CONFINAMIENTO NANOSC´OPICO EN ESTRUCTURAS ... - It works!

308 BIBLIOGRAFÍA[181] J. Planelles, J.I. Climente y F. Rajadell, “Quantum rings in tiltedmagnetic fields”, Physica E 33, 370 (2006).[182] M. Yamagiwa, N. Sumita, F. Minami y N. Koguchi, “Confined electronicstructure in GaAs quantum dots”, J. Lumin. 108, 379 (2004).[183] C.B. Murray, C.R. Kagan y M.G. Bawendi, “Synthesis and characterizationof monodisperse nanocrystals and close-packed nanocrystalassemblies”, Annual Review of Materials Science 30, 545 (2000).[184] W.C. Chan y S. Nie, “Quantum dot bioconjugates for ultrasensitivenonisotopic detection”, Science 281, 2016 (1998).[185] U. Woggon, Optical properties of semiconductor quantum dots, (Springer,Berlín, 1996).[186] L.E. Brus, “Electron-electron and electron-hole interactions in smallsemiconductor crystallites: The size dependence of the lowest excitedelectronic state”, J. Chem. Phys. 80, 4403 (1984).[187] G. Goldoni, F. Rossi y E. Molinari,“Strong exciton binding in quantumstructures through remote dielectric confinement”, Phys. Rev. Lett.80, 4995 (1998).[188] K.B. Kahen, J.P. Leburton, y K. Hess, “General model of the transversedielectric constant of GaAs-AlAs superlattices”, Superlatt. Microstruc.1, 289 (1985).[189] R. Tsu y L. Ioriatti, “Longitudinal dielectric constant for quantumwells”, Superlatt. Microstruc. 1, 295 (1985).[190] R. Tsu y D. Babić, “Doping of a quantum dot”, Appl. Phys. Lett. 64,1806 (1994).[191] Z.Y. Deng, J.K. Guo y T.R. Lai,“Impurity states in a spherical GaAs-Ga 1−x Al x As quantum dot: Effects of the spatial variation of dielectricscreening”, Phys. Rev. B 50, 5736 (1994).[192] L.W. Wang y A. Zunger, “Dielectric constants of silicon quantumdots”, Phys. Rev. Lett. 73, 1039 (1994).[193] M. Lannoo, C. Delerue y G. Allan, “Screening in semiconductor nanocrystallitesand its consequences for porous silicon”, Phys. Rev. Lett.74, 3415 (1995).