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Callister - An introduction - 8th edition

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I6 • Index<br />

Electrical wires, aluminum and<br />

copper, 731–732<br />

Electric dipole moment, 759<br />

Electric dipoles, see Dipoles<br />

Electric field, 722, 727, G4<br />

Electrochemical cells, 677–678<br />

Electrochemical reactions, 675–682<br />

Electrodeposition, 677<br />

Electrode potentials, 677–678<br />

values of, 679<br />

Electroluminescence, 856, G4<br />

Electrolytes, 678, G4<br />

Electromagnetic radiation, 841–843<br />

interactions with atoms/electrons,<br />

843–844<br />

Electromagnetic spectrum, 841–842<br />

Electron band structure, see<br />

Energy bands<br />

Electron cloud, 22, 33<br />

Electron configurations, 24–26, G4<br />

elements, 25<br />

periodic table and, 26<br />

stable, 25<br />

Electronegativity, 26–27, 33, G4<br />

influence on solid solubility, 95<br />

values for the elements, 27<br />

Electroneutrality, 472, G4<br />

Electron gas, 725<br />

Electronic conduction, 722, 755<br />

Electronic polarization, 512,<br />

762–763, 844, 849, G9<br />

Electron microscopy, 109–111<br />

Electron mobility, 727<br />

influence of dopant content on,<br />

742, 743<br />

influence of temperature on,<br />

742, 743<br />

selected semiconductors, 734<br />

Electron orbitals, 21<br />

Electron probability distribution, 22<br />

Electrons, 19–20<br />

conduction process, 735, 748–749<br />

role, diffusion in ionic<br />

materials, 476<br />

energy bands, see Energy bands<br />

energy levels, 21–24<br />

free, see Free electrons<br />

scattering, 727, 783<br />

in semiconductors, 734–739<br />

temperature variation of<br />

concentration, 740–741<br />

spin, 23, 805<br />

valence, 25<br />

Electron states, G4<br />

Electron transitions, 844–845<br />

metals, 845–846<br />

nonmetals, 849–852<br />

Electron volt, 31, G4<br />

Electropositivity, 26, G4<br />

Electrorheological fluids, 12<br />

Elongation, percent, 166<br />

selected materials, A11–A15<br />

selected metals, 168<br />

selected polymers, 572<br />

Embrittlement:<br />

hydrogen, 699–700<br />

temper, 377<br />

Embryo, phase particle, 346<br />

Emf series, 678–680<br />

Emitter, 750–751<br />

Endurance limit, 257. See also<br />

Fatigue limit<br />

Energy:<br />

activation, see Activation energy<br />

bonding, 29, 31, G1<br />

current concerns about, 13–14, 876<br />

free, 285, 345–349, G5<br />

grain boundary, 103<br />

photon, 843<br />

surface, 102<br />

vacancy formation, 92<br />

Energy band gap, see Band gap<br />

Energy bands, 722–725<br />

structures for metals, insulators,<br />

and semiconductors, 724<br />

Energy levels (states), 21–24,<br />

723–724<br />

Energy and materials, 877<br />

Energy product, magnetic, 822–823<br />

Engineering stress/strain, 154, G12<br />

Entropy, 285, 345, 588<br />

Environmental considerations and<br />

materials, 875–883<br />

Epoxies:<br />

degradation resistance, 708<br />

polymer-matrix composites, 650<br />

repeat unit structure, A36<br />

trade names, characteristics,<br />

applications, 598<br />

Equilibrium:<br />

definition of, 285<br />

phase, 285, G4<br />

Equilibrium diagrams, see Phase<br />

diagrams<br />

Erosion-corrosion, 698, G4<br />

Error bars, 181<br />

Error function, Gaussian, 129<br />

Etching, 108, 109<br />

Ethane, 535<br />

Ethers, 536<br />

Ethylene, 534<br />

polymerization, 537<br />

Ethylene glycol (structure), 609<br />

Euro coins, alloys used for, 416<br />

Eutectic isotherm, 299<br />

Eutectic phase, 308, G4<br />

Eutectic reactions, 299, 307, G4<br />

iron-iron carbide system, 321<br />

Eutectic structure, 307, G4<br />

Eutectic systems:<br />

binary, 298–311<br />

microstructure development,<br />

305–311<br />

Eutectoid, shift of position, 330<br />

Eutectoid ferrite, 325<br />

Eutectoid reactions, 314, G4<br />

iron-iron carbide system, 321<br />

kinetics, 357–358<br />

Eutectoid steel, microstructure<br />

changes/development, 322–324<br />

Exchange current density, 685<br />

Excited states, 844, G4<br />

Exhaustion, in extrinsic<br />

semiconductors, 741<br />

Expansion, thermal, see Thermal<br />

expansion<br />

Extrinsic semiconductors, 736–739, G4<br />

electron concentration vs.<br />

temperature, 741<br />

exhaustion, 741<br />

saturation, 741<br />

Extrusion, G4<br />

clay products, 519<br />

metals, 418–419<br />

polymers, 613–614<br />

F<br />

Fabrication:<br />

ceramics, 513<br />

clay products, 518–523<br />

fiber-reinforced composites,<br />

657–660<br />

metals, 417–422<br />

Face-centered cubic structure,<br />

47–48, G4<br />

anion stacking (ceramics), 460–461<br />

Burgers vector for, 204<br />

close packed planes (metals),<br />

69–71<br />

slip systems, 203<br />

Factor of safety, 183, 248<br />

Failure, mechanical, see Creep;<br />

Fatigue; Fracture<br />

Faraday constant, 680<br />

Fatigue, 255–265, G4<br />

corrosion, 264<br />

crack initiation and propagation,<br />

259–261<br />

cyclic stresses, 255–256<br />

environmental effects, 264–265<br />

low- and high-cycle, 259<br />

polymers, 580, 581<br />

probability curves, 258–259<br />

thermal, 264

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