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Callister - An introduction - 8th edition

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Summary • 773<br />

One common use for semiconducting materials is in integrated-circuit components.<br />

In our discussion of rectifying junctions and transistors, two of these components,<br />

we detailed their electrical characteristics and mechanics of operation, per<br />

the diagram that follows.<br />

Silicon<br />

Semiconductors<br />

(Performance)<br />

p–n rectifying junctions<br />

(electrical characteristics,<br />

mechanics of operation)<br />

Transistors—junction, MOSFET<br />

(electrical characteristics,<br />

mechanics of operation)<br />

Integrated circuits<br />

This concludes our processing/structure/properties/performance commentary for<br />

silicon semiconductors. For the most part, the individual components found in the preceding<br />

interrelationships are conceptual in nature—that is, they represent the scientific<br />

(as opposed to engineering) aspects of materials. We have also generated a processing/structure/properties/performance<br />

relational diagram (for these materials) taken<br />

from the materials engineering perspective, which is presented in Figure 18.37.<br />

Processing Structure Properties Performance<br />

Growth of single<br />

crystals<br />

Photolithography<br />

Impurity<br />

doping<br />

Interconnect<br />

wiring<br />

Extrinsic band<br />

structure<br />

Conductivity<br />

type (n or p)<br />

Electrical<br />

conductivity<br />

Integrated<br />

circuit<br />

Figure 18.37 Schematic diagram that summarizes the elements of processing, structure,<br />

properties, and performance for silicon semiconductors, which includes components of<br />

materials engineering.<br />

Important Terms and Concepts<br />

acceptor state (level)<br />

capacitance<br />

conduction band<br />

conductivity, electrical<br />

dielectric<br />

dielectric constant<br />

dielectric displacement<br />

dielectric strength<br />

diode<br />

dipole, electric<br />

donor state (level)<br />

doping<br />

electron energy band<br />

energy band gap<br />

extrinsic semiconductor<br />

Fermi energy<br />

ferroelectric<br />

forward bias<br />

free electron<br />

Hall effect<br />

hole<br />

insulator<br />

integrated circuit<br />

intrinsic semiconductor<br />

ionic conduction<br />

junction transistor<br />

Matthiessen’s rule<br />

metal<br />

mobility<br />

MOSFET<br />

Ohm’s law<br />

permittivity<br />

piezoelectric<br />

polarization<br />

polarization, electronic<br />

polarization, ionic<br />

polarization, orientation<br />

rectifying junction<br />

relaxation frequency<br />

resistivity, electrical<br />

reverse bias<br />

semiconductor<br />

valence band

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