stokes Photolumin
Page 363 and 364:
Because HF treatment has been shown
Page 365 and 366:
Page 367 and 368:
intensity of the PL when it is on a
Page 369 and 370:
eV stems from recombining carriers
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Figure 16 Model to explain two-colo
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although this term is not rigorousl
Page 375 and 376:
10 ps (about an order of magnitude
Page 377 and 378:
electron relaxation is inhibited an
Page 379 and 380:
Page 381 and 382:
QDs, the nature of the QD capping s
Page 383 and 384:
QD solution. For an interdot distan
Page 385 and 386:
emission spectra of the two individ
Page 387 and 388:
Figure 23 Change of the PL intensit
Page 389 and 390:
(viz. the absorbed light intensity)
Page 391 and 392:
Figure 25Impact ionization in QDs.m
Page 393 and 394:
prevent electron-hole recombination
Page 395 and 396:
36. Miller, R.D.J.; McLendon, G.; N
Page 397 and 398:
91. Vurgaftman, I.; Singh, J. Appl.
Page 399 and 400:
139. Mićić, O.I.; Ahrenkiel, S.P.
Page 401 and 402:
10Synthesis and Fabrication of Meta
Page 403 and 404:
Figure 2 (A-C) Progression of HR-TE
Page 405 and 406:
Figure 3 Schematic for gold nanocry
Page 407 and 408:
Nanocrystal growth can occur by two
Page 409 and 410:
on the other hand, provide an ensem
Page 411 and 412:
Figure 6 (a) SAXS patterns for disp
Page 413 and 414:
Figure 8 The gold nanocrystal film
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of the stabilizing ligand, and the
Page 417 and 418:
successfully modeled the 2D island
Page 419 and 420:
2. Steric Stabilization and a Soft
Page 421 and 422:
are fully extended. Moving away fro
Page 423 and 424:
Figure 11 High-resolution SEM image
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Figure 13 (A) Transmission electron
Page 427 and 428:
function of the density of localize
Page 429 and 430:
Figure 15 High-resolution SEM image
Page 431 and 432:
thiol-capped nanocrystals [2]. The
Page 433 and 434:
41. Ackerson, B.J. Nature 1993, 365
Page 435 and 436:
with the effect of the particle com
Page 437 and 438:
Figure 1a shows the surface plasmon
Page 439 and 440:
Figure 2 (a) Ultraviolet-visible ab
Page 441 and 442:
agents [34]. The short-wavelength b
Page 443 and 444:
Figure 4 (a) Plot of the plasmon ab
Page 445 and 446:
the framework of traditional Mie’
Page 447 and 448:
show that effects due to the surrou
Page 449 and 450:
is located at the position of the g
Page 451 and 452:
Page 453 and 454:
Figure 8 Ultraviolet-visible absorp
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laser pulses while being mixed in t
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Figure 10 shows HR-TEM images of go
Page 459 and 460:
Page 461 and 462:
final irradiation product. At the s
Page 463 and 464:
following the laser excitation appe
Page 465 and 466:
36. Papavassiliou, G.C. Prog. Solid
Page 467 and 468:
particles to expand. Because the he
Page 469 and 470:
was frequency doubled in a 1-mm B-
Page 471 and 472:
Figure 2 Frequency of the acoustic
Page 473 and 474:
Figure 3 Change in radius (DR/R) ve
Page 475 and 476:
In this model, the electrons couple
Page 477 and 478:
Figure 5 Transient bleach data for
Page 479 and 480:
Figure 7 (a) Transient bleach data
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that the particles with >80% Au hav
Page 483 and 484:
3. Del Fatti, N.; Valle´e, F.; Fly
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