254 PublicacionesJ. L. MOVILLA AND J. PLANELLES PHYSICAL REVIEW B 74, 125322 2006out. <strong>It</strong> was also shown that, under specific conditions, theattractive self-polarization potential well is able to confinecarriers in surface states, these surface states could even beenlocated on the barrier side of the interface. 27–29 On theirhand, Orlandi et al. 28 pointed out that these surface statesmay yield many-body ground state reconstructions that couldbe monitored, in turn, by transport experiments.The formation of surface states is more likely when one ofthe media involved is air or a vacuum because the depth ofthe attractive self-polarization potential well of a sphericalQD in a given medium is related to 1/ –1/ /R, and being, respectively, the higher and the lower dielectricconstants of the media involved, and R the QD radius. <strong>It</strong>should be mentioned that we recently found that the selfpolarizationwell can induce electron trapping in air-fillednanocavities of semiconductor matrices, despite the barrieractingnature of air. 30 Within these surface states the carriersundergo a strong radial localization, yielding a particular scenarioin which inter-particle Coulomb interactions can haveimportant effects on the system dynamics, as we showed inanother recent paper, 29 where the influence of image chargeson the electron correlation in two-electron spherical QDs wasthoroughly investigated. <strong>It</strong> is shown there that we may facetwo different limit situations of large dielectric mismatch inducinglocalization of both electrons in a thin sphericalcrown at the QD border. Namely, QD out and QD out .In either case, the spherical crown is located inside/outsidethe QD, respectively. When electrons are located inside theybehave almost as independent particles while outside theystrongly correlate. As the degree of confinement is similar inboth cases and the inner/outer effective masses employed inthe studied systems are of the same order, the kinetic energyshould also be similar. Hence, it is concluded that, while inthe first case the electron-electron interaction is negligible incomparison to the kinetic energy, in the second case the oppositeshould hold. 29 As the electron-electron interaction includesboth bare Coulomb plus polarization terms, what musthappen is that polarization worked against bare Coulomb inthe case of electrons inside while enforced it in the outsidecase, as can be qualitatively understood from an elementaryelectrostatic analysis. 35In this paper we will show that if the QD is highly insulatinge.g., QD 4 for a 5.35 nm QD radius confined by a0.9 eV confining barrier height, no surface states can beachieved when this QD is embedded in air or a vacuum,accordingly to previously reported results. 28,29 On bypassingthis dielectric constant threshold, a sudden increase in theangular correlation occurs as the electrons, confined in anarrow crown at the external side of the QD border, exhibit astrong tendency to avoid each other. <strong>It</strong> is then found that as QD keeps growing, a monotonous decrease in the angularcorrelation occurs. We rationalize this finding by looking atthe limit case of a conductor QD QD =, where the strongsurface positive polarization charge induced by one electronclose to its location, and the corresponding negative chargethat it also induces on the opposite site at the QD surface,work against the charge of this electron which is pushing thesecond electron away. As a result, the angular correlationdecreases. We will show that similar, but enhanced, behavioris found in a two-electron system in a spherical cavity of asemiconductor matrix. Similarities and differences betweenthe two cases are discussed. Finally, we present a comprehensivestudy on the influence of image charges on electroncorrelation and interaction energies of a weakly confined D −center two electrons bounded to a hydrogenic donor impurityin a semiconductor QD surrounded by air or a vacuum.We show that the combination of one- and two-particle contributionsof the dielectric confinement leads to different situationsin each system under study, above all when the electronicdensity is localized in a surface state.II. THEORETICAL OUTLINEWe will focus our study on the ground state 1 S g energiesand wave functions of spherical nanostructures containingtwo interacting conduction band electrons. We employ EMAand a macroscopiclike description of the screening of carriers.Thus, a parameter, the dielectric constant, characterizesthe dielectric response of each medium that is involved. Thereliability of this approach has been well established forzero-dimensional heterostructures similar to those presentedhere. 25,31The Hamiltonian for two interacting conduction bandelectrons reads, in atomic units a.u.,Hr 1 ,r 2 = H j r j + V c r 1 ,r 2 .j=1,2V c r 1 ,r 2 stands for the generalized Coulomb electronelectroninteraction, including dielectric mismatch effects.This term can be obtained by solving the Poisson equation,which presents an analytical solution for spherically symmetricQDs when a r=r steplike dielectric function is assumed.The explicit expressions for V c r 1 ,r 2 are given inRef. 6. H j r j represents the one-particle conduction bandHamiltonian of the systemH j r j =− 1 2 1m * r j + Vr j + V s r j + ZV I r j .The first term on the right-hand side of Eq. 2 representsthe variable mass hermitic kinetic energy operator. 32,33 Asteplike function is employed for the effective mass in orderto account for different masses in different materials m i * andm 0 * for the confined and the surrounding medium, respectively.Vr j is a steplike function representing the finitespatial confining potential due to the band offset between themedia involved. Since, in all the cases studied, the media areair or a vacuum and a semiconductor, the depth of theconfining well V 0 is given by the semiconductor electroaffinity.The origin of energies has been set at the bottom of thesemiconductor conduction band. V s r j stands for the selfpolarizationpotential induced by the dielectric mismatch,which can be obtained from V c r 1 ,r 2 asV s r j = 1 2 V cr j ,r j ,after excluding the bare Coulomb terms. A smooth variation123125322-2
