Edwin Jan Klein - Universiteit Twente

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Chapter 5 range of 0.9 to 1.1 µm. The 0.8 µm gaps are sometimes not fully opened while for gaps wider than 1.1 µm the coupling is normally too low. The addition of gap sizes beyond the useful range, however, makes the devices more resistant to variations (intentional or accidental) in the fabrication process. The columns that contain the groups are used to implement different types of devices. The outer four columns in the mask layout, for instance, contain MR-based reflectors while the inner twelve columns contain several different types of racetrack resonators. Also shown in the mask layout are the major and minor dice lines and the center alignment bar. In the mask layouts used for laterally coupled resonators the major dice lines are placed every 15 mm while the minor lines are spaced at 5 mm. The center alignment bar contains the alignment markers and several test structures. In Figure 5.5 a small section of this bar is shown. The structures in grey belong to the waveguide layer while the structures in black belong to an additional design layer used to define chromium heaters. Figure 5.5. Close-up of the alignment bar. This bar contains the alignment markers (left) and several test structures (right). As shown in Figure 5.5 each layer has its own set of test structures. These structures, shown in more detail in Figure 5.6, are used to monitor several aspects of the fabrication process such as the lithography and the etch process. The resonator gap test shown in Figure 5.7 for instance can instantly tell which resonator gaps (could) have been opened in the fabrication process. Figure 5.6. Test structure set with patterns to test the lithography and etching of straight waveguides, ring resonators and several other structures. 114 “closed” “open” Figure 5.7. Resonator gap test.
5.3. Fabrication and mask design of vertically coupled resonators defined using contact lithography 5.3.1 Fabrication 115 Fabrication The fabrication process used to build the first generation of vertically coupled resonators which is described here uses contact lithography to define the port waveguides and micro-ring resonators. Although the lithography for these devices is not as critical as that used for laterally coupled resonators, there are no small gaps between waveguides, this issue is replaced with the problem of correctly aligning the microring resonators to the port waveguides. This, combined with the fact that these devices consist of many more layers than devices based on laterally coupled resonators makes this process overall more complicated and time-consuming. Figure 5.8. Process flow with the major fabrication steps required to fabricate vertically coupled Si3N4 microring resonators. (Vertical I, using contact lithography)
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DENSELY INTEGRATED MICRORING- RESON
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DENSELY INTEGRATED MICRORING- RESON
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To my parents…
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esonators is limited by the spacing
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iv Samenvatting Dit proefschrift be
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schakelaar “aan” is, dan is de
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3.6.2 Overlap loss reduction.......
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Chapter 1 Introduction The devices
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1.2 Broadband to the home 3 Introdu
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1.3 Bringing Fiber to the Home 5 In
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Figure 1.5. The technological scope
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9 Introduction these basic paramete
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Chapter 2 2.1 Introduction Integrat
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Chapter 2 light Icav2 in the cavity
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Chapter 2 ∆ = ⎛ β r − β g
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Chapter 2 2.3.3 Combined model The
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Chapter 2 FC 4µ 1µ 2 ⋅ χr = 2
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Chapter 2 P Through /P In (dB) 0 -1
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Chapter 2 The figure shows that it
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Chapter 2 In − jϕr1 2 Figure 2.1
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Chapter 2 differences between the f
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Chapter 2 M = ⋅ FSR = N ⋅ FSR F
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Chapter 2 the heat will therefore f
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Chapter 2 index. Although this can
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Chapter 2 resonators for instance h
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Chapter 2 a rather complex MEMS bas
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Chapter 3 3.1 Introduction The most
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Chapter 3 3.2.1 Drop port on-resona
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Chapter 3 3.2.3 Filter bandwidth In
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Chapter 3 (resulting in a higher ba
