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PIC16F8X, 18-Pin FLASH/EEPROM 8-Bit MCU Data Sheet - Microchip

PIC16F8X, 18-Pin FLASH/EEPROM 8-Bit MCU Data Sheet - Microchip

PIC16F8X, 18-Pin FLASH/EEPROM 8-Bit MCU Data Sheet - Microchip

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<strong>PIC16F8X</strong> PIC16F83/84<br />

11.4 DC CHARACTERISTICS: PIC16F84, PIC16F83 (Commercial, Industrial)<br />

PIC16LF84, PIC16F83 (Commercial, Industrial)<br />

DC Characteristics<br />

All <strong>Pin</strong>s Except<br />

Power Supply <strong>Pin</strong>s<br />

Standard Operating Conditions (unless otherwise stated)<br />

Operating temperature 0°C ≤ TA ≤ +70°C (commercial)<br />

-40°C ≤ TA ≤ +85°C (industrial)<br />

Operating voltage VDD range as described in DC spec<br />

Section 11.1 and Section 11.2.<br />

Parameter<br />

No.<br />

Sym Characteristic<br />

Capacitive Loading Specs<br />

on Output <strong>Pin</strong>s<br />

Min Typ† Max Units Conditions<br />

D100 COSC2 OSC2 pin — — 15 pF In XT, HS and LP modes<br />

when external clock is used to<br />

drive OSC1.<br />

D101 CIO All I/O pins and OSC2<br />

(RC mode)<br />

<strong>Data</strong> <strong>EEPROM</strong> Memory<br />

— — 50 pF<br />

D120 ED Endurance 1M 10M — E/W 25°C at 5V<br />

D121 VDRW VDD for read/write VMIN — 6.0 V VMIN = Minimum operating<br />

voltage<br />

D122 TDEW Erase/Write cycle time<br />

Program Flash Memory<br />

— 10 20* ms<br />

D130 EP Endurance 100 1000 — E/W<br />

D131 VPR VDD for read VMIN — 6.0 V VMIN = Minimum operating<br />

voltage<br />

D132 VPEW VDD for erase/write 4.5 — 5.5 V<br />

D133 TPEW Erase/Write cycle time — 10 — ms<br />

* These parameters are characterized but not tested.<br />

† <strong>Data</strong> in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance only<br />

and are not tested.<br />

DS30430C-page 80 © 1998 <strong>Microchip</strong> Technology Inc.

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