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Scientific and Technical Aerospace Reports Volume 38 July 28, 2000

Scientific and Technical Aerospace Reports Volume 38 July 28, 2000

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performance of the microwave circuits <strong>and</strong> components comprising the systems. For example, power amplifiers with output powers<br />

of several watts over broad b<strong>and</strong>widths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators<br />

with low noise characteristics <strong>and</strong> high output power, <strong>and</strong> electronically steerable antennas were required. In addition, the reliability<br />

of the systems had to be increased because of the high monetary <strong>and</strong> human cost if a failure occurred. to achieve these goals,<br />

industry, academia <strong>and</strong> the government agencies supporting them chose to develop technologies with the greatest possibility of<br />

surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics<br />

that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs<br />

Metal Semiconductor Field Effect Transistors (MESFETs) <strong>and</strong> ending with InP Pseudomorphic High Electron Mobility Transistors<br />

(PHEMTs). For each new material or device structure, the electron mobility increased, <strong>and</strong> therefore, the high frequency characteristics<br />

of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the<br />

gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the<br />

millimeter-wave spectrum.<br />

Derived from text<br />

Technology Assessment; Microwave Circuits; Millimeter Waves; Logic Circuits; High Electron Mobility Transistors; Silicon;<br />

Germanium; Field Effect Transistors<br />

<strong>2000</strong>0064111 DYNACS Engineering Co., Inc., Brook Park, OH USA<br />

Suspended Patch Antenna Array With Electromagnetically Coupled Inverted Microstrip Feed<br />

Simons, Rainee N., DYNACS Engineering Co., Inc., USA; May <strong>2000</strong>; 10p; In English; 6th; Ka B<strong>and</strong> Utilization, 31 May - 2 Jun.<br />

<strong>2000</strong>, Clevel<strong>and</strong>, OH, USA; Sponsored by Istituto Internazionale delle Comunicazioni, Italy<br />

Contract(s)/Grant(s): NAS3-98008; RTOP 632-6E-51<br />

Report No.(s): NASA/CR-<strong>2000</strong>-210069; E-12247; NAS 1.26:210069; No Copyright; Avail: CASI; A02, Hardcopy; A01, Microfiche<br />

The paper demonstrates a four-element suspended patch antenna array, with a parasitic patch layer <strong>and</strong> an electromagnetically<br />

coupled inverted microstrip feed, for linear polarization at K-B<strong>and</strong> frequencies. This antenna has the following advantages over<br />

conventional microstrip antennas: First, the inverted microstrip has lower attenuation than conventional microstrip; hence, conductor<br />

loss associated with the antenna corporate feed is lower resulting in higher gain <strong>and</strong> efficiency. Second, conventional proximity<br />

coupled patch antennas require a substrate for the feed <strong>and</strong> a superstrate for the patch. However, the inverted microstrip fed<br />

patch antenna makes use of a single substrate, <strong>and</strong> hence, is lightweight <strong>and</strong> low cost. Third, electromagnetic coupling results in<br />

wider b<strong>and</strong>width. Details regarding the design <strong>and</strong> fabrication will be presented as well as measured results including return loss,<br />

radiation patterns <strong>and</strong> cross-polarization levels.<br />

Author<br />

Antenna Arrays; Performance Tests; Antenna Radiation Patterns; Cross Polarization; Fabrication; Linear Polarization; Patch<br />

Antennas<br />

<strong>2000</strong>0064661 Abdus Salam International Centre for Theoretical Physics, Trieste, Italy<br />

Second harmonics <strong>and</strong> compensation effect in ceramic superconductors<br />

Mai Suan Li,; Sep. 30, 1998; 10p; In English<br />

Report No.(s): DE99-609737; IC-98/141; No Copyright; Avail: Department of Energy Information Bridge<br />

The nonlinear Alternating Current (AC) susceptibility <strong>and</strong> the compensation effect observed in ceramic superconductors<br />

which show the paramagnetic Meissner effect are studied by the Monte Carlo simulations on a three dimensional lattice model<br />

of the Josephson array with finite self-conductance. Our study is based on the possible existence of the chiral glass phase in these<br />

materials. In agreement with experiments, the compensation effect is demonstrated to be present in d-wave superconductors but<br />

not in the s-wave ones.<br />

NTIS<br />

Harmonics; Compensation; High Temperature Superconductors<br />

<strong>2000</strong>0064722 Naval Surface Warfare Center, Dahlgren Div., Dahlgren, VA USA<br />

Electronic Equipment H<strong>and</strong>book on Methods for Meeting U.S. Navy Shipboard Electrical Power Interface Requirements<br />

Final Report<br />

Hall, James R.; Apr. <strong>2000</strong>; 26p; In English<br />

Report No.(s): AD-A377030; NSWCDD/TR-00/33; No Copyright; Avail: CASI; A03, Hardcopy; A01, Microfiche<br />

This h<strong>and</strong>book provides guidance for the implementation of electronic equipment suitable for U.S. Navy shipboard applications.<br />

The primary focus of this h<strong>and</strong>book is on the electrical power interface between combat systems equipment <strong>and</strong> U.S. Navy<br />

74

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