NASA Scientific and Technical Aerospace Reports

3C, 3E, KALPANA-I, GSAT-2&3. In this paper, various ways and approaches to achieve this kind of a software system have
been explored and presented.
Author
Ground Operational Support System; Computer Programs; Low Earth Orbits; Satellite Orbits
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CHEMISTRY AND MATERIALS (GENERAL)
Includes general research topics related to the composition, properties, structure, and use of chemical compounds and materials as they
relate to aircraft, launch vehicles, and spacecraft. For specific topics in chemistry and materials see categories 25 through 29. For
astrochemistry see category 90 Astrophysics.
20060002199 National Renewable Energy Lab., Golden, CO USA
XPS and UPS Investigation of NH4OH-Exposed Cu(In,Ga)Se2 Thin Films
Perkins, C. L.; Hasoon, F. S.; Al-Thani, H. A.; Asher, S. E.; Sheldon, P.; Feb. 2005; 12 pp.; In English
Report No.(s): DE2005-15016463; NREL/CP-520-37419; No Copyright; Avail.: Department of Energy Information Bridge
Photoelectron spectroscopy was used to determine the compositional and electronic changes occurring in Cu(In,Ga)Se2
thin films as a result of immersion in aqueous ammonia solution. We find that NH4OH-treated CIGS surfaces are preferentially
etched of indium and gallium, resulting in the formation of a thin layer of a degenerate Cu-Se compound that we tentatively
identify as Cu(sub 2)Se. The work function of ammonia-treated samples is found to increase by 0.6 eV relative to as-grown
CIGS thin films. The uniformity of chemical bath effects (etching & deposition) was found to be improved by the addition
to the bath of a non-ionic surfactant. Initial device results show that the new surfactant-based chemical bath deposition (CBD)
method may lead to better and thinner CdS buffer layers.
NTIS
Ammonia; Photoelectron Spectroscopy; Thin Films; X Ray Spectroscopy
20060002207 National Renewable Energy Lab., Golden, CO USA
a-SiGe:H Materials and Devices Deposited by Hot Wire CVD Using a Tantalum Filament Operated at Low
Temperature
Mahan, A. H.; Xu, Y.; Gedvilas, L. M.; Reedy, R. C.; Branz, H. M.; Feb. 2005; 12 pp.; In English
Report No.(s): DE2005-15016498; NREL/CP-520-37475; No Copyright; Avail.: National Technical Information Service
(NTIS)
We report the deposition of improved hydrogenated amorphous silicon germanium (a-SiGe:H) films by the hot wire CVD
(HWCVD) technique using a tantalum filament operating at a low temperature. We gauge the material quality of the a-SiGe:H
films by comparing infrared, small angle X-ray scattering (SAXS), photocapacitance, and conductivity measurements to
earlier results, and fabricate single-junction n-i-p solar cell devices using these i-layers.
NTIS
Deposition; Low Temperature; Tantalum; Vapor Deposition; Vapors; Wire
20060002219 Idaho National Engineering Lab., Idaho Falls, ID, USA, Khlopin Radium Inst., Saint Petersburg, Russia,
Academy of Sciences (USSR), Novosibirsk, USSR
Fundamental UNEX Chemistry
Herbst, R. S.; Peterman, D. R.; Luther, T. A.; Garn, T. G.; Jan. 2005; 22 pp.; In English
Report No.(s): DE2005-841393; No Copyright; Avail.: National Technical Information Service (NTIS)
This presentation was given at the DOE Office of Science-Environmental Management Science Program (EMSP)
High-Level Waste Workshop held on January 19-20, 2005 at the Savannah River Site.
NTIS
Environment Management; Management Methods
20060002227 California Univ., Lawrence Berkeley National Lab., Berkeley, CA, USA
Technetium Chemistry in Waste Environments
Jan. 20, 2005; 20 pp.; In English
Report No.(s): DE2005-841418; No Copyright; Avail.: National Technical Information Service (NTIS)
This presentation was given at the DOE Office of Science-Environmental Management Science Program (EMSP)
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