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CSEM Scientific and Technical Report 2008

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Polarization Imaging using Nanostructured Metal Grids<br />

M. Guillaumée, L. A. Dunbar, C. Santschi, E. Grenet, R. Eckert, R. P. Stanley<br />

Efficient wire grid polarizers have been designed, fabricated <strong>and</strong> characterized on CMOS photodetectors. Placing such polarizers on each pixel of a<br />

CMOS sensor allows the reconstruction of the polarization state, providing additional information on object properties being imaged.<br />

CMOS image sensors are found in many devices, from mobile<br />

phone cameras to high performance industrial sensors. They<br />

are sensitive across the visible, <strong>and</strong> color information can be<br />

extracted through filters on individual pixels. The integration of<br />

micro-polarizers on each individual pixel, in a configuration<br />

similar to the Bayer one (cf. Figure 1), allows the<br />

reconstruction of the polarization state [1] . Polarization imaging<br />

provides information such as shape <strong>and</strong> material properties.<br />

For example, polarization imaging can improve biomedical<br />

imaging contrast due to the birefringence of biological tissue [2] .<br />

In the present work, the integration of wire grid polarizers on<br />

pixels of CMOS photodetectors is achieved.<br />

Figure 1: The Bayer-like arrangement of micro-polarizers on the pixel<br />

array of an image sensor<br />

Metallic wire grids (see Figure 2) are well established as<br />

efficient polarizers (high transmission <strong>and</strong> high extinction ratio),<br />

providing high acceptance angle <strong>and</strong> broadb<strong>and</strong> polarization<br />

extinction ratio (ER). Wire grids are commonly used from<br />

radio-waves to the infrared. Their extension to the visible is<br />

challenging: to obtain both high transmission <strong>and</strong> ER in a wire<br />

grid polarizer, the pitch p of the grid (Figure 2) has to be much<br />

smaller than the incident wavelength λ (p < λ/10), i.e.<br />

p < 100 nm.<br />

Figure 2: A schematic of a wire grid polarizer on a glass substrate<br />

<strong>and</strong> definitions used for the grid dimensions<br />

It would be commercially interesting to fabricate these grids<br />

directly in the CMOS process. The period <strong>and</strong> slit width need<br />

to be compatible with typical CMOS dimensions while<br />

preserving efficient polarization properties. Suitable designs<br />

can be found by optimizing both the aperture width w <strong>and</strong> the<br />

film thickness h. An analytical model was used to underst<strong>and</strong><br />

the physics behind the transmission process of the polarizer.<br />

This model was used to optimize the design of the polarizer,<br />

which <strong>CSEM</strong> was able to demonstrate.<br />

As a first step, metallic gratings are on glass substrates. Good<br />

agreement with theory is observed [3] . A polarization extinction<br />

ratio of around 100 is measured from 600 nm to 900 nm with<br />

p = 500 nm, w = 150 nm <strong>and</strong> h = 285 nm. The gratings also<br />

show high transmission (>60%). Gold gratings with similar<br />

dimensions were fabricated <strong>and</strong> characterized on<br />

photodetectors. An extinction ratio higher than 200 is<br />

measured (cf. Figure 3), demonstrating the possibility to<br />

integrate efficient metallic gratings on CMOS detectors. The<br />

fringes observed in Figure 3 are due to a Fabry-Pérot effect<br />

due to the silicon oxide layer of several microns above the<br />

active region inherent to the CMOS fabrication process used<br />

for this device.<br />

Figure 3: Extinction ratio measured for a gold grating fabricated on a<br />

CMOS photodetector pixel (p = 500, h = 340 nm <strong>and</strong> w = 150 nm)<br />

This work demonstrates both theoretically <strong>and</strong> experimentally<br />

that it is possible to design efficient metallic grid polarizers<br />

within CMOS process constraints. An array of such polarizers<br />

placed above the pixel array of a CMOS camera would allow<br />

real time polarization imaging. These structures could also be<br />

used for other optical devices such as projection displays.<br />

This work was funded by the European Community, project no.<br />

IST-FP6- 034506 'PLEAS'.<br />

[1] G. P. Nordin, J. T. Meier, P. C. Deguzman, M. W. Jones,<br />

“Micropolarizer array for infrared imaging polarimetry”, J. Opt.<br />

Soc. Am. A, 16 (1999) 1168<br />

[2] S. Makita, Y. Yasuno, T. Endo, M. Itoh, T. Yatagai, “Polarization<br />

contrast imaging of biological tissues by polarization-sensitive<br />

Fourier-domain optical coherence tomography”, Appl. Opt., 45<br />

(2006) 1142<br />

[3] M. Guillaumée, L. A. Dunbar, C. Santschi, E. Grenet, R. Eckert,<br />

R. P. Stanley, “Polarization imaging on CMOS photodetector<br />

using nanostructured metallic grids”, Appl. Phys. Lett., submitted<br />

(2009)<br />

45

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