Scientific and Technical Aerospace Reports Volume 38 July 28, 2000

Added Analysis (Risk Reduction); 6) Value Added Analysis (Cost); 7) Impact of COTS ++ Screening; and 8) Summary. This paper
is presented in viewgraph form.
CASI
Hardware; NASA Programs; Electronic Equipment
20000063534 Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA USA
Outline: Recent work at JPL Under MSREP
[2000]; 14p; In English; No Copyright; Avail: CASI; A03, Hardcopy; A01, Microfiche
MSREP is a multi-faceted program with radiation effects in new technologies, development of testing and hardness assurance
methods, continual evaluation of space and laboratory test data and support to NASA Projects. Other work in progress includes:
1) Device Scaling and New Phenomena; 2) Radiation Effects in Microprocessors; 3) Latchup Testing and Latchup Mitigation;
and 4) Revised Radiation Design Approaches. This paper is in viewgraph form.
CASI
NASA Programs; Microelectronics; Electronic Equipment Tests
20000064072 Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA USA
On-Wafer Testing of Circuits Through 220 GHz
Gaier, Todd, Jet Propulsion Lab., California Inst. of Tech., USA; Samoska, Lorene, Jet Propulsion Lab., California Inst. of Tech.,
USA; Oleson, Charles, Oleson Microwave Labs.; Boll, Greg, GGB Industries; [1999]; 16p; In English; No Copyright; Avail:
CASI; A03, Hardcopy; A01, Microfiche
We have jointly developed the capability to perform on-wafer s-parameter and noise figure measurements through 220 GHz.
S-parameter test sets have been developed covering full waveguide bands of 90-140 GHz (WR-08) and 140-220 GHz (WR-05).
The test sets have been integrated with coplanar probes to allow accurate measurements on-wafer. We present the design and performance
of the test sets and wafer probes. We also present calibration data as well as measurements of active circuits at frequencies
as high as 215 GHz.
Author
Wafers; Evaluation; Circuits
20000064073 Jet Propulsion Lab., California Inst. of Tech., Pasadena, CA USA
160-190 GHz Monolithic Low Noise Amplifiers
Kok, Y. L., TRW Space and Electronics Group, USA; Wang, H., TRW Space and Electronics Group, USA; Huang, T. W., TRW
Space and Electronics Group, USA; Lai, R., TRW Space and Electronics Group, USA; Chen, Y. C., TRW Space and Electronics
Group, USA; Sholley, M., TRW Space and Electronics Group, USA; Block, T., TRW Space and Electronics Group, USA; Streit,
D. C., TRW Space and Electronics Group, USA; Liu, P. H., TRW Space and Electronics Group, USA; Allen, B. R., TRW Space
and Electronics Group, USA; Samoska, L., Jet Propulsion Lab., California Inst. of Tech., USA; Gaier, T., Jet Propulsion Lab.,
California Inst. of Tech., USA; Barsky, Mike, TRW Space and Electronics Group, USA; [1998]; 7p; In English; No Copyright;
Avail: CASI; A02, Hardcopy; A01, Microfiche
This paper presents the results of two 160-190 GHz monolithic low noise amplifiers (LNAs) fabricated with 0.07-microns
pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology using a reactive ion etch (RIE) via hole process. A peak small signal
gain of 9 dB was measured at 188 GHz for the first LNA with a 3-dB bandwidth from 164 to 192 GHz while the second LNA
has achieved over 6-dB gain from 142 to 180 GHz. The same design (second LNA) was also fabricated with 0.08-micron gate
and a wet etch process, showing a small signal gain of 6 dB with noise figure 6 dB. All the measurement results were obtained
via on-wafer probing. The LNA noise measurement at 170 GHz is also the first attempt at this frequency.
Author
Low Noise; Preamplifiers; Noise Measurement; Microwave Amplifiers; Transferred Electron Devices
20000064092 NASA Lewis Research Center, Cleveland, OH USA
The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits
Ponchak, George E., NASA Lewis Research Center, USA; Alterovitz, Samuel A., NASA Lewis Research Center, USA; Katehi,
Linda P. B., Michigan Univ., USA; Bhattacharya, Pallab K., Michigan Univ., USA; Directions for the Next Generation of MMIC
Devices and Systems; 1997, pp. 223-230; In English
Contract(s)/Grant(s): RTOP 632-6E-51; Copyright; Avail: Issuing Activity
Historically, microwave technology was developed by military and space agencies from around the world to satisfy their
unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the
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