Confinamiento dieléctrico 255DIELECTRIC MISMATCH EFFECTS IN TWO-ELECTRON…of the dielectric constant at the interface has been employedin order to bypass the non-integrability of Eq. 2 when asteplike dielectric function and a finite confinement barrieroccur simultaneously. A cosine-like profile within a layer atthe interface with a width of 0.3 nm the order of a latticeconstant is assumed. We have found that, as in Ref. 6, selfenergyeffects are nearly no sensitive to the smoothing modeland to small changes in the interface width.Finally, V I r j is the Coulomb potential including polarizationgenerated by a shallow donor impurity located at theoriginV I r j =− 1 i r j−1 0− 1 i 1 Rif r R,− 1 0 r jif r R,4where R stands for the interface radius, and i and 0 are thedielectric constants of the confined and surrounding media,respectively. Z in Eq. 2 is 1 0 when the impurity is includedexcluded.The spherical symmetry of the problem allows the angularcoordinates of the electron to be integrated analytically inEq. 2. The radial parts of the exact one-particle wave functions nlm r and the corresponding energies are obtained bymeans of numerical integration finite differences in a gridextended far beyond the interface radius R. The numericalnature of this integration requires the discretization of thecontinuous r function yielding a multistep profile withinthe interfacial layer, so that new, artificially introduced divergencesare encountered. Such numerical divergences havebeen overcome by means of a discretization scheme thatavoids calculating at the interfaces. 34Products of the basis functions nlm are then used to constructconfiguration-interaction CI expansions LS = j jof the symmetry- and spin-adapted two-electron configurations,where L and S are the total angular and total spinquantum numbers, respectively. The two-electron Hamiltoniancontaining Coulomb interaction and polarizationterms 1 is then diagonalized in the CI basis set. As a result,we get two-particle wave functions LS r 1 ,r 2 and energiesE 2S+1 L. We use as many single-particle basis functions nlmand as long a CI expansion as are needed to achieve convergenceand the required accuracy.Here we will not use the standard quantum-chemical definitionof correlation energy and correlation effects related todifferences between CI and Hartree-Fock variational procedures.Electronic correlation is understood in the presentpaper as the contribution of the excited configurations to theexact ground state 1 S g wave function in comparison to theground configuration 1s 2 . The quantification of this correlationcan be expressed, then, as c corr =1−c 1s 2 2 , where c 1s 2 isthe coefficient of the 1s 2 configuration in the CI expansion.From the wave functions we define the radial pair densityPr 1 ,r 2 ,PHYSICAL REVIEW B 74, 125322 2006Pr 1 ,r 2 =2 r 1 ,r 2 2 r 1 2 r 2 2 sin 1 sin 2 d 1 d 2 d 1 d 2 ,to study radial correlations, and the angular correlation densityZ,Z = N Z r max ,0,0,r max ,,0 2 ,with r max corresponding to the coordinates r 1 =r 2 of thePr 1 ,r 2 maximum and N Z to the appropriate normalizationfactor, to study angular correlations.The D − center will be characterized by its binding energyE b , which is defined asE b D − = E 0 + ED 0 − ED − .Here E 0 is the lowest energy of the Hamiltonian Eq. 2 withZ=0, i.e., the single-particle ground state energy of the undopedQD, and ED 0 and ED − are the single- and thetwo-particle ground state energies of the doped Z=1 QD,respectively.III. NUMERICAL RESULTSA. Quantum dot in air or a vacuumThis section is devoted to studying the effects of the polarizationof Coulomb interaction on the electronic correlationof a two-electron QD in the large dielectric mismatchregime i.e., in the presence of a large QD-surrounding dielectricmismatch leading to a transition from volume to surfacestates. To this end we consider a two-electron QD similarto the one studied in Ref. 29, defined by an R=5.35 nmradius, a V 0 =0.9 eV confining barrier and an m * =0.5 effectivemass. This QD is surrounded by air or a vacuum 0=m 0 * =1. The polarization of the Coulomb interaction is variedfrom zero QD =1 up to a maximum value achieved bya conductor QD, QD =. From a numerical point of view,no significant changes occur beyond QD =40–80, and welimit our study up to this range of QD permittivities.First of all, we should mention that, as expected, an increasein the dielectric mismatch is accompanied by an increasein radial localization. This is basically a singleparticleself-polarization effect. In our case, as the QDsurroundings consist of air or a vacuum 0 =1, the largerthe QD , the deeper the self-polarization well and, hence, thestronger the electron localization in this well. The transitionfrom volume to surface states takes place, in our case, at QD 4. This transition can be monitored very well by plottingthe radial density or the pair radial density Pr 1 ,r 2 vs QD . The corresponding figures, similar to Figs. 1 and 2 inRef. 29, have been omitted for the sake of conciseness.From now on, we should keep in mind that in our casethat is, QD 0 , the surface states are localized in a sphericalcrown beyond the QD border outside crown, i.e., theelectrons are mostly in a vacuum. Therefore, regardless ofthe QD permittivity, the electron-electron interaction containsan enhanced bare Coulomb term including a null567125322-3
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CONFINAMIENTO NANOSCÓPICO ENESTRUC
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AgradecimientosDecía Albert Einste
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A mi madreA la memoria de mi padre
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viiihigh-correlation electronic reg
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Capítulo 1Fundamentos teóricosEl
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Capítulo 5Confinamiento dieléctri
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Capítulo 6ConclusionesEn esta Tesi
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155entre los anillos como la orient
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157fuerte decaimiento de la intensi
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Publicaciones
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Confinamientos espacial y másico
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Confinamiento periódico 171J. Phys
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Confinamiento magnético
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Confinamiento magnético 195940QRs
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Confinamiento dieléctrico 199Compu
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- Page 315 and 316: Bibliografía[1] J. Karwowski,“In
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