Edwin Jan Klein - Universiteit Twente

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Chapter 7 matrix is 300 µm and the horizontal distance is 250 µm. These distances were required to be able to fit the wiring of all the electrodes. Also, having some distance between the resonators will reduce the thermal crosstalk between the resonators. Also indicated in the figure are the horizontal taper sections and the electrode bonding pads. From the bond pads gold on chromium wires extend to the chromium heaters on top of the resonators in the router matrix. Because many of the resonators in the matrix interact with each other it can be difficult to interpret initial measurement results. Additional test waveguides were therefore incorporated in the design to help determine the resonance frequencies of the individual micro-resonators in each column. 7.3.3 Improved OADM design The router design was to be fabricated in the new “Vertical II” fabrication process that used stepper lithography for the alignment and exposure of the resonator and port waveguides. Since not all of the image space on the reticle had been used for the router design the rest of the available image space was not only filled with several test structures but also with a new, slightly improved OADM design. This design, of which a schematic is shown in Figure 7.23, is largely identical to the OADM discussed in Section 6.2. In the new layout, however, the in- and output ports are placed on the same side of the OADM (compare, for instance, with fig.7.5). Therefore, if the OADM is only used as a de-multiplexer in a test-network situation, only one side requires pigtailing, saving considerable time in the fabrication process. By the wrapping around of this waveguide as shown in the figure it performs a dual function: it is both an in- and output as well as an alignment waveguide. A similar alignment waveguide is also present on the left side of this device. Vertical tapers were also for the first time implemented in this design. Align Add1 Add2 Add3 Add4 Align Figure 7.23. Re-designed OADM schematic 174 In Drop1 Drop2 Drop3 Drop4 Out
7.3.4 Characterization Densely integrated devices for WDM-PON The OADM and the router were both fabricated in the “Vertical II” fabrication process. However, due to a currently not yet fully understood interaction of the resist used for the stepper lithography (which is normally not used within MESA+) with the gasses used in the RIE etching process the etch rate of the nitride dropped dramatically. Regrettably this was not detected on time. As a result most waveguides were only etched to a depth of 70 nm. Therefore, in stead of having rib waveguides for the resonators only a ridge was etched in stead. This is clearly visible in Figure 7.24b where a cross-section is shown of coupling region between two resonators of the second order microring resonator filter in Figure 7.24a. Also visible in this figure is a thin slab of Si3N4 underneath the resonator waveguides This is the layer used for creating the port waveguides which normally would have been etched away completely in this location. 175 Si3N4 b) Figure 7.24. Top view a) and zoomed in cross-section of the coupling region of two microring resonators in a second order filter. The etching down of the resonator waveguides proved to be especially dramatic in the case of the resonator which should have been etched down 180 nm. Therefore, instead of a bend loss in the order of ≈10 dB/cm at 1550 nm, measurements performed on single (test) resonators showed a bend loss in excess of 400 dB/cm, which made these resonators unusable at this wavelength. At 1310 nm, however, the results were relatively good due to the significant decrease in bend loss at this shorter wavelength a)
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DENSELY INTEGRATED MICRORING- RESON
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DENSELY INTEGRATED MICRORING- RESON
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To my parents…
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esonators is limited by the spacing
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iv Samenvatting Dit proefschrift be
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schakelaar “aan” is, dan is de
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3.6.2 Overlap loss reduction.......
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Chapter 1 Introduction The devices
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1.2 Broadband to the home 3 Introdu
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1.3 Bringing Fiber to the Home 5 In
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Figure 1.5. The technological scope
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9 Introduction these basic paramete
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Chapter 2 2.1 Introduction Integrat
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Chapter 2 light Icav2 in the cavity
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Chapter 2 ∆ = ⎛ β r − β g
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Chapter 2 2.3.3 Combined model The
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Chapter 2 FC 4µ 1µ 2 ⋅ χr = 2
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Chapter 2 P Through /P In (dB) 0 -1
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Chapter 2 The figure shows that it
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Chapter 2 In − jϕr1 2 Figure 2.1
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Chapter 2 differences between the f
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Chapter 2 M = ⋅ FSR = N ⋅ FSR F
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Chapter 2 the heat will therefore f
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Chapter 2 index. Although this can
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Chapter 2 resonators for instance h
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Chapter 2 a rather complex MEMS bas
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Chapter 3 3.1 Introduction The most
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Chapter 3 3.2.1 Drop port on-resona
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Chapter 3 3.2.3 Filter bandwidth In
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Chapter 3 (resulting in a higher ba
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Chapter 3 Figure 3.11. Residual cha
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Chapter 3 3.3 Geometrical design ch
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Chapter 3 resonator and the port wa
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Chapter 3 Another important fact wh
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Chapter 3 The flowchart of the desi
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Chapter 3 While the resonator in th
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Chapter 3 3.6.1 Port waveguide and
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Chapter 3 overlap losses are only 0
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Chapter 3 3.7 Component design cons
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Chapter 3 By maximizing the power t
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Chapter 3 important, due to the fac
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Chapter 4 4.1 Introduction As was s
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Chapter 4 4.2.1 Transient response
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Chapter 4 Under the condition that
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Chapter 4 Figure 4.4. Screenshot of
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Chapter 4 The equations required to
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Chapter 4 using an approach based o
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Chapter 4 4.5.1 Architecture The Au
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Chapter 4 4.5.2 Simulation method A
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Chapter 4 Figure 4.9. A Primitive w
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Chapter 4 Listing 4.3. Pseudo code
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Chapter 4 Listing 4.4. Pseudo code
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Chapter 4 simulated output spectra
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Chapter 4 Figure 4.21. The reflecto
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Chapter 4 P Drop /P In (dB) 0 -10 -
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Chapter 4 Figure 4.27a. OADM with r
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Chapter 4 will propagate through th
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Chapter 4 As demonstrated by these
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Chapter 4 What is more interesting
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Chapter 4 method it does allow time
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Chapter 4 complex than the interact
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Chapter 5 5.1 Introduction The mate
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Chapter 5 wafer is used (step 1). T
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Chapter 5 range of 0.9 to 1.1 µm.
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Chapter 5 The process flow with the
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Chapter 5 5.3.3 Mask layout The big
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Chapter 5 5.4. Fabrication and mask
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Chapter 5 1. Definition of the vert
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Page 183 and 184: 7.2.2 Spectral measurements Densely
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Page 197: Densely integrated devices for WDM-
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Page 204 and 205: Chapter 8 Another problem that may
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Page 209 and 210: Chapter 9 Discussion and Conclusion
Page 211 and 212: Appendix A. Mason’s rule Several
Page 213 and 214: Appendix B. Crosstalk Derivation Th
Page 215 and 216: List of Acronyms ADSL - Asymmetric
Page 217 and 218: List of Symbols Q - Quality Factor
Page 219 and 220: Bibliography [1] Dan Schiller, “E
Page 221 and 222: Regions,” IEEE Photonics Technolo
Page 223 and 224: [66] B. E. Little, S. T. Chu, J. V.
Page 225 and 226: [97] H. Haeiwa, T. Naganawa and Y.
Page 227 and 228: [135] A. Driessen, D. H. Geuzebroek
Page 229 and 230: [165] T. Barwicz, M. R. Watts, M. A
Page 231 and 232: Publication List Patents (pending)
Page 233 and 234: R. Dekker, L.T.H.Hilderink, M.B.J.
Page 235 and 236: Networks (BB Photonics),” Interna
Page 237 and 238: Dankwoord/Acknowledgements Zo, dit
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Edwin Jan Klein - Universiteit Twente

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