Edwin Jan Klein - Universiteit Twente

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Chapter 6 A possible explanation for the considerable bend losses might be sought in a resonator waveguide that either has a lot of roughness or has been fabricated too thin. More likely, however, these losses are due to the “lifting” of the resonator in the coupling region as is shown in Figure 3.36 for a different resonator. Here the required modal adjustment can cause significant losses. Dropped power (dB) a) b) Figure 6.35. Microscope image of a realized switch a) and the “on” and “off” responses b) measured for this device. 156 0 -5 -10 -15 -20 -25 -30 -35 1548 1549 1550 1551 1552 1553 Wavelength (nm) Figure 6.36. The lifting of the resonator in the coupling region due to the waveguide underneath. This lifting can increase the losses considerably. 6.4.3 Vernier switch “Lifted” resonator Port waveguide One of the problems of the presented switch is that the 12 dB “on/off” attenuation is too low for practical applications. As shown in Figure 6.34, however, nothing can be done about this for the given configuration. The only possible solutions are then to decrease the radius, which is not possible for this resonator, or go to higher order filters [53-68]. Another problem is that the free spectral range of 4.2 nm of the switch
157 Microring-resonator building blocks is also limited. By introducing the Vernier effect as was discussed in Chapter 2.7, however, the FSR can be increased significantly. In order to test this, a switch-like device was fabricated with two different resonators. The resonators in this device, which is shown in Figure 6.37a have a radius of 46 µm and 55 µm. This corresponds to a FSR of 4.66 and 4 nm respectively. The combined FSR, which can be calculated using Equation (2.36) is therefore ≈28 µm. The measurement of the drop response of this Vernier switch shows that this FSR was indeed obtained. Although this Vernier resonator is clearly not state-of-the-art it clearly demonstrates the problem of the side- lobes that typically occurs for Vernier-type devices. These side-lobes that are typically close to the main resonance peak can significantly interfere with device operation if, for instance, adjacent channels of a certain wavelength band are also dropped to a certain extent. a) Dropped power (a.u.) 1.0 0.8 0.6 0.4 0.2 0.0 FSR = 28 nm side lobes 1520 1525 1530 1535 1540 1545 1550 1555 1560 Wavelength Figure 6.37. Realized Vernier resonator comprised of two microring resonators with a radius of 46 and 55 µm. The drop measured response b) has a FSR of 28 nm. b)
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DENSELY INTEGRATED MICRORING- RESON
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DENSELY INTEGRATED MICRORING- RESON
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To my parents…
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esonators is limited by the spacing
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iv Samenvatting Dit proefschrift be
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schakelaar “aan” is, dan is de
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3.6.2 Overlap loss reduction.......
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Chapter 1 Introduction The devices
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1.2 Broadband to the home 3 Introdu
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1.3 Bringing Fiber to the Home 5 In
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Figure 1.5. The technological scope
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9 Introduction these basic paramete
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Chapter 2 2.1 Introduction Integrat
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Chapter 2 light Icav2 in the cavity
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Chapter 2 ∆ = ⎛ β r − β g
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Chapter 2 2.3.3 Combined model The
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Chapter 2 FC 4µ 1µ 2 ⋅ χr = 2
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Chapter 2 P Through /P In (dB) 0 -1
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Chapter 2 The figure shows that it
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Chapter 2 In − jϕr1 2 Figure 2.1
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Chapter 2 differences between the f
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Chapter 2 M = ⋅ FSR = N ⋅ FSR F
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Chapter 2 the heat will therefore f
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Chapter 2 index. Although this can
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Chapter 2 resonators for instance h
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Chapter 2 a rather complex MEMS bas
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Chapter 3 3.1 Introduction The most
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Chapter 3 3.2.1 Drop port on-resona
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Chapter 3 3.2.3 Filter bandwidth In
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Chapter 3 (resulting in a higher ba
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Chapter 3 Figure 3.11. Residual cha
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Chapter 3 3.3 Geometrical design ch
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Chapter 3 resonator and the port wa
