Callister - An introduction - 8th edition

single crystal, 451
structure of, 451
Quenching media, 430–431
R
Radiation effects, polymers, 709
Random copolymers, 551, 552, G10
Range of stress, 255
Recombination, electron-hole,
748–749, 851
in light-emitting diodes, 856
Recovery, 219, G10
Recrystallization, 219–222, 423, G10
effect on properties, 221
kinetics for copper, 355
Recrystallization temperature, 219,
222, G10
dependence on alloy content,
219–220
dependence on percent cold work,
222
selected metals and alloys, 222
Rectification, 748–750
Rectifying junctions, 748–750, G10
Recycling:
issues in materials science and
engineering, 878–881
of beverage cans, 872
of composite materials, 880–881
of glass, 879
of metals, 878–879
of plastics and rubber, 879–880
Recycling codes and products, 880
Reduction (electrochemical),
675, G10
Reduction in area, percent, 166
Reflection, 848, G10
Reflectivity, 844, 848
Refraction, 846–847, G10
index of, 846, G6
Refractories (ceramics), 503,
505–507, G10
corrosion, 707
Refractory metals, 412–414
Reinforced concrete, 633–634, G10
Reinforcement efficiency, table of, 644
Relative permeability, 804, 805, G10
Relative permittivity, see
Dielectric constant
Relaxation frequency, 764, G10
Relaxation modulus, 575–577, G10
Relaxation time, 621
Remanence (remanent induction),
816, G10
Repeated stress cycle, 255, 256
Repeat units, 536
bifunctional and trifunctional, 540
table of, 539–540, A36–A39
Residual stresses, 423, G10. See also
Thermal stresses
glass, 516
martensitic steels, 375
Resilience, 168–169, G10
Resin, polymer, 647
Resistance (electrical), 721
Resistivity, see Electrical
resistivity
Resolved shear stresses, 205, G10
Retained austenite, 363
Reverse bias, 748, G10
Reversed stress cycle, 256
Rhodium, 415
Rhombohedral crystal system,
52, 54
Rochelle salt, 766
Rock salt structure, 457, 460
Rockwell hardness tests, 174–176
Rolling, of metals, 418, G10
Rouge, 508
Rovings, 658
Rubbers, 545, 552
natural, see Natural rubber
(polyisoprene)
synthetic, 552, 599–601
trade names, characteristics, and
applications, 600
Rubbery region, polymers, 576
Ruby, see also Aluminum oxide
lasers, 858–860
optical characteristics, 853
Rule of mixtures, G11
composites, 630, 638, 641, 642,
643, 652
electrical resistivity, 730
Rupture, 266, G11
Rupture lifetime, 266
extrapolation of, 268–269
Rust, 673, 677
Ruthenium, 415
S
Sacrificial anodes, 702, G11
Safe stress, 183, G11
Safety factors, 183, 248
Samarium-cobalt magnets, 824
Sand casting, 419
Sandwich panels, 661–662, G11
Sapphire, see also Aluminum oxide
optical transmittance, 853
Saturated hydrocarbons, 534, G11
Saturation, extrinsic semiconductors,
741
Saturation magnetization, 807, 812,
816, G11
temperature dependence, 814
SBR, see Styrene-butadiene rubber
Index • I17
Scaling, 703
Scanning electron microscopy,
111, G11
Scanning probe microscopy, 12,
111–112, G11
Scanning tunneling microscope, 471
Schmid factor, 230
Schottky defect, 472, 473, 476, G11
equilibrium number, 474
Scission, 709, G11
Scleroscope hardness, 178
Screw dislocations, 99, 100, 101, 1
99, 200, G11. See also
Dislocations
in polymers, 558, 559
Seawater, as corrosion environment,
701
Secant modulus, 157, 158
Secondary bonds, 34–36, G11
Secondary creep, 266
Segregation, 297
Selective leaching, 697–698, G11
Self-diffusion, 125, G11
Self-interstitials, 93, G11
SEM, see Scanning electron
microscopy
Semiconductor devices, 748–754
Semiconductor lasers, 860–862
Semiconductors:
band structure, 724, 725
carbon nanotubes as, 471
in computers, 752–753
costs, A34
defined, 11, 722, G11
diffusion in, 137–140
extrinsic, 736–739, G4
fullerenes as, 470
intrinsic, 733–736, G6
intrinsic carrier concentration,
734, 740
light absorption, 849–852
n-type, 736–738, G8
p-type, 738–739, G10
temperature dependence:
electron concentration, n-type
Si, 741
electron mobility, Si, 743
hole mobility, Si, 743
intrinsic carrier concentration of
Ge, 740
intrinsic carrier concentration of
Si, 740
Semicrystalline polymers, 554
deformation mechanisms:
elastic, 582, 583
plastic, 582, 584
Sensors, 11–12
Severity of quench, 430