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Chapter 3 Figure 3.11. Residual cha
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Chapter 3 3.3 Geometrical design ch
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Chapter 3 resonator and the port wa
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Chapter 3 Another important fact wh
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Chapter 3 The flowchart of the desi
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Chapter 3 While the resonator in th
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Chapter 3 3.6.1 Port waveguide and
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Chapter 3 overlap losses are only 0
Page 80 and 81: Chapter 3 3.7 Component design cons
Page 82 and 83: Chapter 3 By maximizing the power t
Page 84 and 85: Chapter 3 important, due to the fac
Page 86 and 87: Chapter 4 4.1 Introduction As was s
Page 88 and 89: Chapter 4 4.2.1 Transient response
Page 90 and 91: Chapter 4 Under the condition that
Page 92 and 93: Chapter 4 Figure 4.4. Screenshot of
Page 94 and 95: Chapter 4 The equations required to
Page 96 and 97: Chapter 4 using an approach based o
Page 98 and 99: Chapter 4 4.5.1 Architecture The Au
Page 100 and 101: Chapter 4 4.5.2 Simulation method A
Page 102 and 103: Chapter 4 Figure 4.9. A Primitive w
Page 104 and 105: Chapter 4 Listing 4.3. Pseudo code
Page 106 and 107: Chapter 4 Listing 4.4. Pseudo code
Page 108 and 109: Chapter 4 simulated output spectra
Page 110 and 111: Chapter 4 Figure 4.21. The reflecto
Page 112 and 113: Chapter 4 P Drop /P In (dB) 0 -10 -
Page 114 and 115: Chapter 4 Figure 4.27a. OADM with r
Page 116 and 117: Chapter 4 will propagate through th
Page 118 and 119: Chapter 4 As demonstrated by these
Page 120 and 121: Chapter 4 What is more interesting
Page 122 and 123: Chapter 4 method it does allow time
Page 124 and 125: Chapter 4 complex than the interact
Page 126 and 127: Chapter 5 5.1 Introduction The mate
Page 128 and 129: Chapter 5 wafer is used (step 1). T
Page 132 and 133: Chapter 5 The process flow with the
Page 134 and 135: Chapter 5 5.3.3 Mask layout The big
Page 136 and 137: Chapter 5 5.4. Fabrication and mask
Page 138 and 139: Chapter 5 1. Definition of the vert
Page 140 and 141: Chapter 5 5.4.2 Fabrication The fab
Page 142 and 143: Chapter 5 Figure 5.21. Process flow
Page 144 and 145: Chapter 5 removed using lift-off of
Page 146 and 147: Chapter 6 6.1 Introduction About ha
Page 148 and 149: Chapter 6 In early, comparatively s
Page 150 and 151: Chapter 6 that the TEOS has a very
Page 152 and 153: Chapter 6 The most important aspect
Page 154 and 155: Chapter 6 6.2.3 Chromium heater des
Page 156 and 157: Chapter 6 Therefore, even if the si
Page 158 and 159: Chapter 6 Next, the heater was heat
Page 160 and 161: Chapter 6 6.3 Characterization of s
Page 162 and 163: Chapter 6 polarization maintaining
Page 164 and 165: Chapter 6 the resonators in this gr
Page 166 and 167: Chapter 6 Although the fitted coupl
Page 168 and 169: Chapter 6 a cladding thickness of 3
Page 170 and 171: Chapter 6 6.4 A wavelength selectiv
Page 172 and 173: Chapter 6 A possible explanation fo
Page 175 and 176: Chapter 7 Densely integrated device
Page 177 and 178: Densely integrated devices for WDM-
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Densely integrated devices for WDM-
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7.2.2 Spectral measurements Densely
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Power Densely integrated devices fo
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7.3.4 Characterization Densely inte
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Figure 7.31a. Eye pattern of the re
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Chapter 8 8.1 Introduction In most
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Chapter 8 amount of power will be d
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Chapter 8 Another problem that may
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Chapter 8 halves that are each comp
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Chapter 9 Discussion and Conclusion
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Appendix A. Mason’s rule Several
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Appendix B. Crosstalk Derivation Th
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List of Acronyms ADSL - Asymmetric
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List of Symbols Q - Quality Factor
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Bibliography [1] Dan Schiller, “E
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Regions,” IEEE Photonics Technolo
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[66] B. E. Little, S. T. Chu, J. V.
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[97] H. Haeiwa, T. Naganawa and Y.
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[135] A. Driessen, D. H. Geuzebroek
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[165] T. Barwicz, M. R. Watts, M. A
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Publication List Patents (pending)
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R. Dekker, L.T.H.Hilderink, M.B.J.
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Networks (BB Photonics),” Interna
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Dankwoord/Acknowledgements Zo, dit
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Edwin Jan Klein - Universiteit Twente

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