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Chapter 3 Another important fact wh
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Chapter 3 The flowchart of the desi
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Chapter 3 While the resonator in th
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Chapter 3 3.6.1 Port waveguide and
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Chapter 3 overlap losses are only 0
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Chapter 3 3.7 Component design cons
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Chapter 3 By maximizing the power t
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Chapter 3 important, due to the fac
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Chapter 4 4.1 Introduction As was s
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Chapter 4 4.2.1 Transient response
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Chapter 4 Under the condition that
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Chapter 4 Figure 4.4. Screenshot of
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Chapter 4 The equations required to
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Chapter 4 using an approach based o
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Chapter 4 4.5.1 Architecture The Au
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Chapter 4 4.5.2 Simulation method A
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Chapter 4 Figure 4.9. A Primitive w
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Chapter 4 Listing 4.3. Pseudo code
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Chapter 4 Listing 4.4. Pseudo code
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Chapter 4 simulated output spectra
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Chapter 4 Figure 4.21. The reflecto
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Chapter 4 P Drop /P In (dB) 0 -10 -
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Chapter 4 Figure 4.27a. OADM with r
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Chapter 4 will propagate through th
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Chapter 4 As demonstrated by these
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Chapter 4 What is more interesting
Page 122 and 123: Chapter 4 method it does allow time
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Page 126 and 127: Chapter 5 5.1 Introduction The mate
Page 128 and 129: Chapter 5 wafer is used (step 1). T
Page 130 and 131: Chapter 5 range of 0.9 to 1.1 µm.
Page 132 and 133: Chapter 5 The process flow with the
Page 134 and 135: Chapter 5 5.3.3 Mask layout The big
Page 136 and 137: Chapter 5 5.4. Fabrication and mask
Page 138 and 139: Chapter 5 1. Definition of the vert
Page 140 and 141: Chapter 5 5.4.2 Fabrication The fab
Page 142 and 143: Chapter 5 Figure 5.21. Process flow
Page 144 and 145: Chapter 5 removed using lift-off of
Page 146 and 147: Chapter 6 6.1 Introduction About ha
Page 148 and 149: Chapter 6 In early, comparatively s
Page 150 and 151: Chapter 6 that the TEOS has a very
Page 152 and 153: Chapter 6 The most important aspect
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Page 156 and 157: Chapter 6 Therefore, even if the si
Page 158 and 159: Chapter 6 Next, the heater was heat
Page 160 and 161: Chapter 6 6.3 Characterization of s
Page 162 and 163: Chapter 6 polarization maintaining
Page 164 and 165: Chapter 6 the resonators in this gr
Page 166 and 167: Chapter 6 Although the fitted coupl
Page 168 and 169: Chapter 6 a cladding thickness of 3
Page 170 and 171: Chapter 6 6.4 A wavelength selectiv
Page 175 and 176: Chapter 7 Densely integrated device
Page 177 and 178: Densely integrated devices for WDM-
Page 183 and 184: 7.2.2 Spectral measurements Densely
Page 189 and 190: Power Densely integrated devices fo
Page 191 and 192: 7.3.4 Characterization Densely inte
Page 195 and 196: Figure 7.31a. Eye pattern of the re
Page 197: Densely integrated devices for WDM-
Page 200 and 201: Chapter 8 8.1 Introduction In most
Page 202 and 203: Chapter 8 amount of power will be d
Page 204 and 205: Chapter 8 Another problem that may
Page 206 and 207: Chapter 8 halves that are each comp
Page 209 and 210: Chapter 9 Discussion and Conclusion
Page 211 and 212: Appendix A. Mason’s rule Several
Page 213 and 214: Appendix B. Crosstalk Derivation Th
Page 215 and 216: List of Acronyms ADSL - Asymmetric
Page 217 and 218: List of Symbols Q - Quality Factor
Page 219 and 220: Bibliography [1] Dan Schiller, “E
Page 221 and 222: Regions,” IEEE Photonics Technolo
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[66] B. E. Little, S. T. Chu, J. V.
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[97] H. Haeiwa, T. Naganawa and Y.
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[135] A. Driessen, D. H. Geuzebroek
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[165] T. Barwicz, M. R. Watts, M. A
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Publication List Patents (pending)
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R. Dekker, L.T.H.Hilderink, M.B.J.
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Networks (BB Photonics),” Interna
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Dankwoord/Acknowledgements Zo, dit
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Edwin Jan Klein - Universiteit Twente

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